BSS63LT1G, NSVBSS63LT1G High Voltage Transistor PNP Silicon www.onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector−Emitter Voltage VCEO −100 Vdc Collector−Emitter Voltage VCER Vdc 3 RBE = 10 k(cid:2) −110 Collector Current − Continuous IC −100 mAdc 1 THERMAL CHARACTERISTICS 2 Characteristic Symbol Max Unit SOT−23 CASE 318 Total Device Dissipation FR−5 Board, PD mW STYLE 6 (Note 1) TA = 25°C 225 Derate above 25°C 1.8 mW/°C Thermal Resistance Junction−to−Ambient R(cid:3)JA 556 °C/W MARKING DIAGRAM Total Device Dissipation PD mW Alumina Substrate, (Note 2) TA = 25°C 300 mW/°C BM M(cid:2) Derate above 25°C 2.4 (cid:2) Thermal Resistance, Junction−to−Ambient R(cid:3)JA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to °C +150 BM = Device Code M = Date Code* Stresses exceeding those listed in the Maximum Ratings table may damage the (cid:2) = Pb−Free Package device. If any of these limits are exceeded, device functionality should not be (Note: Microdot may be in either location) assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. *Date Code orientation and/or overbar may 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BSS63LT1G SOT−23 3000 / Tape & Reel (Pb−free) NSVBSS63LT1G SOT−23 3000 / Tape & Reel (Pb−free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 − Rev. 8 BSS63LT1/D

BSS63LT1G, NSVBSS63LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −100 (cid:4)Adc) −100 − − Collector−Emitter Breakdown Voltage V(BR)CER Vdc (IC = −10 (cid:4)Adc, IE = 0, RBE = 10 k(cid:2)) −110 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IE = −10 (cid:4)Adc, IE = 0) −110 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = −10 (cid:4)Adc) −6.0 − − Collector Cutoff Current ICBO nAdc (VCB = −90 Vdc, IE = 0) − − −100 Collector Cutoff Current ICER (cid:4)Adc (VCE = −110 Vdc, RBE = 10 k(cid:2)) − − −10 Emitter Cutoff Current IEBO nAdc (VEB = −6.0 Vdc, IC = 0) − − −200 ON CHARACTERISTICS DC Current Gain hFE − (IC = −10 mAdc, VCE = −1.0 Vdc) 30 − − (IC = −25 mAdc, VCE = −1.0 Vdc) 30 − − Collector−Emitter Saturation Voltage VCE(sat) mVdc (IC = −25 mAdc, IB = −2.5 mAdc) − − −250 Base−Emitter Saturation Voltage VBE(sat) mVdc (IC = −25 mAdc, IB = −2.5 mAdc) − − −900 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = −25 mAdc, VCE = −5.0 Vdc, f = 20 MHz) 50 95 − Case Capacitance CC pF (IE = IC = 0, VCB = −10 Vdc, f = 1.0 MHz) − − 20 Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, Rg = 2 k(cid:2), f = 1.0 kHz, BW = 200 Hz) − − 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR−5 = 1.0 (cid:2) 0.75 (cid:2) 0.062 in. 2. Alumina = 0.4 (cid:2) 0.3 (cid:2) 0.024 in. 99.5% alumina. www.onsemi.com 2

BSS63LT1G, NSVBSS63LT1G TYPICAL CHARACTERISTICS 1000 1 VCE = −5 V R IC/IB = 10 E AIN 150°C MITTE (V) G 25°C EG URRENT 100 −55°C ECTOR−N VOLTA 0.1 C C OLLATIO 150°C 25°C D CR h, FE , E(sat)SATU C −55°C V 10 0.01 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current 1.1 1.0 ON 1.0 IC/IB = 10 ON VCE = −5 V TI TI 0.9 URA 0.9 −55°C URA 0.8 −55°C T 0.8 T A A TTER SGE (V) 00..76 25°C TTER SGE (V)00..76 25°C EMILTA 0.5 EMILTA0.5 −O 150°C −O EV 0.4 EV AS AS 0.4 150°C B 0.3 B , at) 0.2 , at) 0.3 s s E( E( B 0.1 B 0.2 V V 1 10 100 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage vs. Figure 4. Base−Emitter Voltage vs. Collector Collector Current Current °mV/C) 22..64 IC/IB = 10 GE (V) 10..09 TA = 25°C NT ( TA = −55°C to 150°C LTA 0.8 E 2.2 O CI V 0.7 FFI 2.0 ER 0.6 E T O T C 1.8 MI 0.5 E E R 1.6 R− 0.4 U O 50 mA AT T 0.3 ER 1.4 EC 0.2 20 mA 100 mA IC = 200 mA , TEMPE 11..02 , COLLCE 0.10 IC = 10 mA VB 0.1 1 10 100 1000 V 0.01 0.1 1 10 100 (cid:3) IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Base−Emitter Temperature Figure 6. Collector Saturation Region Coefficient www.onsemi.com 3

BSS63LT1G, NSVBSS63LT1G TYPICAL CHARACTERISTICS 100 1000 Cibo TJ = 25°C VCE = −5 V TH TJ = 25°C D F) WI E (p NDHz) 100 APACITANC 10 Cobo NT−GAIN BARODUCT (M 10 C EP C, R R U C 1 1 0.1 0.2 0.40.6 1 2 4 6 10 20 40 60 100 0.1 0.2 0.5 1 2 5 10 20 50 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 7. Capacitance Figure 8. Current−Gain Bandwidth Product 1000 A) 10 ms m NT ( 100 100 (cid:4)s E R R U 1 s C R 10 O T C E L L 1 O C , C I Single Pulse Test at TA = 25°C 0.1 0.1 1 10 100 1000 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area www.onsemi.com 4

BSS63LT1G, NSVBSS63LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4. DPRIMOETNRSUIOSINOSN DS, AONRD G EA DTEO BNUORTR INS.CLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 6: END VIEW PIN 1. BASE 2. EMITTER 3. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BSS63LT1/D 5

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