BSO203SP H OptiMOS® P-Power-Transistor Product Summary Features V -20 V DS • single P-Channel in SO8 R V =4.5 V 21 mΩ DS(on),max GS • Qualified according JEDEC for target applications V =2.5 V 34 GS • 150°C operating temperature I -8.9 A D • Super Logic Level (2.5V rated) • Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21 PG-DSO-8 Type Package Marking Lead free Halogen free Packing BSO203SP H PG-DSO-8 203SP Yes Yes dry Maximum ratings, at T=25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state V = -4.5 V, Continuous drain current1) ID TG=S25 °C -8.9 -7.0 A A V = -4.5 V, GS -7.1 -5.8 T =70 °C A V = -2.5 V, GS -7.0 -5.7 T =25 °C A V = -2.5 V, GS -5.6 -4.5 T =70 °C A Pulsed drain current2) ID,pulse TA=25 °C -35.6 Avalanche energy, single pulse E I =--8.9 A, R =25 Ω 97 mJ AS D GS Gate source voltage V ±12 V GS Power dissipation1) Ptot TA=25 °C 2.5 1.6 W Operating and storage temperature T, T -55 ... 150 °C j stg ESD class JESD22-A114 HBM 1B (500V - 1 kV) Soldering temperature 260 °C IEC climatic category; DIN IEC 68-1 55/150/56 Rev.1.31 page 1 2010-02-10

BSO203SP H Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 35 K/W junction - soldering point thJS Thermal resistance, minimal footprint, R - - 110 junction - ambient thJA t ≤10 s p minimal footprint, - - 150 steady state 6 cm2 cooling area1), - - 53 t ≤10 s p 6 cm2 cooling area1), - - 80 steady state Electrical characteristics, at T=25 °C, unless otherwise specified j Static characteristics V =0 V, I = - Drain-source breakdown voltage V GS D -20 - - V (BR)DSS 0.25 mA Gate threshold voltage V V =V , I = -100 µA -0.6 -0.9 -1.2 GS(th) DS GS D V = -20 V, V =0 V, Zero gate voltage drain current I DS GS - - -1 µA DSS T=25 °C j V = -20 V, V =0 V, DS GS - - -100 T=150 °C j Gate-source leakage current I V = -12 V, V =0 V - - -100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =-7 A - 22 34 mΩ DS(on) GS D V =4.5 V, I =-8.9 A - 15 21 GS D Gate resistance R - 3.3 - Ω G |V |>2|I |R , Transconductance g DS D DS(on)max 18 33 - S fs I =-7.1 A D 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.31 page 2 2010-02-10

BSO203SP H Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 2500 3750 pF iss V =0 V, V =15 V, Output capacitance C GS DS - 820 1230 oss f=1 MHz Reverse transfer capacitance C - 680 1020 rss Turn-on delay time t - 16 24 ns d(on) Rise time tr VDD= -10 V, VGS=- - 55 83 4.5 V, I =-8.9 A, R = D G Turn-off delay time td(off) 6 Ω - 45 68 Fall time t - 74 111 f Gate Charge Characteristics4) Gate to source charge Q - -4 -6 nC gs Gate charge at threshold Q - -4 -6 g(th) Gate to drain charge Qgd V = -10 V, I =-8.9 A, - -11 -17 DD D V =0 to 4.5 V Switching charge Q GS - -12 -18 sw Gate charge total Q - -26 -39 g Gate plateau voltage V - -1.6 - V plateau Output charge Q V = -10 V, V =0 V - 16 21 nC oss DD GS Reverse Diode Diode continuous forward current I - - -3 A S T =25 °C A Diode pulse current I - - -35.6 S,pulse V =0 V, I =-8.9 A, Diode forward voltage V GS F - - 1.1 V SD T=25 °C j V =10 V, I =I , Reverse recovery time t R F S - 26 39 ns rr di /dt=100 A/µs F V =10 V, I =I , Reverse recovery charge Q R F D - 14 21 nC rr di /dt=100 A/µs F 4) See figure 16 for gate charge parameter definition Rev.1.31 page 3 2010-02-10

BSO203SP H 1 Power dissipation 2 Drain current P =f(T ); t ≤10 s I =f(T ); t ≤10 s tot A p D A p parameter: V GS 3 10 9 2.5 8 7 2 6 W] A] 4.5 V [ot 1.5 [D 5 Pt -I 4 1 3 2 0.5 1 0 0 0 40 80 120 160 0 40 80 120 160 TA [°C] TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C1); D=0 Z =f(t )1) D DS A thJA p parameter: t parameter: D=t /T p p 102 102 limited by on-state resistance 0.5 10 µs 100 µs 0.2 101 0.1 1 ms 101 0.05 W] 0.02 [A]D 10 ms [K/A 100 0.01 I hJ t Z single pulse 100 DC 100 ms 10-1 10-1 10-2 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 V [V] t [s] DS p Rev.1.31 page 4 2010-02-10

BSO203SP H 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T=25 °C R =f(I ); T=25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 60 50 10 V 3 V 2.5V 45 4.5V 50 40 35 2.5 V 40 Ω] 30 m -I [A]D 30 2V [S(on) 25 3.0 V D R 20 3.5V 20 4.5 V 15 10 V 10 10 1.5V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 10 V -V [V] -I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T=25 °C D GS DS D DS(on)max fs D j parameter: T j 35 60 30 25 40 20 A] S] [-ID 15 [gfs 150 °C 20 10 25°C 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 40 -VGS [V] ID [A] Rev.1.31 page 5 2010-02-10

BSO203SP H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T); I =-8.9 A; V = -4.5 V V =f(T); V =V ; I = -100 µA DS(on) j D GS GS(th) j GS DS D 30 1.4 25 1.2 98 % 20 1 ] Ω [mS(on) 15 typ [V]GS(th) 0.8 D V R - 0.6 10 0.4 5 0.2 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 104 102 25 °C Ciss 101 150 °C 25 °C, 98% [pF] 103 Coss [A]F 150 °C, 98% C I Crss 100 102 10-1 0 10 20 30 0 0.5 1 1.5 2 -V [V] V [V] DS SD Rev.1.31 page 6 2010-02-10

BSO203SP H 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 Ω V =f(Q ); I =-8.9 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 10 9 8 7 4 V 10V 10 16 V 25 °C 6 A] 100 °C V] [AV 125 °C [GS 5 I V 4 1 3 2 1 0.1 0 1 10 100 1000 0 20 40 60 tAV [µs] -Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T); I =1 mA BR(DSS) j D 23 V GS 22.5 Q g 22 21.5 V] 21 [S) DS 20.5 R( B V V - 20 gs(th) 19.5 19 Qg(th) Qsw Qgate 18.5 Q Q 18 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev.1.31 page 7 2010-02-10

BSO203SP H Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.31 page 8 2010-02-10

BSO203SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.31 page 9 2010-02-10

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