BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits (cid:132) Logic-level compatible (cid:132) ESD protection up to 1 kV (cid:132) Very fast switching (cid:132) AEC-Q101 qualified (cid:132) Trench MOSFET technology 1.3 Applications (cid:132) Relay driver (cid:132) High-side loadswitch (cid:132) High-speed line driver (cid:132) Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25°C - - -50 V DS j V gate-source voltage -20 - 20 V GS I drain current V =-10V; T =25°C [1] - - -180 mA D GS amb Static characteristics R drain-source on-state V =-10V; I =-100mA; - 4.5 7.5 Ω DSon GS D resistance T =25°C j [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning infor mation Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain 1 2 G SOT23 (TO-236AB) S sym146 3. Ordering information Table 3. Ordering info rmation Type number Package Name Description Version BSS84AK TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking cod es Type number Marking code[1] BSS84AK %VS [1] % = placeholder for manufacturing site code BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 2 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 5. Limiting values Table 5. Limiting valu es In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25°C - -50 V DS j V gate-source voltage -20 20 V GS I drain current V =-10V; T =25°C [1] - -180 mA D GS amb V =-10V; T =100°C [1] - -120 mA GS amb I peak drain current T =25°C; single pulse; t ≤10µs - -0.7 A DM amb p P total power dissipation T =25°C [2] - 350 mW tot amb [1] - 420 mW T =25°C - 1140 mW sp T junction temperature -55 150 °C j T ambient temperature -55 150 °C amb T storage temperature -65 150 °C stg Source-drain diode I source current T =25°C [1] - -180 mA S amb ESD maximum rating V electrostatic discharge voltage HBM [3] - 1000 V ESD [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 001aao121 001aao122 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 -75 -25 25 75 125 175 -75 -25 25 75 125 175 Tj (°C) Tj (°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of junction temperature function of junction temperature BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 3 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 001aao123 -1 ID (A) (1) -10-1 (2) (3) (4) -10-2 (5) -10-3 -10-1 -1 -10 -102 VDS (V) I is single pulse DM (1) t = 1 ms p (2) t = 10 ms p (3) t = 100 ms p (4) DC; T = 25 °C sp (5) DC; T = 25 °C; drain mounting pad 1 cm2 amb Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 4 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal cha racteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to ambient in free air [1] - 310 370 K/W th(j-a) [2] - 260 300 K/W R thermal resistance from junction to solder point - - 115 K/W th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 103 017aaa015 Zth(j-a) duty cycle = 1 (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 10 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa016 Zth(j-a) duty cycle = 1 (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0 10 0.01 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 5 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 7. Characteristics Table 7. Characterist ics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V drain-source breakdown I =-10µA; V =0V; T =25°C -50 - - V (BR)DSS D GS j voltage V gate-source threshold voltage I =-250µA; V =V ; T =25°C -1.1 -1.6 -2.1 V GSth D DS GS j I drain leakage current V =-50V; V =0V; T =25°C - - -1 µA DSS DS GS j V =-50V; V =0V; T =150°C - - -2 µA DS GS j I gate leakage current V =-20V; V =0V; T =25°C - - -10 µA GSS GS DS j V =20V; V =0V; T =25°C - - -10 µA GS DS j R drain-source on-state V =-10V; I =-100mA; T =25°C - 4.5 7.5 Ω DSon GS D j resistance V =-10V; I =-100mA; T =150°C - 8 13.5 Ω GS D j V =-5V; I =-100mA; T =25°C - 5.7 8.5 Ω GS D j g forward transconductance V =-10V; I =-100mA; T =25°C - 150 - mS fs DS D j Dynamic characteristics Q total gate charge V =-25V; I =-200mA; V =-5V; - 0.26 0.35 nC G(tot) DS D GS T =25°C Q gate-source charge j - 0.12 - nC GS Q gate-drain charge - 0.09 - nC GD C input capacitance V =-25V; f=1MHz; V =0V; - 24 36 pF iss DS GS T =25°C C output capacitance j - 4.5 - pF oss C reverse transfer capacitance - 1.3 - pF rss t turn-on delay time V =-30V; R =250Ω; V =-10V; - 13 26 ns d(on) DS L GS R =6Ω; T =25°C t rise time G(ext) j - 11 - ns r t turn-off delay time - 48 96 ns d(off) t fall time - 25 - ns f Source-drain diode V source-drain voltage I =-115mA; V =0V; T =25°C -0.48 -0.85 -1.2 V SD S GS j BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 6 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET -0.20 001aao124 -10-3 001aao125 VGS = -10 V -4.0 V -3.5 V ID (A) ID (A) -0.15 (1) (2) (3) -10-4 -3.0 V -0.10 -10-5 -0.05 -2.5 V 0 -10-6 0 -1 -2 -3 -4 0 -0.5 -1.0 -1.5 -2.0 -2.5 VDS (V) VGS (V) T = 25 °C T = 25 °C; V = -5 V j j DS (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics; drain current as a Fig 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage 001aao126 001aao127 12 14 (1) (2) (3) RDSon RDSon (Ω) (Ω) 8 (4) 10 (1) (5) 4 6 (2) 0 2 0 -0.1 -0.2 -0.3 -0.4 0 -2 -4 -6 -8 -10 ID (A) VGS (V) T = 25 °C I = -200 mA j D (1) V = -3.0 V (1) T = 150 °C GS j (2) V = -3.5 V (2) T = 25 °C GS j (3) V = -4.0 V GS (4) V = -5.0 V GS (5) V = -10.0 V GS Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 7 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 001aao128 001aao129 -0.20 2.0 ID a (A) (1) (2) -0.15 1.5 -0.10 1.0 -0.05 0.5 (2) (1) 0 0 0 -1 -2 -3 -4 -60 0 60 120 180 VGS (V) Tj (°C) V > I x R DS D DSon (1) T = 25 °C j (2) T = 150 °C j Fig 10. Transfer characteristics: drain current as a Fig 11. Normalized drain-source on-state resistance as function of gate-source voltage; typical values a function of junction temperature; typical values -3 001aao130 102 001aao131 VGS(th) (V) C (pF) (1) -2 (1) (2) (2) 10 -1 (3) (3) 0 1 -60 0 60 120 180 -10-1 -1 -10 -102 Tj (°C) VDS (V) I = -0.25 mA; V = V f = 1 MHz, V = 0 V D DS GS GS (1) maximum values (1) C iss (2) typical values (2) C oss (3) minimum values (3) C rss Fig 12. Gate-source threshold voltage as a function of Fig 13. Input, output and reverse transfer capacitances junction temperature as a function of drain-source voltage; typical values BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 8 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 001aao132 -10 VGS VDS (V) -8 ID VGS(pl) -6 VGS(th) -4 VGS QGS1 QGS2 -2 QGS QGD QG(tot) 003aaa508 0 0 0.2 0.4 0.6 QG (nC) I = -0.2 A; V = -25 V; T = 25 °C D DS amb Fig 14. Gate-source voltage as a function of gate Fig 15. Gate charge waveform definitions charge; typical values 001aao133 -0.3 IS (A) -0.2 -0.1 (1) (2) 0 0 -0.4 -0.8 -1.2 VSD (V) V = 0 V GS (1) T = 150 °C j (2) T = 25 °C j Fig 16. Source current as a function of source-drain voltage; typical values BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 9 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 8. Test information P duty cycle δ = t1 t2 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 10 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 Fig 18. Package outline SOT23 (TO-236AB) BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 11 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 1.7 2 solder paste 0.7 0.6 occupied area (3×) (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 12 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 11. Revision history Table 8. Revision his tory Document ID Release date Data sheet status Change notice Supersedes BSS84AK v.1 20110523 Product data sheet - - BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 13 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without Preview — The document is a preview version only. The document is still limitation specifications and product descriptions, at any time and without subject to formal approval, which may result in modifications or additions. notice. This document supersedes and replaces all information supplied prior Nexperia does not give any representations or warranties as to to the publication hereof. the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or Draft — The document is a draft version only. The content is still under safety-critical systems or equipment, nor in applications where failure or internal review and subject to formal approval, which may result in malfunction of a Nexperia product can reasonably be expected modifications or additions. Nexperia does not give any to result in personal injury, death or severe property or environmental representations or warranties as to the accuracy or completeness of damage. Nexperia accepts no liability for inclusion and/or use of information included herein and shall have no liability for the consequences of Nexperia products in such equipment or applications and use of such information. therefore such inclusion and/or use is at the customer’s own risk. Short data sheet — A short data sheet is an extract from a full data sheet Quick reference data — The Quick reference data is an extract of the with the same product type number(s) and title. A short data sheet is intended product data given in the Limiting values and Characteristics sections of this for quick reference only and should not be relied upon to contain detailed and document, and as such is not complete, exhaustive or legally binding. full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales Applications — Applications that are described herein for any of these office. In case of any inconsistency or conflict with the short data sheet, the products are for illustrative purposes only. Nexperia makes no full data sheet shall prevail. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Customers are responsible for the design and operation of their applications Nexperia and its customer, unless Nexperia and and products using Nexperia products, and Nexperia customer have explicitly agreed otherwise in writing. In no event however, accepts no liability for any assistance with applications or customer product shall an agreement be valid in which the Nexperia product is design. It is customer’s sole responsibility to determine whether the Nexperia deemed to offer functions and qualities beyond those described in the product is suitable and fit for the customer’s applications and Product data sheet. products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their 12.3 Disclaimers applications and products. Limited warranty and liability — Information in this document is believed to Nexperia does not accept any liability related to any default, be accurate and reliable. However, Nexperia does not give any damage, costs or problem which is based on any weakness or default in the representations or warranties, expressed or implied, as to the accuracy or customer’s applications or products, or the application or use by customer’s completeness of such information and shall have no liability for the third party customer(s). Customer is responsible for doing all necessary consequences of use of such information. testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and In no event shall Nexperia be liable for any indirect, incidental, the products or of the application or use by customer’s third party punitive, special or consequential damages (including - without limitation - lost customer(s). Nexperia does not accept any liability in this respect. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Limiting values — Stress above one or more limiting values (as defined in damages are based on tort (including negligence), warranty, breach of the Absolute Maximum Ratings System of IEC 60134) will cause permanent contract or any other legal theory. damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in Notwithstanding any damages that customer might incur for any reason the Recommended operating conditions section (if present) or the whatsoever, Nexperia’s aggregate and cumulative liability towards Characteristics sections of this document is not warranted. Constant or customer for the products described herein shall be limited in accordance repeated exposure to limiting values will permanently and irreversibly affect with the Terms and conditions of commercial sale of Nexperia. the quality and reliability of the device. BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 14 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET Terms and conditions of commercial sale — Nexperia 12.4 Trademarks products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise Notice: All referenced brands, product names, service names and trademarks agreed in a valid written individual agreement. In case an individual are the property of their respective owners. agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 13. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BSS84AK All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 23 May 2011 15 of 16

BSS84AK Nexperia 50 V, 180 mA P-channel Trench MOSFET 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . .11 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15 13 Contact information. . . . . . . . . . . . . . . . . . . . . .15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 23 May 2011