BLF6G21-10G Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HFto2200MHz Table 1. Typical performance I =100mA; T =25C in a common source class-AB production test circuit. Dq case Mode of operation f V P G  ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 50[1] 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrierspacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical 2-carrier W-CDMA performance at frequencies of 2110MHz and 2170MHz, asupply voltage of 28 V and an I of 100 mA: Dq Average output power=0.7W Gain=18.5dB Efficiency=15% ACPR=50dBc  Typical 1-carrier W-CDMA performance at frequencies of 2110MHz and 2170MHz, asupply voltage of 28 V and an I of 100 mA: Dq Average output power=2W Gain=19.3dB Efficiency=31% ACPR=39dBc  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency

BLF6G21-10G Power LDMOS transistor  Excellent thermal stability  No internal matching for broadband operation  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multi carrier applications in the HF to 2200 MHz frequency range  Broadcast drivers 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain 1 1 2 gate 3 source [1] 3 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G21-10G - ceramic surface-mounted package; 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 2 of 12

BLF6G21-10G Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T = 80 C; P =11W [1] 3.2 K/W th(j-case) case L(AV) [1] Thermal resistance is determined under specified RF operating conditions 6. Characteristics Table 6. Characterist ics T = 25 C unless otherwise specified j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I =0.5mA 65 - - V (BR)DSS GS D V gate-source threshold voltage V =10 V; I =18mA 1.4 1.9 2.4 V GS(th) DS D I drain leakage current V =0V; V =28V - - 1.5 A DSS GS DS I drain cut-off current V =V +3.75 V; V =10V - 3.1 - A DSX GS GS(th) DS I gate leakage current V =11V; V =0V - - 150 nA GSS GS DS g forward transconductance V =10V; I =0.9A - 0.5 - S fs DS D R drain-source on-state resistance V =V +3.75 V; I =0.625A - 0.4 -  DS(on) GS GS(th) D C feedback capacitance V =0V; V =28V; f=1MHz - 0.5 - pF rs GS DS 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP testmodel1; 1-64 PDPCH; f = 2112.5 MHz; f = 2117.5 MHz; f = 2162.5 MHz; f =2167.5MHz; 1 2 3 4 RFperformance at V = 28 V; I = 100 mA; T = 25 C; unlessotherwisespecified; in a DS Dq case class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit G power gain P = 0.7 W - 18.5 - dB p L(AV)  drain efficiency P = 0.7 W - 15 - % D L(AV) ACPR adjacent channel power ratio P = 0.7 W - 50 - dBc L(AV) Table 8. Application information Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP testmodel1; 1-64 PDPCH; f = 2112.5 MHz; f = 2167.5 MHz; RFperformance at V =28V; 1 2 DS I =100mA; T = 25 C; unless otherwise specified; in a class-AB production test circuit. Dq case Symbol Parameter Conditions Min Typ Max Unit G power gain P = 2 W 17.3 19.3 - dB p L(AV)  drain efficiency P = 2 W 29 31 - % D L(AV) ACPR adjacent channel power ratio P = 2 W - 39 36 dBc L(AV) 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR=10:1 through all phases under the following conditions: V =28V; DS f=2140MHz at P =10W. L BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 3 of 12

BLF6G21-10G Power LDMOS transistor 7.2 CW 001aal120 50 RLin (dB) 40 (1) 30 20 (2) (3) 10 0 0 4 8 12 16 PL (W) V = 28 V; I = 100 mA. DS Dq (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 1. CW input return loss as a function of load power; typicalvalues 001aal121 001aal122 19.5 80 η D Gp (%) (dB) 60 (1) 18.5 (2) (3) 40 17.5 (1) (2) 20 (3) 16.5 0 0 4 8 12 16 0 4 8 12 16 PL (W) PL (W) V = 28 V; I = 100 mA. V = 28 V; I = 100 mA. DS Dq DS Dq (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 2. CW power gain as a function of load power; Fig 3. CW drain efficiency as a function of typical values loadpower; typical values BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 4 of 12

BLF6G21-10G Power LDMOS transistor 7.3 1-carrier W-CDMA 001aal123 50 RLin (dB) 40 (1) 30 20 (2) (3) 10 0 0 1 2 3 4 PL (W) V = 28 V; I = 100 mA. DS Dq (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 4. 1-carrier W-CDMA input return loss as a function of load power; typicalvalues 001aal124 001aal125 20.0 50 Gp ηD (dB) (%) 19.6 40 19.2 30 (1) (2) (3) (1) 18.8 (2) 20 (3) 18.4 10 18.0 0 0 1 2 3 4 0 1 2 3 4 PL (W) PL (W) V = 28 V; I = 100 mA. V = 28 V; I = 100 mA. DS Dq DS Dq (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 5. 1-carrier W-CDMA power gain as a function of Fig 6. 1-carrier W-CDMA drain efficiency as a load power; typical values function of loadpower; typical values BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 5 of 12

BLF6G21-10G Power LDMOS transistor −30 001aal126 −52 001aal127 ACPR ACPR (dBc) (dBc) −40 −56 (3) (2) (1) −50 −60 (3) (2) (1) −60 −64 0 1 2 3 4 0 1 2 3 4 PL (W) PL (W) V = 28 V; I = 100 mA; carrier spacing 5MHz. V = 28 V; I = 100 mA; carrier spacing 10MHz. DS Dq DS Dq (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 7. 1-carrier W-CDMA adjacent channel power Fig 8. 1-carrier W-CDMA adjacent channel power ratio as a function of load power; ratio as a function of load power; typicalvalues typicalvalues 7.4 2-carrier W-CDMA 001aal128 40 RLin (dB) (1) 30 20 (2) (3) 10 0 0 0.6 1.2 1.8 PL (W) V = 28 V; I = 100 mA. DS Dq (1) f = 2.11 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz Fig 9. 2-carrier W-CDMA input return loss as a function of load power; typicalvalues BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 6 of 12

BLF6G21-10G Power LDMOS transistor 001aal129 001aal130 20.0 30 Gp (dB) η D 19.6 (%) 20 19.2 (1) (1) 18.8 (2) (2) (3) 10 (3) 18.4 18.0 0 0 0.6 1.2 1.8 0 0.6 1.2 1.8 PL (W) PL (W) V = 28 V; I = 100 mA. V = 28 V; I = 100 mA. DS Dq DS Dq (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 10. 2-carrier W-CDMA power gain as a function of Fig 11. 2-carrier W-CDMA drain efficiency as a load power; typical values function of loadpower; typical values −30 001aal131 −40 001aal132 ACPR ACPR (dBc) (dBc) −45 −40 (3) (3) −50 (2) (2) (1) (1) −50 −55 −60 −60 0 0.6 1.2 1.8 0 0.6 1.2 1.8 PL (W) PL (W) V = 28 V; I = 100 mA; carrier spacing 5MHz. V = 28 V; I = 100 mA; carrier spacing 10MHz. DS Dq DS Dq (1) f = 2.11 GHz (1) f = 2.11 GHz (2) f = 2.14 GHz (2) f = 2.14 GHz (3) f = 2.17 GHz (3) f = 2.17 GHz Fig 12. 2-carrier W-CDMA adjacent channel power Fig 13. 2-carrier W-CDMA adjacent channel power ratio as a function of load power; ratio as a function of load power; typicalvalues typicalvalues BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 7 of 12

BLF6G21-10G Power LDMOS transistor 8. Package outline Ceramic surface-mounted package; 2 leads SOT538A D A 3 z2 (4×) z4 (4×) D1 D2 B c 1 Lp L A z1 (4×) H E2 E1 E z3 (4×) 2 b w1 B α Q 0 2.5 5 mm scale Dimensions (mm are the original dimensions) Unit A b c D D1 D2 E E1 E2 H L Lp Q w1 z1 z2 z3 z4 θ max 2.34 1.35 0.23 5.16 4.65 5.16 4.14 3.63 4.14 7.49 2.03 1.02 0.1 0.58 0.25 0.97 0.51 7° mm nom 0.25 min 2.13 1.19 0.18 5.00 4.50 5.00 3.99 3.48 3.99 7.24 1.27 0.51 0.0 0.43 0.18 0.81 0.00 0° sot538a_po Outline References European Issue date version IEC JEDEC JEITA projection 13-02-07 SOT538A 15-04-05 Fig 14. Package outline SOT538A BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 8 of 12

BLF6G21-10G Power LDMOS transistor 9. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel PHS Personal Handy-phone System RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G21-10G#4 20150901 Product data sheet - BLF6G21-10G v.3 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF6G21-10G v.3 20130411 Product data sheet - BLF6G21-10G v.2 BLF6G21-10G v.2 20091211 Product data sheet - BLF6G21-10G v.1 BLF6G21-10G v.1 20090511 Objective data sheet - - BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 9 of 12

BLF6G21-10G Power LDMOS transistor 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.ampleon.com. 11.2 Definitions Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in Draft — The document is a draft version only. The content is still under such equipment or applications and therefore such inclusion and/or use is at internal review and subject to formal approval, which may result in the customer’s own risk. modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein Applications — Applications that are described herein for any of these and shall have no liability for the consequences of use of such information. products are for illustrative purposes only. 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In no event however, shall an agreement be valid problem which is based on any weakness or default in the customer’s in which the Ampleon product is deemed to offer functions and qualities applications or products, or the application or use by customer’s third party beyond those described in the Product data sheet. customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to 11.3 Disclaimers avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to be accurate and reliable. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect In no event shall Ampleon be liable for any indirect, incidental, punitive, the quality and reliability of the device. special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Terms and conditions of commercial sale — Ampleon products are sold replacement of any products or rework charges) whether or not such subject to the general terms and conditions of commercial sale, as published damages are based on tort (including negligence), warranty, breach of at http://www.ampleon.com/terms, unless otherwise agreed in a valid written contract or any other legal theory. individual agreement. In case an individual agreement is concluded only the Notwithstanding any damages that customer might incur for any reason terms and conditions of the respective agreement shall apply. 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This other industrial or intellectual property rights. document supersedes and replaces all information supplied prior to the Export control — This document as well as the item(s) described herein publication hereof. may be subject to export control regulations. Export might require a prior Suitability for use — Ampleon products are not designed, authorized or authorization from competent authorities. warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 10 of 12

BLF6G21-10G Power LDMOS transistor Non-automotive qualified products — Unless this data sheet expressly 11.4 Trademarks states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in Notice: All referenced brands, product names, service names and trademarks accordance with automotive testing or application requirements. Ampleon are the property of their respective owners. accepts no liability for inclusion and/or use of non-automotive qualified Any reference or use of any ‘NXP’ trademark in this document or in or on the products in automotive equipment or applications. surface of Ampleon products does not result in any claim, liability or In the event that customer uses the product for design-in and use in entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of automotive applications to automotive specifications and standards, customer the NXP group of companies and any reference to or use of the ‘NXP’ (a) shall use the product without Ampleon’ warranty of the product for such trademarks will be replaced by reference to or use of Ampleon’s own Any automotive applications, use and specifications, and (b) whenever customer reference or use of any ‘NXP’ trademark in this document or in or on the uses the product for automotive applications beyond Ampleon’ specifications surface of Ampleon products does not result in any claim, liability or such use shall be solely at customer’s own risk, and (c) customer fully entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of indemnifies Ampleon for any liability, damages or failed product claims the NXP group of companies and any reference to or use of the ‘NXP’ resulting from customer design and use of the product for automotive trademarks will be replaced by reference to or use of Ampleon’s own applications beyond Ampleon’ standard warranty and Ampleon’ product trademarks. specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12. Contact information For more information, please visit: For sales office addresses, please visit: http://www.ampleon.com http://www.ampleon.com/sales BLF6G21-10G#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 11 of 12

BLF6G21-10G Power LDMOS transistor 13. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information. . . . . . . . . . . . . . . . . . . 3 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Contact information. . . . . . . . . . . . . . . . . . . . . 11 13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF6G21-10G#4