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B S V 5 2 BSV52 C E SOT-23 B Mark: B2 NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 12 V CEO V Collector-Base Voltage 20 V CES V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BSV52 P Total Device Dissipation 225 mW D Derate above 25°C 1.8 mW/°C RθJA Thermal Resistance, Junction to Ambient 556 °C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation

B NPN Switching Transistor S (continued) V 5 2 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage I = 10 mA, I = 0 12 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 µA, I = 0 20 V (BR)CES C E V Emitter-Base Breakdown Voltage I = 100 µA, I = 0 5.0 V (BR)EBO E C I Collector-Cutoff Current V = 10 V, I = 0 100 nA CBO CB E V = 10 V, I = 0, T = 125°C 5.0 µA CB E A ON CHARACTERISTICS h DC Current Gain I = 1.0 mA, V = 1.0 V 25 FE C CE I = 10 mA, V = 1.0 V 40 120 C CE I = 50 mA, V = 1.0 V 25 C CE VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.3 mA 0.3 V I = 10 mA, I = 1.0 mA 0.25 V C B I = 50 mA, I = 5.0 mA 0.4 V C B VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.7 0.85 V I = 50 mA, I = 5.0 mA 1.2 V C B SMALL SIGNAL CHARACTERISTICS fT Transition Frequency IC = 10 mA, VCE = 10 V, 400 MHz f = 100 MHz Ccb Collector-Base Capacitance IE = 0, VCB = 5.0 V, f = 1.0 MHz 4.0 pF Ceb Emitter-Base Capacitance IC = 0, VEB = 1.0 V, f = 1.0 MHz 4.5 pF 3 SWITCHING CHARACTERISTICS ts Storage Time IB1 = IB2 = IC = 10 mA 13 ns ton Turn-On Time VCC = 3.0 V, IC = 10 mA, 12 ns I = 3.0 mA B1 toff Turn-Off Time VCC = 3.0 V, IC = 10 mA, 18 ns I = 3.0 mA, I = 1.5 mA B1 B2 Spice Model NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2 Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p Itf=.3 Vtf=4 Xtf=4 Rb=10)

B NPN Switching Transistor S (continued) V 5 2 Typical Characteristics DC Current Gain Collector-Emitter Saturation vs Collector Current E (V) Voltage vs Collector Current 200 G0.5 AIN VC E = 1.0V VOLTA0.4 β = 10 T G150 ER N T RE 125 °C MIT0.3 C CUR100 25 °C TOR-E0.2 25 °C 125 °C D C h - FE 50 - 40 °C COLLE0.1 - 40 °C 0.01 I C -0 .C1OLLECTOR1 CURRENT 1 (0mA) 100 V - CESAT 00.1 I C - C1OLLECTOR 1C0URRENT (m1A0)0 500 Base-Emitter Saturation Base-Emitter ON Voltage vs Voltage vs Collector Current V) Collector Current VOLTAGE (V)11..24 β = 10 N VOLTAGE (0.18 - 40°C 25 °C R O TE 1 ER 125 °C EMIT0.8 - 40 °C MITT0.6 E- E AS0.6 25 °C SE-0.4 V = 1.0V B A CE V - BESAT0.40.1 1I2 5C °-C CO1LLECTOR CU10RRENT (mA10)0 300 V - BBE(ON)0.20.1 I C - COL1LECTOR CURRE1N0T (mA) 100 Collector-Cutoff Current vs Ambient Temperature A)600 n NT ( V C B = 20V E R100 R U C R O T C E 10 L L O C I - CBO 1 25 50 75 100 125 150 T - AMBIENT TEMPERATURE (° C) A

B NPN Switching Transistor S (continued) V 5 2 Typical Characteristics (continued) Output Capacitance vs Switching Times vs Reverse Bias Voltage Collector Current 5 100 F = 1.0MHz VC C = 3.0 V NCE (pF)34 C i b o TIMES (ns) 2500 I C = 10 I B 1 = I B 2 ttt = ss r 1 0 CAPACITA12 C o b o SWITCHING 1250 tttttt ss ss s f ttt ss d 0 1 0.1 0.5 1 5 10 50 2 5 10 20 50 100 300 REVERSE BIAS VOLTAGE (V) I C - COLLECTOR CURRENT (mA) Switching Times vs Storage Time vs Turn On Ambient Temperature and Turn Off Base Currents A) 12 m-12 ttt ss f T ( I C = 10 mA MES (ns)180 ttt ss s CURREN-1-08 VC C = 3.0 V 3 G TI 6 ASE -6 t s = 3.0 ns HIN ttt ss d F B 4.0 ns C 4 F -4 T ttt O WI ss r N S 2 I C = 10 mA, I B 1 = 3.0 mA, I B 2 = 1.5 mA, V C C = 3.0 V TUR -2 6.0 ns 025 50 75 100 I - B2 00 2 4 6 8 10 T A - AMBIENT TEMPERATURE (° C) I B 1 - TURN ON BASE CURRENT (mA) Storage Time vs Turn On Storage Time vs Turn On and Turn Off Base Currents and Turn Off Base Currents A) A) T (m-12 I C = 10 mA T (m-30 I C = 100 mA 4.0 ns EN-10 VC C = 3.0 V EN-25 VC C = 3.0 V R R CUR -8 CUR-20 t S = 3.0 ns 6.0 ns 8.0 ns E t s = 3.0 ns E AS -6 AS-15 B B FF -4 4.0 ns FF -10 O O 16.0 ns N N UR -2 6.0 ns UR -5 I - TB2 00 2 4 6 8 10 I - TB2 00 5 10 15 20 25 30 I B 1 - TURN ON BASE CURRENT (mA) I B 1 - TURN ON BASE CURRENT (mA)

B NPN Switching Transistor S V (continued) 5 2 Typical Characteristics (continued) Fall Time vs Turn On Fall Time vs Turn On and Turn Off Base Currents and Turn Off Base Currents A) A) m-6 m-12 T ( I C = 10 mA T ( I C = 30 mA EN-5 VC C = 3.0 V EN-10 VC C = 3.0 V 3.0 ns R R 4.0 ns R R U-4 8.0 ns U -8 E C t f = 7.0 ns E C ft = 2.0 ns AS-3 AS -6 5.0 ns B B F F OF-2 10 ns OF -4 N N R-1 R -2 U U T T I - B2 00 2 4 6 8 10 I - B2 00 2 4 6 8 10 12 I - TURN ON BASE CURRENT (mA) I - TURN ON BASE CURRENT (mA) B1 B1 Fall Time vs Turn On Delay Time vs Base-Emitter OFF mA)-30 and Turn Off Base Currents E (V)-6Voltage and Turn On Base Current ASE CURRENT (---221505 t I V fC C= = C 2 1 =.00 03n .0ms VA 3.0 ns 4.0 ns 8.0 ns ER OFF VOLTAG---543 t V I d C C= = C 8 =1.0 03 n.m0s AV 5.0 ns 4.0 ns B T FF -10 12.0 ns MIT-2 O E URN -5 ASE--1 3.0 ns T B I - B2 00 I 5B 1 - TUR1N0 ON BA1S5E CUR2R0ENT (m2A5) 30 V - BE(O) 01 I 2B 1 - TURN ON5 BASE C1U0RRENT2 (0mA) 50 Rise Time vs. Turn On Base Power Dissipation vs Current and Collector Current Ambient Temperature A) m50 350 T ( VC C = 3.0 V W) N m300 RRE10 t r = 2.0 ns ON (250 SOT-23 CU ATI SE 5.0 ns SIP200 A S N B 1 R DI150 I - TURN OB1 01 10 ns 10 20 ns 100 500 P - POWED1050000 25 50 75 100 125 150 I C - COLLECTOR CURRENT (mA) TEMPERATURE ( o C)

B NPN Switching Transistor S V (continued) 5 2 Test Circuits 'A' 890 ΩΩΩΩΩ 0.1 µµµµµF 1 KΩΩΩΩΩ +6V 1at0 %po iPntu 'l sAe' waveform 0 0 V VIN 0.1 µµµµµF 500 ΩΩΩΩΩ - 4V IN V OUT - 10 91 ΩΩΩΩΩ V 56 ΩΩΩΩΩ 500 ΩΩΩΩΩ 10% OUT Pulse generator t VSoINu Rrcisee I mTipmeed a <n c 1e n =s 50Ω 0.0023µµµµµF 0.0023µµµµµF s PW ≥ 300 ns Duty Cycle < 2% + + 11 V 10 µµµµµF 10 µµµµµF 10 V FIGURE 1: Charge Storage Time Measurement Circuit VOUT 0 10% 220 ΩΩΩΩΩ VIN VIN 3.3 KΩΩΩΩΩ VIN 10% 0 VOUT90% 50 ΩΩΩΩΩ 3.3 KΩΩΩΩΩ 50 ΩΩΩΩΩ VOUT toff tVoBffB = 9102% V ton tVon = - 3.0 V 0.0023µµµµµF 0.05 µµµµµF 0.05 µµµµµF 0.0023µµµµµF VIN = - 20.9 V 3 VBB = + 15.25 V To sampling oscilloscope input IN impedance = 50Ω Pulse generator Rise Time ≤ 1 ns V Rise Time < 1 ns SoINurce Impedance = 50Ω PDWuty ≥ C 3yc0l0e n <s 2% VBB 0.1 µµµµµF 0.1 µµµµµF VCC = 3.0 V FIGURE 2: t , t Measurement Circuit ON OFF

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