BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 5 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 100W LDMOS power transistor for base station applications at frequencies from 2300MHz to 2400MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a common source class-AB production test circuit. case Mode of operation f I V P G  ACPR ACPR Dq DS L(AV) p D 885k 5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300to2400 900 28 20 18 27 46[1] - 1 carrier W-CDMA 2300to2400 900 28 30 18.7 33 - 40[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01% probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84MHz. 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low R providing excellent thermal stability th  Designed for low memory effects providing excellent digital pre-distortion capability  Internally matched for ease of use  Integrated ESD protection  Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications  RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz frequency range

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF7G24L-100 (SOT502A) 1 drain 1 1 2 gate 3 3 source [1] 2 2 3 sym112 BLF7G24LS-100 (SOT502B) 1 drain 1 1 2 gate 3 3 source [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF7G24L-100 - flanged LDMOST ceramic package; 2mountingholes; SOT502A 2leads BLF7G24LS-100 - earless flanged LDMOST ceramic package; 2leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 28 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T =80C; P =100W 0.3 K/W th(j-c) case L BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 2 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 6. Characteristics Table 6. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I =1mA 65 - - V (BR)DSS GS D V gate-source threshold voltage V =10 V; I =150mA 1.5 1.8 2.3 V GS(th) DS D I drain leakage current V =0V; V =28V - - 5 A DSS GS DS I drain cut-off current V =V +3.75 V; 25.1 29 - A DSX GS GS(th) V =10V DS I gate leakage current V =11V; V =0V - - 500 nA GSS GS DS g forward transconductance V =10V; I =5.35A - 10.5 - S fs DS D R drain-source on-state resistance V =V + 3.75V; - 0.1 -  DS(on) GS GS(th) I =5.25A D 7. Test information Remark: All testing performed in a class-AB production test circuit. Table 7. Functional test information Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8-13). PAR = 9.7 dB at 0.01% probability on the CCDF, channel bandwidth is 1.2288 MHz; f =2300MHz; f =2400MHz; RFperformance at V =28V; I =900mA; 1 2 DS Dq T =25C; unless otherwise specified. case Symbol Parameter Conditions Min Typ Max Unit P average output power - 20 - W L(AV) G power gain 17.3 18 - dB p RL input return loss - 14 - dB in  drain efficiency 22 27 - % D ACPR adjacent channel power ratio (885 kHz) - 46 40 dBc 885k 7.1 Ruggedness in class-AB operation The BLF7G24L-100 and BLF7G24LS-100 are capable of withstanding a load mismatch corresponding to VSWR=10 : 1 through all phases under the following conditions: V =28V; I =900mA; P =100W(CW); f=2300MHz. DS Dq L BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 3 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 7.2 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01% probability on the CCDF. Channel bandwidth is 1.2288 MHz. 001aan495 001aan496 19.5 50 η D Gp (2) (%) (dB) 40 (1) (2) (1) 18.5 30 20 17.5 10 16.5 0 0 20 40 60 80 0 20 40 60 80 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 1. Single carrier IS-95 power gain as a function of Fig 2. Single carrier IS-95 drain efficiency as a load power; typicalvalues function of load power; typicalvalues 000011aaaann449977 000011aaaann449988 --2200 --3300 AAPPCCRR888855kk AAPPCCRR11998800kk ((ddBBcc)) ((ddBBcc)) --3300 --4400 ((22)) --4400 --5500 ((22)) ((11)) ((11)) --5500 --6600 --6600 --7700 --7700 --8800 00 2200 4400 6600 8800 00 2200 4400 6600 8800 PPLL ((WW)) PPLL ((WW)) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 3. Single carrier IS-95 ACPR at 885 kHz as a Fig 4. Single carrier IS-95 ACPR at 1980 kHz as a function of load power; typicalvalues function of load power; typicalvalues BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 4 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 001aan499 001aan500 12 200 PL(M) PAR (W) (1) (dB) 160 (2) 8 120 (1) 80 4 (2) 40 0 0 0 20 40 60 80 0 20 40 60 80 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 5. Single carrier IS-95 peak-to-average power Fig 6. Single carrier IS-95 peak power as a function ratio as a function of load power; of load power; typicalvalues typicalvalues BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 5 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 7.3 Pulsed CW 001aan501 001aan502 19.5 60 η D Gp (2) (%) (dB) 50 (2) (1) 18.5 (1) 40 30 17.5 20 16.5 10 0 40 80 120 160 0 40 80 120 160 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 7. Pulsed CW power gain as a function of load Fig 8. Pulsed CW drain efficiency as a function of power; typicalvalues load power; typicalvalues BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 6 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 7.4 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. 001aan503 001aan504 19.5 60 η D Gp (%) (dB) (2) 50 18.5 40 (1) (1) (2) 30 17.5 20 16.5 10 0 20 40 60 80 100 0 20 40 60 80 100 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 9. Single carrier W-CDMA power gain as a Fig 10. Single carrier W-CDMA drain efficiency as a function of load power; typicalvalues function of load power; typicalvalues −10 001aan505 −20 001aan506 APCR5M APCR10M (dBc) (dBc) −20 −30 −30 (2) −40 (2) (1) −40 −50 (1) −50 −60 −60 −70 0 20 40 60 80 100 0 20 40 60 80 100 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a function of load power; typicalvalues function of load power; typicalvalues BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 7 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 001aan507 001aan508 8 250 PAR PL(M) (W) (dB) 200 6 (1) (1) (2) 150 (2) 4 100 2 50 0 0 0 20 40 60 80 100 0 20 40 60 80 100 PL (W) PL (W) V = 28 V; I = 900 mA. V = 28 V; I = 900 mA. DS Dq DS Dq (1) f = 2300 MHz (1) f = 2300 MHz (2) f = 2400 MHz (2) f = 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power Fig 14. Single carrier W-CDMA peak output power as a ratio as a function of load power; function of load power; typicalvalues typicalvalues BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 8 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 8. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q C c 1 L H U2 p E1 E w1M AM BM A 2 b w2M CM Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 3.38 1.70 34.16 9.91 mm 27.94 0.25 0.51 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 3.12 1.45 33.91 9.65 0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067 1.345 0.390 inches 1.100 0.01 0.02 0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057 1.335 0.380 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 03-01-10 SOT502A 12-05-02 Fig 15. Package outline SOT502A BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 9 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c 1 L H U2 E1 E 2 b w2M DM Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L Q U1 U2 w2 4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 1.70 20.70 9.91 mm 0.25 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 1.45 20.45 9.65 0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.067 0.815 0.390 inches 0.010 0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.057 0.805 0.380 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 07-05-09 SOT502B 12-05-02 Fig 16. Package outline SOT502B BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 10 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 9. Abbreviations Table 8. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CW Continuous Wave DPCH Dedicated Physical CHannel IS-95 Interim Standard 95 ESD ElectroStatic Discharge LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF7G24L-100_7G24LS-100 v.5 20150901 Product data sheet - BLF7G24L-100_7G24LS-100 v.4 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF7G24L-100_7G24LS-100 v.4 20110722 Product data sheet - BLF7G24L-100_7G24LS-100 v.3 BLF7G24L-100_7G24LS-100 v.3 20110405 Preliminary data sheet - BLF7G24L-100_7G24LS-100 v.2 BLF7G24L-100_7G24LS-100 v.2 20100714 Objective data sheet - BLF7G24L-100_7G24LS-100 v.1 BLF7G24L-100_7G24LS-100 v.1 20100414 Objective data sheet - - BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 11 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.ampleon.com. 11.2 Definitions Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in Draft — The document is a draft version only. The content is still under such equipment or applications and therefore such inclusion and/or use is at internal review and subject to formal approval, which may result in the customer’s own risk. modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein Applications — Applications that are described herein for any of these and shall have no liability for the consequences of use of such information. products are for illustrative purposes only. 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In no event however, shall an agreement be valid problem which is based on any weakness or default in the customer’s in which the Ampleon product is deemed to offer functions and qualities applications or products, or the application or use by customer’s third party beyond those described in the Product data sheet. customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to 11.3 Disclaimers avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to be accurate and reliable. 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This other industrial or intellectual property rights. document supersedes and replaces all information supplied prior to the Export control — This document as well as the item(s) described herein publication hereof. may be subject to export control regulations. Export might require a prior Suitability for use — Ampleon products are not designed, authorized or authorization from competent authorities. warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 12 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly 11.4 Trademarks states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in Notice: All referenced brands, product names, service names and trademarks accordance with automotive testing or application requirements. Ampleon are the property of their respective owners. accepts no liability for inclusion and/or use of non-automotive qualified Any reference or use of any ‘NXP’ trademark in this document or in or on the products in automotive equipment or applications. surface of Ampleon products does not result in any claim, liability or In the event that customer uses the product for design-in and use in entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of automotive applications to automotive specifications and standards, customer the NXP group of companies and any reference to or use of the ‘NXP’ (a) shall use the product without Ampleon’ warranty of the product for such trademarks will be replaced by reference to or use of Ampleon’s own Any automotive applications, use and specifications, and (b) whenever customer reference or use of any ‘NXP’ trademark in this document or in or on the uses the product for automotive applications beyond Ampleon’ specifications surface of Ampleon products does not result in any claim, liability or such use shall be solely at customer’s own risk, and (c) customer fully entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of indemnifies Ampleon for any liability, damages or failed product claims the NXP group of companies and any reference to or use of the ‘NXP’ resulting from customer design and use of the product for automotive trademarks will be replaced by reference to or use of Ampleon’s own applications beyond Ampleon’ standard warranty and Ampleon’ product trademarks. specifications. 12. Contact information For more information, please visit: For sales office addresses, please visit: http://www.ampleon.com http://www.ampleon.com/sales BLF7G24L-100_7G24LS-100#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 5 — 1 September 2015 13 of 14

BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 4 7.3 Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.4 Single carrier W-CDMA. . . . . . . . . . . . . . . . . . . 7 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 Contact information. . . . . . . . . . . . . . . . . . . . . 13 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF7G24L-100_7G24LS-100#5