ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > BSR31,115
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BSR31,115产品简介:
ICGOO电子元器件商城为您提供BSR31,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BSR31,115价格参考¥2.45-¥2.45。NXP SemiconductorsBSR31,115封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 60V 1A 100MHz 1.35W 表面贴装 SOT-89-3。您可以下载BSR31,115参考资料、Datasheet数据手册功能说明书,资料中有BSR31,115 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PNP 80V 1000MA SOT89两极晶体管 - BJT TRANS MED PWR TAPE-7 |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,NXP Semiconductors BSR31,115- |
数据手册 | |
产品型号 | BSR31,115 |
PCN封装 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 500mV @ 50mA,500mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 100 @ 100mA,5V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-89-3 |
其它名称 | 568-6856-6 |
功率-最大值 | 1.35W |
包装 | Digi-Reel® |
发射极-基极电压VEBO | 5 V |
商标 | NXP Semiconductors |
增益带宽产品fT | 100 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-243AA |
封装/箱体 | SOT-89 |
工厂包装数量 | 1000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 1350 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 1 A |
最小工作温度 | - 65 C |
标准包装 | 1 |
特色产品 | http://www.digikey.com/cn/zh/ph/NXP/I2C.html |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 1A |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 30 at 100 uA at 5 V |
直流集电极/BaseGainhfeMin | 30 at 100 uA at 5 V, 100 at 100 mA at 5 V, 50 at 500 mA at 5 V |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 70 V |
零件号别名 | BSR31 T/R |
频率-跃迁 | 100MHz |
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BSR30; BSR31; BSR33 PNP medium power transistors Product data sheet 2004 Dec 13 Supersedes data of 1999 Apr 26
NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 FEATURES PINNING • High current (max. 1 A) PIN DESCRIPTION • Low voltage (max. 80 V). 1 emitter 2 collector APPLICATIONS 3 base • Telephony and general industrial applications • Thick and thin-film circuits. DESCRIPTION 2 PNP medium power transistor in a SOT89 plastic package. 3 NPN complements: BSR40; BSR41 and BSR43. 1 MARKING 3 2 1 sym079 TYPE NUMBER MARKING CODE BSR30 BR1 BSR31 BR2 Fig.1 Simplified outline (SOT89) and symbol. BSR33 BR4 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BSR30 SC-62 plastic surface mounted package; collector pad for good heat SOT89 BSR31 transfer; 3 leads BSR33 2004 Dec 13 2
NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BSR30; BSR31 − −70 V BSR33 − −90 V V collector-emitter voltage open base CEO BSR30; BSR31 − −60 V BSR33 − −80 V V emitter-base voltage open collector − −5 V EBO I collector current (DC) − −1 A C I peak collector current − −2 A CM I peak base current − −200 mA BM P total power dissipation T ≤ 25 °C; note 1 − 1.35 W tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T ambient temperature −65 +150 °C amb Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 93 K/W th(j-a) R thermal resistance from junction to soldering point 13 K/W th(j-s) Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Dec 13 3
NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I collector-base cut-off current I = 0 A; V = −60 V − −100 nA CBO E CB I = 0 A; V = −60 V; T = 150 °C − −50 μA E CB j I emitter-base cut-off current I = 0 A; V = −5 V − −100 nA EBO C EB h DC current gain I = −100 μA; V = −5 V; note 1 FE C CE BSR30 10 − BSR31; BSR33 30 − DC current gain I = −100 mA; V = −5 V; note 1 C CE BSR30 40 120 BSR31; BSR33 100 300 DC current gain I = −500 mA; V = −5 V; note 1 C CE BSR30 30 − BSR31; BSR33 50 − V collector-emitter saturation I = −150 mA; I = −15 mA; note 1 − −0.25 V CEsat C B voltage I = −500 mA; I = −50 mA; note 1 − −0.5 V C B V base-emitter saturation voltage I = −150 mA; I = −15 mA; note 1 − −1 V BEsat C B I = −500 mA; I = −50 mA; note 1 − −1.2 V C B f transition frequency I = −50 mA; V = −10 V; 100 − MHz T C CE f = 100 MHz Note 1. Pulse test: t = 300 μs; δ < 0.01. p 2004 Dec 13 4
NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 3 bp2 c w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w 1.6 0.48 0.53 1.8 0.44 4.6 2.6 4.25 1.2 mm 3.0 1.5 0.13 1.4 0.35 0.40 1.4 0.23 4.4 2.4 3.75 0.8 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-08-03 SOT89 TO-243 SC-62 06-03-16 2004 Dec 13 5
NXP Semiconductors Product data sheet PNP medium power transistors BSR30; BSR31; BSR33 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 13 6
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp7 Date of release: 2004 Dec 13 Document order number: 9397 750 13873