s BSZ900N15NS3 G OptiMOSTM3 Power-Transistor Product Summary Package V 150 V DS Marking R 90 mΩ DS(on),max • N-channel, normal level I 13 A D • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) PG-TSDSON-8 • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type Package Marking BSZ900N15NS3 G PG-TSDSON-8 900N15N Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 °C 13 A D C T =100 °C 8 C Pulsed drain current2) ID,pulse TC=25 °C 52 Avalanche energy, single pulse E I =10 A, R =25 Ω 30 mJ AS D GS Gate source voltage V ±20 V GS Power dissipation P T =25 °C 38 W tot C Operating and storage temperature T, T -55 ... 150 °C j stg IEC climatic category; DIN IEC 68-1 55/150/56 1)J-STD20 and JESD22 Rev. 2.1 page 1 2011-05-16

BSZ900N15NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 3.3 K/W thJC Thermal resistance, junction - ambient RthJA 6 cm2 cooling area3) - - 60 Electrical characteristics, at T=25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 150 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =20 µA 2 3 4 GS(th) DS GS D V =120 V, V =0 V, Zero gate voltage drain current I DS GS - 0.01 1 µA DSS T=25 °C j V =120 V, V =0 V, DS GS - 10 100 T=125 °C j Gate-source leakage current I V =20 V, V =0 V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =10 A - 74 90 mΩ DS(on) GS D V =8 V, I =5 A - 75 91 GS D Gate resistance R - 1.7 - Ω G |V |>2|I |R , Transconductance g DS D DS(on)max 6 12 - S fs I =10 A D 3) see figure 3 Rev. 2.1 page 2 2011-05-16

BSZ900N15NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 380 510 pF iss V =0 V, V =75 V, Output capacitance C GS DS - 46 61 oss f=1 MHz Reverse transfer capacitance C - 3 - rss Turn-on delay time t - 4 - ns d(on) Rise time tr V =75 V, V =10 V, - 4 - DD GS I =5 A, R =1.6 Ω Turn-off delay time t D G - 8 - d(off) Fall time t - 3 - f Gate Charge Characteristics4) Gate to source charge Q - 1.9 - nC gs Gate to drain charge Q - 0.9 - gd V =75 V, I =5 A, Switching charge Q DD D - 1.7 - sw V =0 to 10 V GS Gate charge total Q - 5.0 7 g Gate plateau voltage V - 5.2 - V plateau Output charge Q V =75 V, V =0 V - 12 17 nC oss DD GS Reverse Diode Diode continous forward current I - - 13 A S T =25 °C C Diode pulse current I - - 52 S,pulse V =0 V, I =13 A, Diode forward voltage V GS F - 0.9 1.2 V SD T=25 °C j Reverse recovery time trr V =75 V, I =5 A, - 59 ns R F di /dt=100 A/µs Reverse recovery charge Q F - 123 - nC rr 4) See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2011-05-16

BSZ900N15NS3 G 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥10 V tot C D C GS 40 15 35 30 10 25 [W]tot 20 [A]D P I 15 5 10 5 0 0 0 40 80 120 160 0 40 80 120 160 TC [°C] T [°C] C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS C thJC p parameter: t parameter: D=t /T p p 102 101 1 µs 10 µs 101 100 µs 0.5 W] A] 1 ms K/ [D [C 100 0.2 I hJ t Z DC 0.1 100 0.05 0.02 0.01 single pulse 10-1 10-1 10-1 100 101 102 103 V [V] t [s] DS p Rev. 2.1 page 4 2011-05-16

BSZ900N15NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T=25 °C R =f(I ); T=25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 30 150 140 130 5 V 5.5 V 25 10 V 120 6 V 110 20 7 V 100 ] 90 Ω 8 V m [A]D 15 [on) 7800 10 V I 6 V S( D R 60 10 50 40 5.5 V 30 5 20 5 V 10 4.5 V 0 0 0 1 2 3 0 4 8 12 16 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T=25 °C D GS DS D DS(on)max fs D j parameter: T j 28 20 24 15 20 16 A] S] I [D g [fs 10 12 8 5 4 150 °C 25 °C 0 0 0 2 4 6 8 0 10 20 30 V [V] I [A] GS D Rev. 2.1 page 5 2011-05-16

BSZ900N15NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T); I =10 A; V =10 V V =f(T); V =V DS(on) j D GS GS(th) j GS DS parameter: I D 200 4 180 3.5 160 200 µA 3 140 20 µA 2.5 ]Ω 120 m 98 % V] R [DS(on) 10800 typ V [GS(th) 2 1.5 60 1 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 103 100 Ciss 102 25 °C Coss 150 °C, 98% C [pF] I [A]F 10 150 °C 101 25 °C, 98% Crss 100 1 0 20 40 60 80 100 0 0.5 1 1.5 2 V [V] V [V] DS SD Rev. 2.1 page 6 2011-05-16

BSZ900N15NS3 G 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 Ω V =f(Q ); I =5 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 10 120 V 8 75 V 30 V 6 A] V] [AS 10 [GS I V 4 25 °C 100 °C 2 125 °C 1 0 1 10 100 1000 0 2 4 6 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T); I =1 mA BR(DSS) j D 170 V GS 165 Qg 160 V] 155 [S) S D R( B 150 V V gs(th) 145 140 Qg(th) Qsw Qgate Q Q 135 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev. 2.1 page 7 2011-05-16

BSZ900N15NS3 G Package Outline: PG-TSDSON-8 Rev. 2.1 page 8 2011-05-16

BSZ900N15NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.1 page 9 2011-05-16

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