BS108 Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N−Channel TO−92 http://onsemi.com This MOSFET is designed for high voltage, high speed switching 250 mAMPS applications such as line drivers, relay drivers, CMOS logic, 200 VOLTS microprocessor or TTL to high voltage interface and high voltage display drivers. R = 8 (cid:3) DS(on) Features • N−Channel Low Drive Requirement, V = 3.0 V max GS • D Inherent Current Sharing Capability Permits Easy Paralleling of many Devices • AEC Qualified • PPAP Capable G • This is a Pb−Free Device* S MAXIMUM RATINGS Rating Symbol Value Unit MARKING Drain−Source Voltage VDSS 200 Vdc DIAGRAM Gate−Source Voltage VGS ±20 Vdc Drain Current mAdc A Continuous (Note 1) ID 250 BS108 Pulsed (Note 2) IDM 500 YWW(cid:2) TO−92 (cid:2) Total Power Dissipation PD 1 CASE 29−11 @ TA = 25°C 350 mW 2 STYLE 30 Derate above TA = 25°C 6.4 mW/°C 3 Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum BS108 = Device Code Ratings are stress ratings only. Functional operation above the Recommended A = Assembly Location Operating Conditions is not implied. Extended exposure to stresses above the Y = Year Recommended Operating Conditions may affect device reliability. WW = Work Week 1. The Power Dissipation of the package may result in a lower continuous drain current. (cid:2) = Pb−Free Package 2. Pulse Test: Pulse Width (cid:2) 300 (cid:2)s, Duty Cycle (cid:2) 2.0%. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BS108ZL1G TO−92 2000/Ammo Pack (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: April, 2011 − Rev. 4 BS108/D

BS108 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage V(BR)DS − Vdc (VGS = 0, ID = 10 (cid:2)A) 200 − − Zero Gate Voltage Drain Current IDSS nAdc (VDSS = 130 Vdc, VGS = 0) − − 30 Gate−Body Leakage Current IGSSF nAdc (VGS = 15 Vdc, VDS = 0) − − 10 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) Vdc (ID = 1.0 mA, VDS = VGS) 0.5 − 1.5 Static Drain−to−Source On−Resistance rDS(on) (cid:3) (VGS = 2.0 Vdc, ID = 50 mA) − − 10 (VGS = 2.8 Vdc, ID = 100 mA) − − 8.0 Drain Cutoff Current IDSX (cid:2)A (VGS = 0.2 V, VDS = 70 V) − − 25 Forward Transconductance gFS Mhos (ID = 120 mA, VDS = 20 V) − 0.33 − DYNAMIC CHARACTERISTICS Input Capacitance Ciss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 150 Output Capacitance Coss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 30 Reverse Transfer Capacitance Crss pF (VDS = 25 V, VGS = 0, f = 1.0 MHz) − − 10 SWITCHING CHARACTERISTICS Turn−On Time (See Figure 1) td(on) − − 15 ns Turn−Off Time (See Figure 1) td(off) − − 15 ns 3. Pulse Test: Pulse Width ≤300 (cid:2)s, Duty Cycle =2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE ton toff 23 50 (cid:3) INPUT PULSE GENERATOR Vin 50 (cid:3) AT2T0 EdNBUATOR Vout 90% 90% 40 pF 50 OUTPUT 10% 50 1.0 M INVERTED Vout 90% 10 V 50% PULSE 50% WIDTH INPUT Vin 10% Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2

BS108 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A NOTES: B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI BULK PACK Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. R 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND P BEYOND DIMENSION K MINIMUM. L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 X X D G 0.045 0.055 1.15 1.39 G H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 H J K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- V C N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 SECTION X−X R 0.115 --- 2.93 --- 1 N V 0.135 --- 3.43 --- N R A B BENT LEAD N1O.TEDSIM:ENSIONING AND TOLERANCING PER TAPE & REEL ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. AMMO PACK 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P P AND BEYOND DIMENSION K MINIMUM. T MILLIMETERS SPELAATNIENG K DIM MIN MAX A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 STYLE 30: X X D G 2.40 2.80 PIN 1. DRAIN G KJ 120..7309 0-.-5-0 23.. GSOATUERCE J N 2.04 2.66 V P 1.50 4.00 C R 2.93 --- V 3.43 --- SECTION X−X 1 N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5773−3850 Sales Representative http://onsemi.com BS108/D 3