SuperSO8 BSC010NE2LSI MOSFET OptiMOSTMPower-MOSFET,25V 8 5 Features 7 6 6 5 7 8 •OptimizedforhighperformanceBuckconverter •MonolithicintegratedSchottkylikediode •Verylowon-resistanceR @V =4.5V DS(on) GS •100%avalanchetested •N-channel 1 4 •QualifiedaccordingtoJEDEC1)fortargetapplications 2 3 2 3 1 •Pb-freeleadplating;RoHScompliant 4 •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters S1 8D Parameter Value Unit S2 7D V 25 V DS S3 6D R 1.05 mW DS(on),max G4 5D I 100 A D Q 38 nC OSS Q (0V..10V) 59 nC G Type/OrderingCode Package Marking RelatedLinks BSC010NE2LSI PG-TDSON-8 010NE2LI - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2016-01-29

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Final Data Sheet 2 Rev.2.4,2016-01-29

1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Continuous drain current ID ----- ----- 11113000080000 A VVVVVGGGGGSSSSS=====1144100..055VVVVV,,,,,TTTTTCCACC=====22121550500°°0°CC°C°C,CRthJA=50K/W1) Pulsed drain current2) ID,pulse - - 400 A TC=25°C Avalanche current, single pulse3) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 100 mJ ID=50A,RGS=25W Gate source voltage VGS -20 - 20 V - Power dissipation Ptot -- -- 926.5 W TTCA==2255°°CC,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IDEICN cIElimC a6t8ic- 1c:a 5te5g/1o5ry0;/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Tbohtetormmal resistance, junction - case, RthJC - - 1.3 K/W - Ttohpermal resistance, junction - case, RthJC - - 20 K/W - Device on PCB RthJA - - 50 K/W 6 cm2 cooling area1) OptiMOSTMPower-MOSFET,25V 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain c23))o SSneeneee cffiitggiouunrree. P31C 3fBo fro irsm mvoeroerrt eidc edatel aitniale isldeti dliln iafnoifrro.mrmataiotinon BSC010NE2LSI Final Data Sheet 3 Rev.2.4,2016-01-29

3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA Bcoreeaffkicdieonwtn voltage temperature dV(BR)DSS/dTj- 15 - mV/KID=10mA,referencedto25°C Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS -- -3 0-.5 mA VVDDSS==2200VV,,VVGGSS==00VV,,TTjj==21525°C°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 10..19 11..405 mW VVGGSS==41.05VV,,IIDD==3300AA Gate resistance RG 0.3 0.6 1.2 W - Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=30A Table5Dynamiccharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Input capacitance Ciss - 4200 5600 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1800 2400 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 180 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 6.3 - ns VRDGD,e=xt1=21.V6,WVGS=10V,ID=30A, Rise time tr - 6.2 - ns VRDGD,e=xt1=21.V6,WVGS=10V,ID=30A, Turn-off delay time td(off) - 32 - ns VRDGD,e=xt1=21.V6,WVGS=10V,ID=30A, Fall time tf - 4.6 - ns VRDGD,e=xt1=21.V6,WVGS=10V,ID=30A, Table6Gatechargecharacteristics1) Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Gate to source charge Qgs - 10 13 nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 6.7 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 6.9 10 nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 10 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 29 39 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 59 78 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 25 - nC VDS=0.1V,VGS=0to4.5V OptiMOSTMPower-MOSFET,25V Output charge Qoss - 38 51 nC VDD=12V,VGS=0V 1) See †Gate charge waveforms† for parameter definition BSC010NE2LSI Final Data Sheet 4 Rev.2.4,2016-01-29

Table7Reversediode Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Diode continuous forward current IS - - 96 A TC=25°C Diode pulse current IS,pulse - - 400 A TC=25°C Diode forward voltage VSD - 0.56 0.7 V VGS=0V,IF=12A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=12A,diF/dt=400A/µs OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Final Data Sheet 5 Rev.2.4,2016-01-29

4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation P[W]tot TC[°C] OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram2:Draincurrent 120 120 100 100 80 80 A] 60 [D 60 I 40 40 20 20 0 0 0 40 80 120 160 0 40 80 120 160 T [°C] C P =f(T ) I =f(T );V ‡ 10V tot C D C GS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 103 101 1 µs 10 µs 100 µs 102 100 0.5 1 ms 0.2 10 ms W] 0.1 I[A]D 101 DC [K/JC 10-1 0.05 Zth 0.02 0.01 single pulse 100 10-2 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p I =f(V );T =25°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC p p Final Data Sheet 6 Rev.2.4,2016-01-29

Diagram5:Typ.outputcharacteristics I[A]D VDS[V] OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram6:Typ.drain-sourceonresistance 800 2.0 5 V 10 V 4.5 V 3.2 V 700 4 V 3.5 V 600 1.5 4 V 500 4.5 V ] 5 V 3.5 V Wm 400 [n) 1.0 7 V 8 V S(o 10 V D R 300 3.2 V 200 3 V 0.5 2.8 V 100 0 0.0 0 1 2 3 0 10 20 30 40 50 I [A] D I =f(V );T=25°C;parameter:V R =f(I );T=25°C;parameter:V D DS j GS DS(on) D j GS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 400 320 320 240 240 A] S] I[D g[fs 160 160 150 °C 25 °C 80 80 0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D I =f(V );|V |>2|I |R ;parameter:T g =f(I );T=25°C D GS DS D DS(on)max j fs D j Final Data Sheet 7 Rev.2.4,2016-01-29

Diagram9:Drain-sourceon-stateresistance ] WR[mDS(on) Tj[°C] OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 10 mA 2.0 1.5 V] 1.5 [h) S(t G V 1.0 1.0 typ 0.5 0.5 0.0 0.0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T[°C] j R =f(T);I =30A;V =10V V =f(T);V =V DS(on) j D GS GS(th) j GS DS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 104 103 -55 °C 25 °C 125 °C Ciss 150 °C 102 Coss C[pF] 103 I[A]F 101 100 Crss 102 10-1 0 5 10 15 20 25 0.0 0.4 0.8 1.2 V [V] V [V] DS SD C=f(V );V =0V;f=1MHz I =f(V );parameter:T DS GS F SD j Final Data Sheet 8 Rev.2.4,2016-01-29

Diagram13:Avalanchecharacteristics I[A]AV tAV[µs] OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Diagram14:Typ.gatecharge 102 12 12 V 10 5 V 25 °C 20 V 100 °C 8 125 °C V] 101 [S 6 G V 4 2 100 0 100 101 102 103 0 10 20 30 40 50 60 70 Q [nC] gate I =f(t );R =25W ;parameter:T V =f(Q );I =30Apulsed;parameter:V AS AV GS j(start) GS gate D DD Diagram15:Typ.drain-sourceleakagecurrent 10-2 125 °C 10-3 100 °C 75 °C A] [S 10-4 S D I 10-5 25 °C 10-6 0 5 10 15 20 V [V] SD I =f(V );V =0V;parameter:T DSS DS GS j Final Data Sheet 9 Rev.2.4,2016-01-29

5PackageOutlines OptiMOSTMPower-MOSFET,25V BSC010NE2LSI   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.4,2016-01-29

OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Figure2OutlineTape(TDSON-8) Dimension in mm Final Data Sheet 11 Rev.2.4,2016-01-29

RevisionHistory BSC010NE2LSI Revision:2016-01-29,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2014-03-03 Release of Final Version 2.4 2016-01-29 Update "Operating temperature" TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. OptiMOSTMPower-MOSFET,25V BSC010NE2LSI Final Data Sheet 12 Rev.2.4,2016-01-29

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