Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET age M3D087 BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification 2001 Dec 11 Supersedes data of 1997 Jun 23

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor FEATURES PINNING - SOT223 • Direct interface to C-MOS, TTL, etc. PIN DESCRIPTION • High-speed switching 1 gate • No secondary breakdown. 2 drain 3 source APPLICATIONS 4 drain • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers. handbook, halfpage 4 d DESCRIPTION N-channel enhancement mode vertical D-MOS transistor g in a SOT223 package. 1 2 3 s Top view MAM054 Marking codeBSP130. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage (DC) - 300 V DS I drain current (DC) - 350 mA D P total power dissipation T £ 25(cid:176) C - 1.5 W tot amb V gate-source voltage open drain - – 20 V GSO R drain-source on-state I =250mA; V =10V - 6 W DSon D GS resistance V gate-source cut-off voltage I =1mA; V =V 0.8 2 V GSoff D DS GS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage (DC) - 300 V DS V gate-source voltage (DC) open drain - – 20 V GSO I drain current (DC) - 350 mA D I peak drain current - 1.4 A DM P total power dissipation T £ 25(cid:176) C;note 1 - 1.5 W tot amb T storage temperature - 55 +150 (cid:176) C stg T junction temperature - 150 (cid:176) C j Note 1. Devicemountedonanepoxyprinted-circuitboard,40x40x1.5mm,mountingpadforthedraintabminimum6cm2. 2001Dec11 2

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R thermal resistance from junction to ambient; note 1 83.3 K/W th j-a Note 1. Devicemountedonanepoxyprinted-circuitboard,40x40x1.5mm,mountingpadforthedraintabminimum6cm2. STATIC CHARACTERISTICS T = 25(cid:176) C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source breakdown voltage I =10m A; V =0 300 - - V (BR)DSS D GS I gate-source leakage current V =– 20V; V =0 - - – 100 nA GSS GS DS V gate-source threshold voltage I =1mA; V =V 0.8 - 2 V GSth D DS GS R drain-source on-state resistance I =20mA; V =2.4V - 4.8 10 W DSon D GS I =250mA; V =10V - 3.7 6 W D GS I drain-source leakage current V =240V; V =0 - - 100 nA DSS DS GS (cid:247) Y (cid:247) transfer admittance I =250mA; V =25V 200 690 - mS fs D DS C input capacitance V =25V; V =0; f=1MHz - 100 120 pF iss DS GS C output capacitance V =25V; V =0; f=1MHz - 21 30 pF oss DS GS C feedback capacitance V =25V; V =0; f=1MHz - 10 15 pF rss DS GS Switching times (see Figs2 and3) t turn-on time I =250mA;V =50V; - 6 10 ns on D DD V =0to10V GS t turn-off time I = 250mA;V = 50V; - 46 60 ns off D DD V =10 to 0V GS 2001Dec11 3

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor handbook, halfpage 90 % handbook, halfpage VDD = 50 V INPUT 10 % 90 % 10 V OUTPUT ID 0 V 10 % 50 W ton toff MBB691 MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. MRC218 MLD765 2 250 handbook, halfpage handbook, halfpage Ptot C (pF) (W) 200 1.5 150 1 100 Ciss 0.5 50 Coss Crss 0 0 0 50 100 150 200 0 10 20 30 Tj ((cid:176)C) VDS (V) VGS=0; f=1MHz; Tj=25(cid:176)C. Fig.5 Capacitance as a function of drain-source Fig.4 Power derating curve. voltage; typical values. 2001Dec11 4

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor MLD766 MLD767 1.2 1.2 handbook, halfpage VGS = 10 V 5 V handbook, halfpage ID 4 V ID (A) 3.5 V (A) 3 V 0.8 0.8 0.4 0.4 2.5 V 2 V 0 0 0 4 8 12 0 2 4 6 8 10 VDS (V) VGS (V) Tj=25(cid:176)C. VDS=10V; Tj=25(cid:176)C. Fig.6 Typical output characteristics. Fig.7 Typical transfer characteristics. MLD768 MLD769 30 20 handbook, halfpage VGS = 2 V handbook, halfpage 2.5 V RDSon RDSon 3 V 3.5 V (W ) (W ) 15 20 10 10 5 4 V 5 V 10 V 0 0 10- 1 1 10 0 2 4 6 8 10 ID (A) VGS (V) Tj=25(cid:176)C. VDS=100mV; Tj=25(cid:176)C. Fig.8 Drain-source on-state resistance as a Fig.9 Drain-sourceon-stateresistanceasafunction function of drain current; typical values. of gate-source voltage; typical values. 2001Dec11 5

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor 102 MRC221 handbook, full pagewidd th= 0.75 Rth j-a 0.5 (K/W) 0.2 10 0.1 0.05 0.02 1 0.01 P d = tp T 0 tp t T 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 103 tp (s) Fig.10 Transient thermal resistance from junction to ambient as a function of pulse time. MLD773 10 handbook, halfpage ID (A) 1 (1) tp = 10 m s 100 m s 1 ms 10- 1 DC 10 ms 100 ms P d =tp T 1s 10- 2 tp t T 10- 3 1 10 102 103 VDS (V) d =0.01; Tamb=25(cid:176)C. (1) RDSon limitation. Fig.11 SOAR curve. 2001Dec11 6

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor MLD771 MLD772 2 1.25 handbook, halfpage handbook, halfpage k k (1) 1 1.5 (2) 0.75 1 0.5 0.5 0.25 0 0 - 50 0 50 100 150 -50 0 50 100 150 Tj ((cid:176)C) Tj ((cid:176)C) R atT k = -R---------D---S---(-o---an--)-t-- -2----5-----(cid:176)--j-C--- Typical DRSD(oSno)n; k = -V----G-V---S-G--(--tS-h--(-)-t--h-a--)-t-- a-2---t-5 --T---(cid:176)-j--C---. (1) ID=250mA; VGS=10V. (2)ID=20mA; VGS=2.4V. Typical VGSth at 1mA. Fig.12 Temperature coefficient of drain-source Fig.13 Temperature coefficient of gate-source on-state resistance; typical values. threshold voltage; typical values. 2001Dec11 7

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y HE v M A b1 4 Q A A1 1 2 3 Lp e1 bp w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y 1.8 0.10 0.80 3.1 0.32 6.7 3.7 7.3 1.1 0.95 mm 4.6 2.3 0.2 0.1 0.1 1.5 0.01 0.60 2.9 0.22 6.3 3.3 6.7 0.7 0.85 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT223 SC-73 99-09-13 2001Dec11 8

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor DATA SHEET STATUS PRODUCT DATA SHEET STATUS(1) DEFINITIONS STATUS(2) Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to makechanges at any time in order to improve the design, manufacturing and supply. Changes will be communicatedaccording to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification(cid:190) The data in a short-form Life support applications(cid:190) These products are not specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or same type number and title. For detailed information see systems where malfunction of these products can the relevant data sheet or data handbook. reasonablybeexpectedtoresultinpersonalinjury.Philips Semiconductorscustomersusingorsellingtheseproducts Limitingvaluesdefinition(cid:190) Limitingvaluesgivenarein for use in such applications do so at their own risk and accordance with the Absolute Maximum Rating System agree to fully indemnify Philips Semiconductors for any (IEC60134). Stress above one or more of the limiting damages resulting from such application. values may cause permanent damage to the device. These are stress ratings only and operation of the device Right to make changes(cid:190) Philips Semiconductors attheseoratanyotherconditionsabovethosegiveninthe reservestherighttomakechanges,withoutnotice,inthe Characteristicssectionsofthespecificationisnotimplied. products, including circuits, standard cells, and/or Exposure to limiting values for extended periods may software, described or contained herein in order to affect device reliability. improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for Application information(cid:190) Applications that are theuseofanyoftheseproducts,conveysnolicenceortitle described herein for any of these products are for under any patent, copyright, or mask work right to these illustrative purposes only. Philips Semiconductors make products,andmakesnorepresentationsorwarrantiesthat norepresentationorwarrantythatsuchapplicationswillbe these products are free from patent, copyright, or mask suitable for the specified use without further testing or work right infringement, unless otherwise specified. modification. 2001Dec11 9

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor NOTES 2001Dec11 10

Philips Semiconductors Product specification N-channel enhancement mode BSP130 vertical D-MOS transistor NOTES 2001Dec11 11

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax:+31402724825 For sales offices addresses send e-mail to:sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,isbelievedtobeaccurateandreliableandmaybechanged without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613510/03/pp12 Date of release:2001Dec11 Document order number: 939775009064

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