BSC046N10NS3 G OptiMOSTM3 Power-Transistor ProductSummary Features V 100 V DS •Verylowgatechargeforhighfrequencyapplications R 4.6 mW DS(on),max •Optimizedfordc-dcconversion I 100 A D •N-channel,normallevel PG-TDSON-8 •ExcellentgatechargexR product(FOM) DS(on) •Verylowon-resistanceR DS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Type Package Marking BSC046N10NS3 G PG-TDSON-8 046N10NS MMaaxxiimmuummrraattiinnggss,,aattTT ==2255°°CC,,uunnlleessssootthheerrwwiisseessppeecciiffiieedd j Parameter Symbol Conditions Value Unit Continuousdraincurrent I T =25°C 100 A D C T =100°C 85 C T =25°C, A 17.0 R =50K/W2) thJA Pulseddraincurrent3) ID,pulse TC=25°C 400 Avalancheenergy,singlepulse E I =50A,R =25W 350 mJ AS D GS Gatesourcevoltage V ±20 V GS Powerdissipation P T =25°C 156 W tot C Operatingandstoragetemperature T ,T -55...150 °C j stg IECclimaticcategory;DINIEC68-1 55/150/56 RReevv..22..00 ppaaggee11 22001111--0099--2299

BSC046N10NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics Thermalresistance,junction-case R - - 0.8 K/W thJC R minimalfootprint - - 62 Thermalresistance, thJA junction-ambient 6cm2coolingarea2) - - 50 Electricalcharacteristics,atT =25°C,unlessotherwisespecified j Staticcharacteristics Drain-sourcebreakdownvoltage V V =0V,I =1mA 100 - - V (BR)DSS GS D Gatethresholdvoltage V V =V ,I =120µA 2 2.7 3.5 GS(th) DS GS D V =100V,V =0V, Zerogatevoltagedraincurrent I DS GS - 0.01 1 µA DSS T =25°C j V =100V,V =0V, DS GS - 10 100 T =125°C j Gate-sourceleakagecurrent I V =20V,V =0V - 1 100 nA GSS GS DS Drain-sourceon-stateresistance R V =10V,I =50A - 4 4.6 mW DS(on) GS D V =6V,I =25A - 5.1 8.6 GS D Gateresistance R - 1.9 - W G |V |>2|I |R , Transconductance g DS D DS(on)max 48 96 - S fs I =50A D 1)J-STD20andJESD22 2)Deviceon40mmx40mmx1.5mmepoxyPCBFR4with6cm2(onelayer,70µmthick)copperareafordrain connection.PCBisverticalinstillair. 3)seefigure3 RReevv..22..00 ppaaggee22 22001111--0099--2299

BSC046N10NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamiccharacteristics Inputcapacitance C - 4500 - pF iss V =0V,V =50V, Outputcapacitance C GS DS - 790 - oss f=1MHz Reversetransfercapacitance C - 30 - rss Turn-ondelaytime t - 16 - ns d(on) Risetime tr V =50V,V =10V, - 14 - DD GS I =25A,R =1.6W Turn-offdelaytime t D G - 41 - d(off) Falltime t - 11 - f GateChargeCharacteristics4) Gatetosourcecharge Q - 20 - nC gs Gatetodraincharge Q - 11 - gd V =50V,I =50A, Switchingcharge Q DD D - 19 - sw V =0to10V GS GGaatteecchhaarrggeettoottaall QQ -- 6633 -- gg Gateplateauvoltage V - 4.4 - V plateau Outputcharge Q V =50V,V =0V - 84 - nC oss DD GS ReverseDiode Diodecontinousforwardcurrent I - - 100 A S T =25°C C Diodepulsecurrent I - - 400 S,pulse V =0V,I =50A, Diodeforwardvoltage V GS F - 1 1.2 V SD T =25°C j Reverserecoverytime trr V =50V,I =25A, - 56 - ns R F di /dt=100A/µs Reverserecoverycharge Q F - 101 - nC rr 4)Seefigure16forgatechargeparameterdefinition RReevv..22..00 ppaaggee33 22001111--0099--2299

BSC046N10NS3 G 1Powerdissipation 2Draincurrent P =f(T ) I =f(T );V ≥10 V tot C D C GS 116600 111100 110000 114400 9900 112200 8800 110000 7700 [W][W] 8800 A]A] 6600 PPtottot I[I[DD 5500 6600 4400 3300 4400 2200 2200 1100 00 00 00 4400 8800 112200 116600 00 4400 8800 112200 116600 TT [[°°CC]] TT [[°°CC]] CC CC 3Safeoperatingarea 4Max.transientthermalimpedance I =f(V );T =25°C;D=0 Z =f(t ) D DS C thJC p parameter:t parameter:D=t /T p p 103 101 1µs 10µs 102 100 100µs ] W 1ms 0.5 A] 101 K/ [ [ D DC C I J Zth 0.2 0.1 10-1 0.05 100 0.02 0.01 singlepulse 10-1 10-2 10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p RReevv..22..00 ppaaggee44 22001111--0099--2299

BSC046N10NS3 G 5Typ.outputcharacteristics 6Typ.drain-sourceonresistance I =f(V );T =25°C R =f(I );T =25°C D DS j DS(on) D j parameter:V parameter:V GS GS 112200 1122 1100VV 66VV 77VV 55VV 110000 1100 44..55VV 8800 88 ]] WW 55VV mm A]A] 6600 [[ 66 I[I[DD S(on)S(on) 66VV DD 44..55VV RR 77VV 4400 44 1100VV 2200 22 00 00 00 11 22 33 00 2200 4400 6600 8800 110000 VV [[VV]] II [[AA]] DDSS DD 7Typ.transfercharacteristics 8Typ.forwardtransconductance I =f(V );|V |>2|I |R g =f(I );T =25°C D GS DS D DS(on)max fs D j parameter:T j 140 140 120 120 100 100 80 80 A] S] [ [ ID 60 gfs 60 40 40 150°C 20 25°C 20 0 0 0 2 4 6 0 20 40 60 80 100 V [V] I [A] GS D RReevv..22..00 ppaaggee55 22001111--0099--2299

BSC046N10NS3 G 9Drain-sourceon-stateresistance 10Typ.gatethresholdvoltage R =f(T );I =50A;V =10V V =f(T );V =V DS(on) j D GS GS(th) j GS DS parameter:I D 1100 44 33..55 88 33 11220000µµAA 22..55 ]] 66 112200µµAA WW mm V]V] [[ mmaaxx [[ n)n) h)h) 22 DS(oDS(o ttyypp GS(tGS(t RR 44 VV 11..55 11 22 00..55 00 00 --6600 --2200 2200 6600 110000 114400 118800 --6600 --2200 2200 6600 110000 114400 118800 TT [[°°CC]] TT [[°°CC]] jj jj 11Typ.capacitances 12Forwardcharacteristicsofreversediode C=f(V );V =0V;f=1MHz I =f(V ) DS GS F SD parameter:T j 104 1000 Ciss Coss 103 150°C,98% 25°C 100 ] pF 102 A] [ [ C Crss IF 150°C 10 101 25°C,98% 100 1 0 20 40 60 80 0 0.5 1 1.5 2 V [V] V [V] DS SD RReevv..22..00 ppaaggee66 22001111--0099--2299

BSC046N10NS3 G 13Avalanchecharacteristics 14Typ.gatecharge I =f(t );R =25W V =f(Q );I =50Apulsed AS AV GS GS gate D parameter:T parameter:V j(start) DD 110000 1100 5500VV 2200VV 8800VV 88 2255°°CC 110000°°CC 66 A]A] V]V] [[ 1100 [[ IIASAS 112255°°CC VVGSGS 44 22 11 00 11 1100 110000 11000000 00 1100 2200 3300 4400 5500 6600 7700 tt [[µµss]] QQ [[nnCC]] AAVV ggaattee 15Drain-sourcebreakdownvoltage 16Gatechargewaveforms V =f(T );I =1mA BR(DSS) j D 110 V GS Q g 105 V] [ SS) 100 D R( VB Vgs(th) 95 Qg(th) Qsw Qgate Q Q 90 gs gd -60 -40 -20 0 20 40 60 80 100 120 140 160 T [°C] j RReevv..22..00 ppaaggee77 22001111--0099--2299

BSC046N10NS3 G PackageOutline:PG-TDSON-8(SuperSO8) RReevv..22..00 ppaaggee88 22001111--0099--2299

BSC046N10NS3 G Dimensionsinmm RReevv..22..00 ppaaggee99 22001111--0099--2299

BSC046N10NS3 G Publishedby InfineonTechnologiesAG 81726Munich,Germany ©2011InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeof conditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypical valuesstatedhereinand/oranyinformationregardingtheapplicationofthedevice, InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, iinncclluuddiinnggwwiitthhoouuttlliimmiittaattiioonn,,wwaarrrraannttiieessooffnnoonn--iinnffrriinnggeemmeennttooffiinntteelllleeccttuuaallpprrooppeerrttyyrriigghhttss ofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,please contactthenearestInfineonTechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformation onthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice. InfineonTechnologiescomponentsmaybeusedinlife-supportdevicesorsystemsonlywith theexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscan reasonablybeexpectedtocausethefailureofthatlife-supportdeviceorsystemortoaffect thesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuser orotherpersonsmaybeendangered. RReevv..22..00 ppaaggee1100 22001111--0099--2299