TDSON-8FL(enlargedsourceinterconnection) BSC014N04LS MOSFET OptiMOSTMPower-MOSFET,40V 8 7 Features 6 5 •Optimizedforsynchronousrectification •Verylowon-stateresistanceR DS(on) 1 5 •100%avalanchetested 2 6 3 7 •Superiorthermalresistance 4 8 •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications 4 •Pb-freeleadplating;RoHScompliant 3 2 •Halogen-freeaccordingtoIEC61249-2-21 1 •Highersolderjointreliabilityduetoenlargedsourceinterconnection S1 8D Table1KeyPerformanceParameters S2 7D Parameter Value Unit V 40 V S3 6D DS R 1.4 mW G4 5D DS(on),max I 100 A D Q 54 nC oss Q (0V..10V) 61 nC g Type/OrderingCode Package Marking RelatedLinks BSC014N04LS TDSON-8 FL 014N04LS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2016-05-04

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 OptiMOSTMPower-MOSFET,40V BSC014N04LS Final Data Sheet 2 Rev.2.4,2016-05-04

1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Continuous drain current ID ----- ----- 11113000020000 A VVVVVGGGGGSSSSS=====1144100..055VVVVV,,,,,TTTTTCCACC=====22121550500°°0°CC°C°C,CRthJA=50K/W1) Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche current, single pulse3) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 170 mJ ID=50A,RGS=25W Gate source voltage VGS -20 - 20 V - Power dissipation Ptot -- -- 926.5 W TTCA==2255°°CC,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IDEICN cIElimC a6t8ic- 1c:a 5te5g/1o5ry0;/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Tbohtetormmal resistance, junction - case, RthJC - 0.8 1.3 K/W - Ttohpermal resistance, junction - case, RthJC - - 20 K/W - D6 ecvmic2e c ooonl iPnCg Ba,rea1) RthJA - - 50 K/W - OptiMOSTMPower-MOSFET,40V 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain c23))o SSneeneee cDDtiiioaangg.rr aaPmmC B31 3ifso f rov rem rmoticroear eld iednte asttialielill dea diirn .ifnofromrmataiotinon BSC014N04LS Final Data Sheet 3 Rev.2.4,2016-05-04

3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS -- 01.01 1100 µA VVDDSS==4400VV,,VVGGSS==00VV,,TTjj==21525°C°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 11..51 11..94 mW VVGGSS==41.05VV,,IIDD==5500AA Gate resistance1) RG 0.45 0.9 1.8 W - Transconductance gfs 120 230 - S |VDS|>2|ID|RDS(on)max,ID=50A Table5Dynamiccharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Input capacitance1) Ciss - 4300 6020 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 1200 1680 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 100 200 pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 8 - ns VRDGD,e=xt2,e0xVt=,1V.6GSW=10V,ID=50A, Rise time tr - 9 - ns VRDGD,e=xt2,e0xVt=,1V.6GSW=10V,ID=50A, Turn-off delay time td(off) - 35 - ns VRDGD,e=xt2,e0xVt=,1V.6GSW=10V,ID=50A, Fall time tf - 7 - ns VRDGD,e=xt2,e0xVt=,1V.6GSW=10V,ID=50A, Table6Gatechargecharacteristics2) Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Gate to source charge Qgs - 11 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge at threshold Qg(th) - 6.9 - nC VDD=20V,ID=50A,VGS=0to10V Gate to drain charge1) Qgd - 9.8 14 nC VDD=20V,ID=50A,VGS=0to10V Switching charge Qsw - 14 - nC VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 61 85 nC VDD=20V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 2.5 - V VDD=20V,ID=50A,VGS=0to10V Gate charge total1) Qg - 31 44 nC VDD=20V,ID=50A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 24 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 54 76 nC VDD=20V,VGS=0V OptiMOSTMPower-MOSFET,40V 12)) DSeeefin †eGda btey cdheasriggen .w Naovte sfourbmjesc†t ftoor ppraordaumcteiotenr tdeesftinition BSC014N04LS Final Data Sheet 4 Rev.2.4,2016-05-04

Table7Reversediode Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Diode continuous forward current IS - - 96 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.82 1 V VGS=0V,IF=50A,Tj=25°C Reverse recovery time1) trr - 32 64 ns VR=20V,IF=50A,diF/dt=400A/µs Reverse recovery charge Qrr - 98 - nC VR=20V,IF=50A,diF/dt=400A/µs OptiMOSTMPower-MOSFET,40V 1) Defined by design. Not subject to production test BSC014N04LS Final Data Sheet 5 Rev.2.4,2016-05-04

4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation P[W]tot TC[°C] OptiMOSTMPower-MOSFET,40V BSC014N04LS Diagram2:Draincurrent 120 120 100 100 80 80 A] 60 [D 60 I 40 40 20 20 0 0 0 40 80 120 160 0 40 80 120 160 T [°C] C P =f(T ) I =f(T );V ‡ 10V tot C D C GS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 103 101 1 µs 10 µs 102 100 µs 100 0.5 0.2 1 ms W] 0.1 I[A]D 101 DC10 ms Z[K/thJC 10-1 00.0.025 0.01 single pulse 100 10-2 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p I =f(V );T =25°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC p p Final Data Sheet 6 Rev.2.4,2016-05-04

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] OptiMOSTMPower-MOSFET,40V BSC014N04LS Diagram6:Typ.drain-sourceonresistance 400 3.0 5 V 4.5 V 10 V 350 4 V 2.8 V 3.5 V 2.5 300 3.2 V 3 V 250 2.0 ] 3.2 V Wm 3 V 200 [n) 3.5 V o S( RD 1.5 4 V 150 4.5 V 2.8 V 5 V 100 10 V 1.0 50 0 0.5 0 1 2 0 10 20 30 40 50 I [A] D I =f(V );T=25°C;parameter:V R =f(I );T=25°C;parameter:V D DS j GS DS(on) D j GS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 A] S] I[D g[fs 160 160 80 80 150 °C 25 °C 0 0 0 1 2 3 4 5 0 20 40 60 80 100 V [V] I [A] GS D I =f(V );|V |>2|I |R ;parameter:T g =f(I );T=25°C D GS DS D DS(on)max j fs D j Final Data Sheet 7 Rev.2.4,2016-05-04

Diagram9:Drain-sourceon-stateresistance ] WR[mDS(on) Tj[°C] OptiMOSTMPower-MOSFET,40V BSC014N04LS Diagram10:Typ.gatethresholdvoltage 2.50 2.5 2.25 2.00 2.0 1.75 max 1.50 1.5 250 µA V] 1.25 typ [S(th) G V 1.00 1.0 0.75 0.50 0.5 0.25 0.00 0.0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T[°C] j R =f(T);I =50A;V =10V V =f(T);V =V ;I =250µA DS(on) j D GS GS(th) j GS DS D Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 104 103 25 °C Ciss 150 °C 25 °C, max 150 °C, max Coss 103 102 pF] A] C[ I[F Crss 102 101 101 100 0 10 20 30 40 0.0 0.5 1.0 1.5 V [V] V [V] DS SD C=f(V );V =0V;f=1MHz I =f(V );parameter:T DS GS F SD j Final Data Sheet 8 Rev.2.4,2016-05-04

Diagram13:Avalanchecharacteristics I[A]AV tAV[µs] OptiMOSTMPower-MOSFET,40V BSC014N04LS Diagram14:Typ.gatecharge 102 12 20 V 10 8 V 32 V 25 °C 100 °C 8 125 °C V] 101 [S 6 G V 4 2 100 0 100 101 102 103 0 20 40 60 Q [nC] gate I =f(t );R =25W ;parameter:T V =f(Q );I =50Apulsed;parameter:V AS AV GS j(start) GS gate D DD Diagram15:Drain-sourcebreakdownvoltage 46 44 42 40 V] [S) 38 S D R( B V 36 34 32 30 -60 -20 20 60 100 140 T[°C] j V =f(T);I =1mA BR(DSS) j D Final Data Sheet 9 Rev.2.4,2016-05-04

5PackageOutlines OptiMOSTMPower-MOSFET,40V BSC014N04LS Figure1OutlineTDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.4,2016-05-04

OptiMOSTMPower-MOSFET,40V BSC014N04LS   Figure2OutlineFootprint(TDSON-8FL) Final Data Sheet 11 Rev.2.4,2016-05-04

OptiMOSTMPower-MOSFET,40V BSC014N04LS Figure3OutlineTape(TDSON-8FL) Final Data Sheet 12 Rev.2.4,2016-05-04

RevisionHistory BSC014N04LS Revision:2016-05-04,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-10-11 Release of final version 2.1 2012-10-12 New diagram titles. 2.2 2013-02-27 Rev. 2.1 2.4 2016-05-04 Update footnotes and insert max values TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. OptiMOSTMPower-MOSFET,40V BSC014N04LS Final Data Sheet 13 Rev.2.4,2016-05-04

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