BSS83 MOSFET N-channel enhancement switching transistor Rev. 03 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name -NXPSemiconductors,whichwillbeusedinfuturedatasheetstogetherwithnewcontact details. IndatasheetswherethepreviousPhilipsreferencesremain,pleaseusethenewlinksas shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 DESCRIPTION Marking code: Symmetrical insulated-gate silicon BSS83= %M9 MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. handbook, halfpage 4 3 d APPLICATIONS b • analog and/or digital switch g s • switch driver 1 2 Top view MAM389 PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Fig.1 Simplified outline and symbol. Note 1. Drain and source are interchangeable. QUICK REFERENCE DATA Drain-source voltage V max. 10 V DS Source-drain voltage V max. 10 V SD Drain-substrate voltage V max. 15 V DB Source-substrate voltage V max. 15 V SB Drain current (DC) I max. 50 mA D Total power dissipation up to T =25(cid:176) C P max. 230 mW amb tot Gate-source threshold voltage V =V ;V =0; > 0.1 V DS GS SB V I =1m A GS(th) < 2.0 V D Drain-source ON-resistance V =10 V; V =0; I =0.1 mA R < 45 W GS SB D DSon Feed-back capacitance V =V =- 15 V; GS BS V =10 V; f = 1 MHz C typ. 0.6 pF DS rss Rev. 03 - 21 November 2007 2 of 9

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage V max. 10 V DS Source-drain voltage V max. 10 V SD Drain-substrate voltage V max. 15 V DB Source-substrate voltage V max. 15 V SB Drain current (DC) I max. 50 mA D Total power dissipation up to T =25(cid:176) C(1) P max. 230 mW amb tot Storage temperature range T - 65to+150 (cid:176) C stg Junction temperature T max. 125 (cid:176) C j THERMAL RESISTANCE From junction to ambient in free air(1) R = 430 K/W th j-a Rev. 03 - 21 November 2007 3 of 9

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 CHARACTERISTICS T =25(cid:176) C unless otherwise specified amb Drain-source breakdown voltage V =V =- 5 V; I =10 nA V > 10 V GS BS D (BR)DSX Source-drain breakdown voltage V =V =- 5 V; I =10 nA V > 10 V GD BD D (BR)SDX Drain-substrate breakdown voltage V =0; I =10 nA; open source V > 15 V GB D (BR)DBO Source-substrate breakdown voltage V =0; I =10 nA; open drain V > 15 V GB D (BR)SBO Drain-source leakage current V =V =- 2 V; V =6,6 V I < 10 nA GS BS DS DSoff Source-drain leakage current V =V =- 2 V; V =6,6 V I < 10 nA GD BD SD SDoff Forward transconductance at f = 1 kHz V =10 V; V =0; I =20 mA > 10 mS DS SB D g fs typ. 15 mS Gate-source threshold voltage V =V ; V =0; I = 1m A > 0,1 V DS GS SB D V GS(th) < 2,0 V Drain-source ON-resistance I =0,1 mA; D V =5 V; V =0 R < 70 W GS SB DSon V =10 V; V =0 R < 45 W GS SB DSon V =3,2 V; V =6,8 V (see Fig.4) typ. 80 W GS SB R DSon < 120 W Gate-substrate zener voltages V =V =0;- I =10m A V > 12,5 V DB SB G Z(1) V =V =0;+I =10m A V > 12,5 V DB SB G Z(2) Capacitances at f = 1 MHz V =V =- 15 V; V =10 V GS BS DS Feed-back capacitance C typ. 0,6 pF rss Input capacitance C typ. 1,5 pF iss Output capacitance C typ. 1,0 pF oss Switching times (see Fig.2) V =10 V; V =5 V t typ. 1,0 ns DD i on t typ. 5,0 ns off Note 1. Device mounted on a ceramic substrate of 8 mm· 10 mm· 0,7 mm. Rev. 03 - 21 November 2007 4 of 9

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 Pulse generator: R = 50 W i t < 0,5 ns r t < 1,0 ns f t = 20 ns p d < 0,01 handbook, full pagewidth 90% 90% 50 W 0.1 m F VDD Vo INPUT 630 W 10% 10% tr tf ton toff Vi T.U.T 90% 90% 50 W OUTPUT MBK297 10% 10% MBK296 Fig.2 Switching times test circuit and input and output waveforms. MDA250 MDA251 60 1.2 handbook, halfpage handbook, halfpage ID VGS = 4.5 V ID VGS = 10 V 5 V 4 V 3.2 V (mA) (mA) 4 V 3 V 40 0.8 3.5 V 3 V 2.5 V 20 0.4 2 V 2 V 0 0 0 4 8 12 0 40 80 120 VDS (V) VDSon (mV) T =25(cid:176) C. T =25(cid:176) C. j j Fig.3 V =0; typical values. Fig.4 V =6,8 V; typical values. SB SB Rev. 03 - 21 November 2007 5 of 9

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 MDA252 MDA253 50 12 handbook, halfpage handbook, halfpage ID (mA) ID VSB = 0 V 4 V 12 V 40 (mA) 8 V 8 30 20 4 10 0 0 0 1 2 3 4 0 1 2 3 4 VGS (V) VGSth (V) T =25(cid:176) C. T =25(cid:176) C. j j Fig.5 V =10 V; V =0; typical values. Fig.6 V =V =V . DS BS DS GS GS(th) MDA254 1.2 handbook, halfpage VGS = ID 10 V 5 V 4 V 3 V 2 V (mA) 0.8 0.4 0 0 20 40 60 80 100 VDSon (mV) T =25(cid:176) C. j Fig.7 V =0; typical values. SB Rev. 03 - 21 November 2007 6 of 9

NXP Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 PACKAGE OUTLINE Plastic surface mounted package; 4 leads SOT143B D B E A X y v M A HE e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp b1 c D E e e1 HE Lp Q v w y 1.1 0.48 0.88 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 1.7 0.2 0.1 0.1 0.9 0.38 0.78 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT143B 97-02-28 Rev. 03 - 21 November 2007 7 of 9

BSS83 NXP Semiconductors MOSFET N-channel enhancement switching transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft —The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Rev. 03 - 21 November 2007 8 of 9

BSS83 NXP Semiconductors MOSFET N-channel enhancement switching transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BSS83_N_3 20071121 Product data sheet - BSS83_CNV_2 Modifications: • Page 2; column 2; Marking code; row 1 changed BSS83_CNV_2 19910401 Product specification - - Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 21 November 2007 Document identifier: BSS83_N_3