BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features V 25 V DS • Optimized for e-fuse and ORing application R 0.9 mW DS(on),max • Very low on-resistance R @ V =4.5 V DS(on) GS I 100 A D • 100% avalanche tested Q 38 nC OSS • Superior thermal resistance Q (0V..10V) 126 nC G • N-channel • Qualified according to JEDEC1) for target applications PG-TDSON-8 • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSC009NE2LS PG-TDSON-8 009NE2LS Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I V =10 V, T =25 °C 100 A D GS C V =10 V, T =100 °C 100 GS C V =4.5 V, T =25 °C 100 GS C V =4.5 V, GS 100 T =100 °C C V =10 V, T =25 °C, GS A 41 R =50 K/W2) thJA Pulsed drain current3) ID,pulse TC=25 °C 820 Avalanche current, single pulse4) IAS TC=25 °C 50 Avalanche energy, single pulse E I =50 A, R =25 W 190 mJ AS D GS Gate source voltage V ±20 V GS 1) J-STD20 and JESD22 Rev. 2.3 page 1 2013-04-26

BSC009NE2LS Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Power dissipation P T =25 °C 96 W tot C T =25 °C, A 2.5 R =50 K/W2) thJA Operating and storage temperature T , T -55 ... 150 °C j stg IEC climatic category; DIN IEC 68-1 55/150/56 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 1.3 K/W thJC top - - 20 Device on PCB RthJA 6 cm2 cooling area2) - - 50 Electrical characteristics, at T =25 °C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 25 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =250 µA 1 - 2.2 GS(th) DS GS D V =25 V, V =0 V, Zero gate voltage drain current I DS GS - 0.1 10 µA DSS T =25 °C j V =25 V, V =0 V, DS GS - 10 100 T =125 °C j Gate-source leakage current I V =20 V, V =0 V - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =30 A - 1.0 1.2 mW DS(on) GS D V =10 V, I =30 A - 0.75 0.9 GS D Gate resistance R 0.4 0.8 1.6 W G |V |>2|I |R , Transconductance g DS D DS(on)max 85 170 - S fs I =30 A D 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.3 page 2 2013-04-26

BSC009NE2LS Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C - 5800 7714 pF iss V =0 V, V =12 V, Output capacitance C GS DS - 1900 2527 oss f=1 MHz Reverse transfer capacitance C - 1700 - rss Turn-on delay time t - 10 - ns d(on) Rise time tr V =12 V, V =10 V, - 33 - DD GS I =30 A, R =1.6 W Turn-off delay time t D G,ext - 48 - d(off) Fall time t - 19 - f Gate Charge Characteristics5) Gate to source charge Q - 14 19 nC gs Gate charge at threshold Q - 9 - g(th) Gate to drain charge Qgd V =12 V, I =30 A, - 37 56 DD D V =0 to 4.5 V Switching charge Q GS - 41 - sw Gate charge total Q - 72 96 g Gate plateau voltage V - 2.3 - V plateau V =12 V, I =30 A, Gate charge total Q DD D - 126 168 nC g V =0 to 10 V GS V =0.1 V, Gate charge total, sync. FET Q DS - 43 - g(sync) V =0 to 4.5 V GS Output charge Q V =12 V, V =0 V - 38 51 oss DD GS Reverse Diode Diode continuous forward current I - - 100 A S T =25 °C C Diode pulse current I - - 820 S,pulse V =0 V, I =30 A, Diode forward voltage V GS F - 0.8 1 V SD T =25 °C j V =15 V, I =I , Reverse recovery charge Q R F S - 20 - nC rr di /dt=400 A/µs F 4) See figure 13 for more detailed information 5) See figure 16 for gate charge parameter definition Rev. 2.3 page 3 2013-04-26

BSC009NE2LS 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ≥10 V tot C D C GS 120 120 100 100 80 80 ] P [Wtot 60 I [A] D 60 40 40 20 20 0 0 0 40 80 120 160 0 40 80 120 160 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I =f(V ); T =25 °C; D=0 Z =f(t ) D DS C thJC p parameter: t parameter: D=t /T p p limited by on-state 103 resistance 101 1 µs 10 µs 100 µs 102 100 0.5 1 ms 0.2 A] 101 10 ms K/W] 10-1 0.1 [D DC [C 0.05 I J h Zt 0.02 0.01 100 10-2 single pulse 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p Rev. 2.3 page 4 2013-04-26

BSC009NE2LS 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V parameter: V GS GS 800 2 4.5 V 10 V 5 V 700 4 V 600 1.5 3.2 V 3.5 V 500 3.5 V ] W m 4 V I [A] D 400 [S(on) 1 45.5 V V D 3.2 V R 7 V 8 V 300 10 V 3 V 200 0.5 2.8 V 100 0 0 0 1 2 3 0 10 20 30 40 50 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I =f(V ); |V |>2|I |R g =f(I ); T =25 °C D GS DS D DS(on)max fs D j parameter: T j 400 400 320 320 240 240 A] S] I [D g [fs 160 160 80 80 150 °C 25 °C 0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D Rev. 2.3 page 5 2013-04-26

BSC009NE2LS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R =f(T ); I =30 A; V =10 V V =f(T ); V =V ; I =250 µA DS(on) j D GS GS(th) j GS DS D 3 2.5 2.5 2 2 ] W 1.5 250 µA m V] [n) 1.5 [h) RDS(o VGS(t 1 1 typ 0.5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(V ); V =0 V; f=1 MHz I =f(V ) DS GS F SD parameter: T j 104 10000 1000 Ciss 25 °C Coss 100 150 °C Crss pF] 103 1000 A] C [ I [F 10 102 100 1 0 5 10 15 20 25 0.0 0.5 1.0 1.5 V [V] V [V] DS SD Rev. 2.3 page 6 2013-04-26

BSC009NE2LS 13 Avalanche characteristics 14 Typ. gate charge I =f(t ); R =25 W V =f(Q ); I =30 A pulsed AS AV GS GS gate D parameter: T parameter: V j(start) DD 100 12 5 V 12 V 10 25 °C 20 V 100 °C 8 125 °C [A] V 10 [V] GS 6 A V I 4 2 1 0 1 10 100 1000 0 20 40 60 80 100 120 140 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms V =f(T ); I =1 mA BR(DSS) j D 28 V GS 27 Q g 26 25 V] [S) 24 S D R( VB Vgs(th) 23 22 21 Qg(th) Qsw Qgate Q Q 20 gs gd -60 -20 20 60 100 140 180 T [°C] j Rev. 2.3 page 7 2013-04-26

BSC009NE2LS Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 2.3 page 8 2013-04-26

BSC009NE2LS Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 2.3 page 9 2013-04-26

BSC009NE2LS Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 10 2013-04-26

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