BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in www.onsemi.com portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features R = 3.5 (cid:2) DS(on) • Low Threshold Voltage (V : 0.85 V−1.5 V) Makes it Ideal for GS(th) Low Voltage Applications N−Channel • Miniature SOT−23 Surface Mount Package Saves Board Space 3 • BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1 Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 2 Rating Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc 3 MARKING DIAGRAM Gate−to−Source Voltage − Continuous VGS ±20 Vdc Drain Current mA 1 − Continuous @ TA = 25°C ID 200 2 J1 M(cid:2) − Pulsed Drain Current (tp ≤ 10 (cid:2)s) IDM 800 (cid:2) SOT−23 Total Power Dissipation @ TA = 25°C PD 225 mW CASE 318 1 Operating and Storage Temperature TJ, Tstg −55 to 150 °C STYLE 21 Range J1 = Device Code Thermal Resistance, R(cid:3)JA 556 °C/W M = Date Code* Junction−to−Ambient (cid:2) = Pb−Free Package Maximum Lead Temperature for TL 260 °C (Note: Microdot may be in either location) Soldering Purposes, for 10 seconds *Date Code orientation and/or overbar may Stresses exceeding those listed in the Maximum Ratings table may damage the vary depending upon manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping† BSS138LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BVSS138LT1G SOT−23 3000 / Tape & Reel (Pb−Free) BSS138LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) BVSS138LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2018 − Rev. 11 BSS138LT1/D

BSS138L, BVSS138L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS 50 − − Vdc (VGS = 0 Vdc, ID = 250 (cid:2)Adc) Zero Gate Voltage Drain Current IDSS (cid:2)Adc (VDS = 25 Vdc, VGS = 0 Vdc, 25°C) − − 0.1 (VDS = 50 Vdc, VGS = 0 Vdc, 25°C) − − 0.5 (VDS = 50 Vdc, VGS = 0 Vdc, 150°C) − − 5.0 Gate−Source Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 (cid:2)Adc ON CHARACTERISTICS (Note 1) Gate−Source Threshold Voltage VGS(th) 0.85 − 1.5 Vdc (VDS = VGS, ID = 1.0 mAdc) Static Drain−to−Source On−Resistance rDS(on) (cid:4) (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) − 5.6 10 (VGS = 5.0 Vdc, ID = 200 mAdc) − − 3.5 Forward Transconductance gfs 100 − − mmhos (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time td(on) − − 20 ns (VDD = 30 Vdc, ID = 0.2 Adc,) Turn−Off Delay Time td(off) − − 20 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤300 (cid:2)s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2

BSS138L, BVSS138L TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.9 TJ = 25°C VGS = 3.5 V VDS = 10 V 25°C 0.7 0.8 -55°C AMPS) 0.6 VGS = 3.25 V AMPS) 0.7 150°C NT ( 0.5 VGS = 3.0 V NT ( 0.6 E E URR 0.4 VGS = 2.75 V URR 0.5 C C 0.4 AIN 0.3 VGS = 2.5 V AIN R R 0.3 D D , D0.2 , D 0.2 I I 0.1 0.1 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2.2 1.25 E NC ID = 1.0 mA A 2 T RESIS 1.8 VIDG =S 0=. 81 0A V LTS) 1.125 O-SOURCE RMALIZED) 11..46 VIDG =S 0=. 54 .A5 V RIANCE (VO 1 TO A DRAIN-(N 1.21 , Vs(th)0.875 , n) Vg o S( 0.8 D R 0.6 0.75 -(cid:2)55 -5 45 95 145 -(cid:2)55 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance Variation with Figure 4. Threshold Voltage Variation Temperature with Temperature 10 1.0E-5 VOLTS) VTJD S= =2 54°0C V E (A) GE ( 8 KAG 1.0E-6 150°C A A SOURCE VOLT 46 O-SOURCE LE 1.0E-7 125°C E-TO- ID = 200 mA AIN-T 1.0E-8 AT 2 DR V, GGS I, DSS 0 1.0E-9 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 35 40 45 50 QT, TOTAL GATE CHARGE (pC) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Gate Charge Figure 6. IDSS www.onsemi.com 3

BSS138L, BVSS138L TYPICAL ELECTRICAL CHARACTERISTICS S) 10 S) 8 HM VGS = 2.5 V HM VGS = 2.75 V O 9 O NCE ( 8 NCE ( 7 150°C TA 150°C TA 6 S 7 S SI SI E E E R 6 E R 5 C C R R OU 5 25°C OU 4 S S - 4 - 25°C O O T T 3 N- 3 -55°C N- AI AI DR 2 DR 2 -55°C , n) , n) o 1 o 1 DS( 0 0.05 0.1 0.15 0.2 0.25 DS( 0 0.05 0.1 0.15 0.2 0.25 R R ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 7. On−Resistance versus Drain Current Figure 8. On−Resistance versus Drain Current S) 6 S) 4.5 M M OH 5.5 VGS = 4.5 V OH VGS = 10 V E ( 150°C E ( 4 150°C NC 5 NC A A ST 4.5 ST 3.5 SI SI RE 4 RE E E 3 C 3.5 C R R SOU 3 25°C SOU 2.5 25°C - - O O T 2.5 T 2 - - N N AI 2 -55°C AI DR DR 1.5 -55°C , n) 1.5 , n) S(o 1 S(o 1 D 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 D 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 R R ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 9. On−Resistance versus Drain Current Figure 10. On−Resistance versus Drain Current 1 120 VGS = 2.75 V S) 100 TJ = 25°C P f = 1 MHz DE CURRENT (AM 0.1 TJ = 150°C 25°C -55°C PACITANCE (pF) 8600 Ciss I, DIOD 0.01 C, CA 40 Coss 20 Crss 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Body Diode Forward Voltage Figure 12. Capacitance www.onsemi.com 4

BSS138L, BVSS138L TYPICAL ELECTRICAL CHARACTERISTICS 1 NT (A) TVAG S= ≤2 51°0C V 1 ms E R 10 ms R U C 0.1 E C R U O S − O 0.01 T − N dc AI RDS(on) LIMIT R THERMAL LIMIT D , DS0.001 PACKAGE LIMIT I 0.1 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Safe Operating Area www.onsemi.com 5

BSS138L, BVSS138L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF 3 THE BASE MATERIAL. E HE T 4P.RDOITMREUNSSIIOONNSS, DO RA NGDA TEE D BOU NRORTS .INCLUDE MOLD FLASH, 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 3Xb L1 A1 0.01 0.06 0.10 0.000 0.002 0.004 b 0.37 0.44 0.50 0.015 0.017 0.020 e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008 TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 A L1 0.35 0.54 0.69 0.014 0.021 0.027 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10° 0° −−− 10° A1 c SIDE VIEW SEE VIEW C STYLE 21: END VIEW PIN 1. GATE 2. SOURCE 3. DRAIN RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 0.90 3X0.80 0.95 PITCH DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com BSS138LT1/D 6

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