Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (E9087) BPW34 BPW34S BPW34S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich (cid:127) Especially suitable for applications from von 400 nm bis 1100 nm 400 nm to 1100 nm (cid:127) Kurze Schaltzeit (typ. 20 ns) (cid:127) Short switching time (typ. 20 ns) (cid:127) DIL-Plastikbauform mit hoher Packungsdichte (cid:127) DIL plastic package with high packing density (cid:127) BPW 34 S/(E9087): geeignet für Vapor-Phase (cid:127) BPW 34 S/(E9087): suitable for vapor-phase Löten und IR-Reflow Löten (JEDEC level 4) and IR-reflow soldering (JEDEC level 4) Anwendungen Applications (cid:127) Lichtschranken für Gleich- und (cid:127) Photointerrupters Wechsellichtbetrieb (cid:127) IR remote controls (cid:127) IR-Fernsteuerungen (cid:127) Industrial electronics (cid:127) Industrieelektronik (cid:127) For control and drive circuits (cid:127) „Messen/Steuern/Regeln“ Typ Bestellnummer Type Ordering Code BPW 34 Q62702-P73 BPW 34 S Q62702-P1602 BPW 34 S (E9087) Q62702-P1790 2003-02-04 1

BPW 34, BPW 34 S, BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit BPW 34 S BPW 34 BPW 34 S (E9087) Betriebs- und Lagertemperatur T ; T – 40 … + 100 – 40 … + 85 °C op stg Operating and storage temperature range Sperrspannung V 32 V R Reverse voltage Verlustleistung, T = 25 °C P 150 mW A tot Total power dissipation Kennwerte (T = 25 °C, Normlicht A, T = 2856 K) A Characteristics (T = 25 °C, standard light A, T = 2856 K) A Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Fotoempfindlichkeit, V = 5 V S 80 (≥ 50) nA/Ix R Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit λ 850 nm S max2003-02-04 Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit λ 400 … 1100 nm S = 10% von S max Spectral range of sensitivity S = 10% of S max Bestrahlungsempfindliche Fläche A 7.00 mm2 Radiant sensitive area Abmessung der bestrahlungsempfindlichen L × B 2.65 × 2.65 mm × mm Fläche Dimensions of radiant sensitive area L × W Halbwinkel ϕ ± 60 Grad Half angle deg. Dunkelstrom, V = 10 V I 2 (≤ 30) nA R R Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm S 0.62 A/W λ Spectral sensitivity Quantenausbeute, λ = 850 nm η 0.90 Electrons Quantum yield Photon 2003-02-04 2

BPW 34, BPW 34 S, BPW 34 S (E9087) Kennwerte (T = 25 °C, Normlicht A, T = 2856 K) A Characteristics (T = 25 °C, standard light A, T = 2856 K) (cont’d) A Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Leerlaufspannung, E = 1000 Ix V 365 (≥ 300) mV v O Open-circuit voltage Kurzschlußstrom, E = 1000 Ix I 80 µA v SC Short-circuit current Anstiegs- und Abfallzeit des Fotostromes t, t 20 ns r f Rise and fall time of the photocurrent R = 50 Ω; V = 5 V; λ = 850 nm; I = 800 µA L R p Durchlaßspannung, I = 100 mA, E = 0 V 1.3 V F F Forward voltage Kapazität, V = 0 V, f = 1 MHz, E = 0 C 72 pF R 0 Capacitance Temperaturkoeffizient von V TC – 2.6 mV/K O V Temperature coefficient of V O Temperaturkoeffizient von I TC 0.18 %/K SC I Temperature coefficient of I SC Rauschäquivalente Strahlungsleistung NEP 4.1 × 10– 14 W ------------ Noise equivalent power Hz V = 10 V, λ = 850 nm R Nachweisgrenze, V = 10 V, λ = 850 nm D* 6.6 × 1012 R cm× Hz Detection limit -------------------------- W 2003-02-04 3

BPW 34, BPW 34 S, BPW 34 S (E9087) Relative Spectral Sensitivity Photocurrent I = f (E ), V = 5 V Total Power Dissipation P v R S = f (λ) Open-Circuit Voltage V = f (E ) P = f (T ) rel O v tot A 100 OHF00078 103 OHF01066104 160 OHF00958 µA mV mW Srel % ΙP VO Ptot140 80 102 103 120 V O 100 60 101 102 80 Ι P 40 60 100 101 40 20 20 0 10-1 100 0 400 500 600 700 800 900 nm 1100 100 101 102 103 lx 104 0 20 40 60 80 ˚C 100 λ EV TA Dark Current Capacitance Dark Current I = f (V ), E = 0 C = f (V ), f = 1 MHz, E = 0 I = f (T ), V = 10 V, E = 0 R R R R A R 4000 OHF00080 100 OHF00081 103 OHF00082 ΙR pA C pF ΙR nA 80 3000 102 70 60 2000 50 101 40 30 1000 100 20 10 0 0 10-1 0 5 10 15 V 20 10-2 10-1 100 101 V 102 0 20 40 60 80 ˚C 100 VR VR TA Directional Characteristics S = f (ϕ) rel 40 30 20 10 0 OHF01402 ϕ 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 2003-02-04 4

BPW 34, BPW 34 S, BPW 34 S (E9087) Maßzeichnung Package Outlines BPW34 5.4 (0.213) Cathode marking 4.9 (0.193) 4.0 (0.157) 4.5 (0.177) Chip position 3.7 (0.146) 4.3 (0.169) 0.6 (0.024) 0.4 (0.016) 2 (0.047)7 (0.028) 0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075) 1.0. 0.6 (0.024) 0.6 (0.024) 8) 8) 3 1 1 1 0.4 (0.016) 0.4 (0.016) 0. 0. 0.5 (0.020) 0.35 (0.014) 3.5 ( 3.0 ( 0.3 (0.012) 0.2 (0.008) 0.8 (0.031) 0 ... 5˚ 0.6 (0.024) 1)5) 75 00 0.0. 1.8 (1.4 ( 5.08 (0.200) spacing Photosensitive area 2.65 (0.104) x 2.65 (0.104) GEOY6643 BPW34S Chip position 7)3) 2) 44 1 1.1 (0.043) 1.2 (0.01.1 (0.0 0...0.1(0...0.004) 0.3 (0.0 0.9 (0.035) 5˚ 08) 04) 6.7 (0.264) 0... 0.0 0.0 6.2 (0.244) 2 ( 1 ( 0. 0. 4.5 (0.177) 4.3 (0.169) 1.8 (0.071)±0.2 (0.008) 7)6) 54 0.9 (0.035)0.7 (0.028) 1.7 (0.067)1.5 (0.059) 4.0 (0.13.7 (0.1 Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6863 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2003-02-04 5

BPW 34, BPW 34 S, BPW 34 S (E9087) BPW34S (E9087) Chip position 7)3) 4) 2) 1.1 (0.043) 1.2 (0.041.1 (0.04 0...0.1(0...0.00 0.3 (0.01 0.9 (0.035) 5˚ 8) 4) 0... 0.00 0.00 6.7 (0.264) 2 ( 1 ( 0. 0. 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.8 (0.071)±0.2 (0.008) 7)6) 54 0.9 (0.035)0.7 (0.028) 1.7 (0.067)1.5 (0.059) 4.0 (0.13.7 (0.1 Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104) GEOY6916 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-02-04 6