IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection G • 2nd generation HighSpeed-Technology E for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - E optimized for I =3A PG-TO220-3-34 off C - simple Gate-Control (FullPAK) PG-TO220-3-31 (FullPAK) • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type V I E T Marking Package CE C off j,max IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-31 IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-34 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 1200 V CE Triangular collector peak current (V = 15V) I A GS Cpk T = 100°C, f = 32kHz 8.2 C Pulsed collector current, t limited by T I 9 p jmax Cpuls Turn off safe operating area - 9 V ≤ 1200V, T ≤ 150°C CE j Gate-emitter voltage V ±20 V GE Power dissipation P 29 W tot T = 25°C C Operating junction and storage temperature T , T -40...+150 °C j stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Isolation Voltage V 2500 V isol rms 1 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.2 July 06

IGA03N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 4.3 K/W thJC junction – case Thermal resistance, R 64 thJA junction – ambient Electrical Characteristic, at T = 25 °C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =300µA 1200 - - V (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =3A CE(sat) GE C T =25°C - 2.2 2.8 j T =150°C - 2.5 - j V = 10V, I =3A, GE C Tj=25°C - 2.4 - Gate-emitter threshold voltage V I =90µA,V =V 2.1 3 3.9 GE(th) C CE GE Zero gate voltage collector current I V =1200V,V =0V µA CES CE GE T =25°C - - 20 j T =150°C - - 80 j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =3A - 2 - S fs CE C Dynamic Characteristic Input capacitance C V =25V - 205 - pF iss CE Output capacitance C V =0V - 24 - oss GE Reverse transfer capacitance C f=1MHz - 7 - rss Gate charge Q V =960V, I =3A - 8.6 - nC Gate CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case Power Semiconductors 2 Rev. 2.2 July 06

IGA03N120H2 Switching Characteristic, Inductive Load, at T=25 °C j Value Parameter Symbol Conditions Unit min. Typ. max. IGBT Characteristic Turn-on delay time t T =25°C - 9.2 - ns d(on) j Rise time t V =800V, I =3A - 5.2 - r CC C Turn-off delay time td(off) VGE=0V/15V - 281 - Fall time tf RLσG2=)=8128Ω0 nH - 29 - Turn-on energy E - 0.14 - mJ on Cσ1)=40pF Turn-off energy E - 0.15 - off Energy losses include Total switching energy E “tail” and diode 2) - 0.29 - ts reverse recovery. Switching Characteristic, Inductive Load, at T=150 °C j Value Parameter Symbol Conditions Unit min. Typ. max. IGBT Characteristic Turn-on delay time t T =150°C - 9.4 - ns d(on) j Rise time t V =800V, I =3A - 6.7 - r CC C Turn-off delay time td(off) VGE=0V/15V - 340 - Fall time tf RLσG1=)=8128Ω0 nH - 63 - Turn-on energy E - 0.22 - mJ on Cσ1)=40pF Turn-off energy E - 0.26 - off Energy losses include Total switching energy E “tail” and diode3) - 0.48 - ts reverse recovery. Switching Energy ZVT, Inductive Load Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic Turn-off energy E V =800V, I =3A mJ off CC C V =0V/15V GE R =82Ω, C 1)=4nF G r T =25°C - 0.05 - j T =150°C - 0.09 - j 2 ) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E 3 ) Commutation diode from device IKP03N120H2 Power Semiconductors 3 Rev. 2.2 July 06

IGA03N120H2 12A I c 10A t =10µs p 10A 20µs T T EN 8A EN 50µs R R R R U U 1A 100µs C C R 6A TC=25°C R O O T T C C 1ms E E L T =100°C L OL 4A C OL C C 0,1A 100ms , C , C I I I 2A c DC 0A 0,01A 10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of Figure 2. Safe operating area switching frequency (D = 0, T = 25°C, T ≤ 150°C) C j (T ≤ 150°C, D = 0.5, V = 800V, j CE V = +15V/0V, R = 82Ω) GE G 30W 8A N T 6A O N TI 20W RE PA R SI CU DIS OR 4A R T E C W E O 10W LL P O P,tot , CC 2A I 0W 0A 25°C 50°C 75°C 100°C 125°C 150°C 25°C 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE TC, CASE TEMPERATURE Figure 3. Power dissipation as a function Figure 4. Collector current as a function of of case temperature case temperature (T ≤ 150°C) (V ≤ 15V, T ≤ 150°C) j GE j Power Semiconductors 4 Rev. 2.2 July 06

IGA03N120H2 10A 10A 8A 8A T V =15V T V =15V N GE N GE E E R 12V R 12V R 6A R 6A U 10V U 10V C C R 8V R 8V O O T T EC 4A 6V EC 4A 6V L L L L O O C C , C , C I 2A I 2A 0A 0A 0V 1V 2V 3V 4V 5V 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics Figure 6. Typical output characteristics (T = 25°C) (T = 150°C) j j E 12A G 3V A T L O V 10A N IC=6A O RRENT 8A Tj=+150°C TURATI 2V IC=3A U SA R C 6A Tj=+25°C ER IC=1.5A O T T T C MI E OLL 4A -RE 1V C O , C CT I 2A LE L O C 0A , at) 0V s 3V 5V 7V 9V E( -50°C 0°C 50°C 100°C 150°C C V VGE, GATE-EMITTER VOLTAGE Tj, JUNCTION TEMPERATURE Figure 7. Typical transfer characteristics Figure 8. Typical collector-emitter (V = 20V) saturation voltage as a function of junction CE temperature (V = 15V) GE Power Semiconductors 5 Rev. 2.2 July 06

IGA03N120H2 1000ns 1000ns t d(off) t d(off) MES 100ns tf MES 100ns TI TI t G G f N N HI HI C C T t T t WI 10ns d(on) WI 10ns d(on) S S t, t, t r t r 1ns 1ns 0Ω 50Ω 100Ω 150Ω 0A 2A 4A IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a Figure 10. Typical switching times as a function of collector current function of gate resistor (inductive load, T = 150°C, (inductive load, T = 150°C, j j V = 800V, V = +15V/0V, R = 82Ω, V = 800V, V = +15V/0V, I = 3A, CE GE G CE GE C dynamic test circuit in Fig.E) dynamic test circuit in Fig.E) 1000ns 5V E G t A d(off) T L O 4V V D S 100ns OL E H M t S 3V max. G TI f HRE N T HI R typ. TC t TE 2V WI 10ns d(on) MIT min. t, S -EE T 1V t A r G , h) E(t 1ns VG 0V 25°C 50°C 75°C 100°C 125°C 150°C -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage function of junction temperature as a function of junction temperature (inductive load, V = 800V, (I = 0.09mA) CE C V = +15V/0V, I = 3A, R = 82Ω, GE C G dynamic test circuit in Fig.E) Power Semiconductors 6 Rev. 2.2 July 06

IGA03N120H2 1.0mJ 1) E and E include losses 1d)u Eeo tno a dnido dEets rienccoluvdeery l.o sses E 1 0.7mJ dueo tno diodets recovery. Ets1 ts S S E E 0.6mJ S S S S O O L L Y Y 0.5mJ G G R E R NE 0.5mJ off NE E E G G 0.4mJ N N HI HI C C WIT Eon1 WIT 0.3mJ E S S off E, E, E 1 0.2mJ on 0.0mJ 0A 2A 4A 0Ω 50Ω 100Ω 150Ω 200Ω 250Ω IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses as a function of collector current as a function of gate resistor (inductive load, T = 150°C, (inductive load, T = 150°C, j j V = 800V, V = +15V/0V, R = 82Ω, V = 800V, V = +15V/0V, I = 3A, CE GE G CE GE C dynamic test circuit in Fig.E ) dynamic test circuit in Fig.E ) 0.5mJ 1d)u Eeo tno a dnido dEets rienccoluvdeery l.o sses Ets1 S 0.16mJ IC=3A, TJ=150°C S O ES 0.4mJ Y L S G OS ER 0.12mJ L N Y E G G R 0.3mJ N G ENE Eoff WITCHI 0.08mJ I=1A, T=150°C IC=3A, TJ=25°C CHIN 0.2mJ Eon1 FF S C J WIT N O 0.04mJ E, S 0.1mJ E, TURoff 0.00mJ IC=1A, TJ=25°C 0V/us 1000V/us 2000V/us 3000V/us 25°C 80°C 125°C 150°C Tj, JUNCTION TEMPERATURE dv/dt, VOLTAGE SLOPE Figure 15. Typical switching energy losses Figure 16. Typical turn off switching energy as a function of junction temperature loss for soft switching (inductive load, V = 800V, (dynamic test circuit in Fig. E) CE V = +15V/0V, I = 3A, R = 82Ω, GE C G dynamic test circuit in Fig.E ) Power Semiconductors 7 Rev. 2.2 July 06

IGA03N120H2 1nF 20V Ciss E G 15V U =240V A T CE E OL C V N 100pF R CITA TTE 10V A MI U =960V CAP C -EE CE C, oss AT G , E 5V G V 10pF C rss 0V 0nC 10nC 20nC 30nC 0V 10V 20V 30V VCE, COLLECTOR-EMITTER VOLTAGE QGE, GATE CHARGE Figure 19. Typical capacitance as a Figure 18. Typical gate charge function of collector-emitter voltage (I = 3A) C (V = 0V, f = 1MHz) GE 101K/W D=0.5 0.1 0.2 E C N A T S 100K/W SI E R R,(K/W) τ, (s) L A 1,4285 5,2404 M R 1,8838 1,7688 HE 0.05 0,4057 0,07592 NT T 10-1K/W 0.02 00,,43223441 00,,000050051985 E 0,1021 0,000126 NSI 0.01 0,1340 0,000018 A R , TJC 10-2K/W R1 R2 h Zt single pulse C1=τ1/R1 C2=τ2/R2 1µs 10µs100µs1ms 10ms100ms 1s 10s tP, PULSE WIDTH Figure 17. IGBT transient thermal impedance as a function of pulse width (D=t /T) P Power Semiconductors 8 Rev. 2.2 July 06

IGA03N120H2 PG-TO-220-3-31 (FullPAK) dimensions symbol [mm] [inch] min max min max A 10.37 10.63 0.4084 0.4184 B 15.86 16.12 0.6245 0.6345 C 0.65 0.78 0.0256 0.0306 D 2.95 typ. 0.1160 typ. E 3.15 3.25 0.124 0.128 F 6.05 6.56 0.2384 0.2584 G 13.47 13.73 0.5304 0.5404 H 3.18 3.43 0.125 0.135 K 0.45 0.63 0.0177 0.0247 L 1.23 1.36 0.0484 0.0534 M 2.54 typ. 0.100 typ. N 4.57 4.83 0.1800 0.1900 P 2.57 2.83 0.1013 0.1113 T 2.51 2.62 0.0990 0.1030 Power Semiconductors 9 Rev. 2.2 July 06

IGA03N120H2 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 12/14/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 10 Rev. 2.2 July 06

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