BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200W LDMOS power transistor for base station applications at frequencies from 700MHz to 1000MHz. Table 1. Typical performance Typical RF performance at T = 25 C in a class-AB production test circuit. case Mode of operation f V P G  ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR=7.5dB at 0.01 % probability on CCDF per carrier; carrierspacing 5MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features  Typical 2-carrier W-CDMA performance at frequencies of 869MHz and 894MHz, a supply voltage of 28V and an I of 1400mA: Dq Average output power=40W Power gain=20dB Efficiency=28.5% ACPR=39dBc  Easy power control  Integrated ESD protection  Enhanced ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

BLF6G10(LS)-200RN Power LDMOS transistor 1.3 Applications  RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multicarrier applications in the 700 MHz to 1000 MHz frequency range. 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G10-200RN (SOT502A) 1 drain 1 1 2 gate 3 3 source [1] 2 2 3 sym112 BLF6G10LS-200RN (SOT502B) 1 drain 1 1 2 gate 3 3 source [1] 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G10-200RN - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2leads BLF6G10LS-200RN - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS I drain current - 49 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 2 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit R thermal resistance from T =80C; BLF6G10-200RN 0.50 K/W th(j-case) case junction to case P =40W L BLF6G10LS-200RN 0.35 K/W 6. Characteristics Table 6. Characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown V =0V; I =0.9mA 65 - - V (BR)DSS GS D voltage V gate-source threshold voltage V =10 V; I =270mA 1.4 2.0 2.4 V GS(th) DS D V gate-source quiescent voltage V =28 V; 1.7 2.2 2.7 V GSq DS I =1620mA D I drain leakage current V =0V; V =28V - - 4.2 A DSS GS DS I drain cut-off current V =V +3.75 V; 40 48 - A DSX GS GS(th) V =10V DS I gate leakage current V =11V; V =0V - - 420 nA GSS GS DS g forward transconductance V =10V; I =9.45A 11 18 26 S fs DS D R drain-source on-state V =V + 3.75V; 0.012 0.07 0.093  DS(on) GS GS(th) resistance I =9.45A D C feedback capacitance V =0V; V =28V; - 3 - pF rs GS DS f= 1MHz 7. Application information Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR7.5dB at 0.01% probability on CCDF; 3GPP test model1; 1-64 PDPCH; f =871.5 MHz; f =876.5 MHz; f =886.5 MHz; f =891.5 MHz; 1 2 3 4 RFperformance at V =28V; I =1400mA; T =25 C; unless otherwise specified; in a DS Dq case class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit P average output power - 40 - W L(AV) G power gain P = 40 W 19 20 - dB p L(AV) IRL input return loss P = 40 W - 6.4 4.5 dB L(AV)  drain efficiency P = 40 W 25 28.5 - % D L(AV) ACPR adjacent channel power ratio P = 40 W - 39.4 36 dBc L(AV) 7.1 Ruggedness in class-AB operation The BLF6G10-200RN and BLF6G10LS-200RN are enhanced rugged devices and are capable of withstanding a load mismatch corresponding to VSWR=10 : 1 through all phases under the following conditions: V =28V; I =1400mA; P =200 W; DS Dq L f=894MHz. BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 3 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 7.2 One-tone CW 001aaj415 21 60 Gp Gp ηD (dB) (%) 19 40 η D 17 20 15 0 0 40 80 120 160 200 PL (W) V = 28 V; I = 1400 mA; f = 881 MHz. DS Dq Fig 1. One-tone CW power gain and drain efficiency as function of load power; typicalvalues 7.3 Two-tone CW 21 001aaj416 60 −20 001aah520 IMD Gp Gp ηD (dBc) (dB) (%) −30 IMD3 19 40 η D −40 IMD5 17 20 IMD7 −50 15 0 −60 0 120 240 360 0 60 120 180 PL(PEP) (W) PL(PEP) (W) VDS = 28 V; IDq = 1400 mA; f=881MHz (100 kHz). VDS = 28 V; IDq = 1400 mA; f=881MHz (100 kHz). Fig 2. Two-tone CW power gain and drain efficiency Fig 3. Two-tone CW intermodulation distortion as a as function of peak envelope load power; function of peak envelope load power; typical typicalvalues values BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 4 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 7.4 2-carrier W-CDMA 22 001aaj417 40 −35 001aah522 Gp ηD AIMCDP3R, (dB) (%) (dBc) 21 30 −40 IMD3 20 20 −45 ACPR Gp η 19 D 10 −50 18 0 −55 0 20 40 60 0 20 40 60 PL(AV) (W) PL(AV) (W) VDS = 28 V; IDq = 1400 mA; f=881MHz (5 MHz); VDS = 28 V; IDq = 1400 mA; f=881MHz (5 MHz); carrier spacing 10 MHz. carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain Fig 5. 2-carrier W-CDMA adjacent channel power efficiency as function of average load power; ratio and third order intermodulation distortion typical values as function of average load power; typical values 8. Test information VGG VDD R1 C3 C7 C8 C11 C13 C17 R3 L1 R2 C5 input output 50 Ω C1 C16 50 Ω C6 C2 C15 C9 C10 C12 C14 C18 001aah523 The drawing is not to scale. Fig 6. Test circuit for operation at 800MHz BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 5 of 12

BLF6G10(LS)-200RN Power LDMOS transistor C7 C8 R1 C11C13 R3 C3 Q1 L1 C17 R2 C5 C16 C1 C2 C6 C15 C18 C12 C14 C9C10 IN OUT 800 -1000 MHz 800 -1000 MHz V1.0 V1.0 001aah524 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r=3.5 and thickness=0.76mm. See Table8 for list of components. The drawing is not to scale. Fig 7. Component layout Table 8. List of comp onents See Figure6 and Figure7. Component Description Value Remarks C1, C3, C11, C12, C16 multilayer ceramic chip capacitor 68 pF [1] solder vertically C2 multilayer ceramic chip capacitor 13 pF [1] solder vertically C5, C6 multilayer ceramic chip capacitor 10 pF [1] solder vertically C7, C8, C9, C10 electrolytic capacitor 220 nF Vishay VJ1206Y224KXB C13, C14 multilayer ceramic chip capacitor 4.7 F; 50 V [2] C15 multilayer ceramic chip capacitor 1.5 pF [1] solder vertically C17, C18 electrolytic capacitor 220 F; 63 V L1 ferrite SMD bead - Ferroxcube BDS 3/3/4.6-4S2 or equivalent Q1 BLF6G10LS-200RN - R1, R2, R3 SMD resistor 9.1 ; 0.1 W [1] American Technical Ceramics type 100B or capacitor of same quality. [2] TDK or capacitor of same quality. BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 6 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q C c 1 L H U2 p E1 E w1M AM BM A 2 b w2M CM Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2 4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 3.38 1.70 34.16 9.91 mm 27.94 0.25 0.51 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 3.12 1.45 33.91 9.65 0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067 1.345 0.390 inches 1.100 0.01 0.02 0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057 1.335 0.380 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 03-01-10 SOT502A 12-05-02 Fig 8. Package outline SOT502A BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 7 of 12

BLF6G10(LS)-200RN Power LDMOS transistor Earless flanged ceramic package; 2 leads SOT502B D A F 3 D1 D U1 c 1 L H U2 E1 E 2 b w2M DM Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L Q U1 U2 w2 4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 1.70 20.70 9.91 mm 0.25 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 1.45 20.45 9.65 0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.067 0.815 0.390 inches 0.010 0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.057 0.805 0.380 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 07-05-09 SOT502B 12-05-02 Fig 9. Package outline SOT502B BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 8 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio W-CDMA Wideband Code Division Multiple Access 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G10-200RN_10LS-200RN#3 20150901 Product data sheet - BLF6G10-200RN_10LS-200RN_2 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF6G10-200RN_10LS-200RN_2 20100121 Product data sheet - BLF6G10-200RN_10LS-200RN_1 BLF6G10-200RN_10LS-200RN_1 20090119 Product data sheet - - BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 9 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.ampleon.com. 12.2 Definitions Applications — Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without Draft — The document is a draft version only. The content is still under further testing or modification. internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or Customers are responsible for the design and operation of their applications warranties as to the accuracy or completeness of information included herein and products using Ampleon products, and Ampleon accepts no liability for and shall have no liability for the consequences of use of such information. any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Ampleon product is suitable and Short data sheet — A short data sheet is an extract from a full data sheet fit for the customer’s applications and products planned, as well as for the with the same product type number(s) and title. A short data sheet is intended planned application and use of customer’s third party customer(s). Customers for quick reference only and should not be relied upon to contain detailed and should provide appropriate design and operating safeguards to minimize the full information. For detailed and full information see the relevant full data risks associated with their applications and products. sheet, which is available on request via the local Ampleon sales office. 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However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or Limiting values — Stress above one or more limiting values (as defined in completeness of such information and shall have no liability for the the Absolute Maximum Ratings System of IEC60134) will cause permanent consequences of use of such information. Ampleon takes no responsibility for damage to the device. Limiting values are stress ratings only and (proper) the content in this document if provided by an information source outside of operation of the device at these or any other conditions above those given in Ampleon. the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or In no event shall Ampleon be liable for any indirect, incidental, punitive, repeated exposure to limiting values will permanently and irreversibly affect special or consequential damages (including - without limitation - lost profits, the quality and reliability of the device. lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — Ampleon products are sold damages are based on tort (including negligence), warranty, breach of subject to the general terms and conditions of commercial sale, as published contract or any other legal theory. at http://www.ampleon.com/terms, unless otherwise agreed in a valid written Notwithstanding any damages that customer might incur for any reason individual agreement. 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Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in Notice: All referenced brands, product names, service names and trademarks such equipment or applications and therefore such inclusion and/or use is at are the property of their respective owners. the customer’s own risk. Any reference or use of any ‘NXP’ trademark in this document or in or on the BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 10 of 12

BLF6G10(LS)-200RN Power LDMOS transistor surface of Ampleon products does not result in any claim, liability or surface of Ampleon products does not result in any claim, liability or entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ the NXP group of companies and any reference to or use of the ‘NXP’ trademarks will be replaced by reference to or use of Ampleon’s own Any trademarks will be replaced by reference to or use of Ampleon’s own reference or use of any ‘NXP’ trademark in this document or in or on the trademarks. 13. Contact information For more information, please visit: For sales office addresses, please visit: http://www.ampleon.com http://www.ampleon.com/sales BLF6G10-200RN_10LS-200RN#3 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 — 1 September 2015 11 of 12

BLF6G10(LS)-200RN Power LDMOS transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information. . . . . . . . . . . . . . . . . . . 3 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 Contact information. . . . . . . . . . . . . . . . . . . . . 11 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF6G10-200RN_10LS-200RN#3