BLF645 Broadband power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description A 100W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at T = 25 C in a common source test circuit. h Mode of operation f V P P G  IMD DS L L(PEP) p D (MHz) (V) (W) (W) (dB) (%) (dBc) CW, class-AB 1300 32 100 - 18 56 - 2-tone, class-AB 1300 32 - 100 18 45 32 1.2 Features  CW performance at 1300 MHz, a drain-source voltage V of 32V and a quiescent DS drain current I =0.9A for total device: Dq Average output power =100W Power gain=18dB Drain efficiency =56%  2-tone performance at 1300 MHz, a drain-source voltage V of 32 V and a quiescent DS drain current I =0.9A for total device: Dq Peak envelope load power =100W Power gain=18dB Drain efficiency =45% Intermodulation distortion = 32 dBc  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

BLF645 Broadband power LDMOS transistor 1.3 Applications  Communication transmitter applications in the HF to 1400MHz frequency range  Industrial applications in the HF to 1400MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain 1 1 2 1 2 drain 2 3 gate 1 5 3 4 gate2 3 4 5 4 5 source [1] 2 sym117 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF645 - flanged balanced LDMOST ceramic package; 2 SOT540A mounting holes; 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +11 V GS I drain current - 32 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to case T = 80 C; P = 100 W [1] 0.67 K/W th(j-c) case L [1] R is measured under RF conditions. th(j-c) BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 2 of 14

BLF645 Broadband power LDMOS transistor 6. Characteristics Table 6. Characteristics per section T = 25 C per section; unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I =0.9mA 65 - - V (BR)DSS GS D V gate-source threshold voltage V =32 V; I =90mA 1.4 1.9 2.4 V GS(th) DS D V gate-source quiescent voltage V =32V; I =450mA 1.5 2.0 2.5 V GSq DS Dq I drain leakage current V =0V; V =32V - - 1.4 A DSS GS DS I drain cut-off current V =V +3.75V; - 14 - A DSX GS GS(th) V =10V DS I gate leakage current V =10V; V =0V - - 120 nA GSS GS DS g forward transconductance V =10V; I =4.5 A - 6.4 - S fs DS D R drain-source on-state resistance V =V +3.75V; - 220 - m DS(on) GS GS(th) I =3.15A D C input capacitance V = 0 V; V =32V; - 69 - pF iss GS DS f=1MHz C output capacitance V = 0 V; V =32V; - 25 - pF oss GS DS f=1MHz C feedback capacitance V = 0 V; V =32V; - 1.2 - pF rs GS DS f=1MHz 7. Application information Table 7. RF performance in a common-source class-AB circuit T =25C; I = 0.9A for total device. h Dq Mode of operation f V P G  DS L p D (MHz) (V) (W) (dB) (%) CW, class-AB 1300 32 100 > 16.5 > 53 7.1 Ruggedness in class-AB operation The BLF645 is capable of withstanding a load mismatch corresponding to VSWR=10:1 through all phases under the following conditions: V =32V; f=1300MHz at rated load DS power. BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 3 of 14

BLF645 Broadband power LDMOS transistor 8. Test information 8.1 RF performance The following figures are measured in a class-AB production test circuit. 8.1.1 1-Tone CW 001aal361 001aal362 20 70 20 Gp ηD Gp (dB) Gp (%) (dB)19 19 60 18 (7) 18 50 (6) ηD 17 ((54)) 17 40 (3) (2) 16 (1) 16 30 15 15 20 14 14 10 13 13 0 12 0 40 80 120 160 0 40 80 120 160 PL (W) PL (W) V = 32 V; I =900 mA (for total device); V = 32 V; f=1300MHz. DS Dq DS f=1300MHz. (1) I = 200 mA (for total device). Dq (2) I = 400 mA (for total device). Dq (3) I = 600 mA (for total device). Dq (4) I = 900 mA (for total device). Dq (5) I = 1200 mA (for total device). Dq (6) I = 1400 mA (for total device). Dq (7) I = 1800 mA (for total device). Dq Fig 1. Power gain and drain efficiency as function of Fig 2. Power gain as a function of load power; load power; typical values typicalvalues BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 4 of 14

BLF645 Broadband power LDMOS transistor 001aal363 55 PL (dBm) ideal PL 53 (2) 51 (1) PL 49 47 45 27 29 31 33 35 37 Pi (dBm) V = 32 V; I =900 mA (for total device); f = 1300 MHz. DS Dq (1) P = 50.5 dBm (112 W). L(1dB) (2) P = 51.5 dBm (141 W). L(3dB) Fig 3. Load power as function of input power; typical values BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 5 of 14

BLF645 Broadband power LDMOS transistor 8.1.2 2-Tone CW 001aal364 001aal365 20 60 0 Gp ηD IMD3 (dB) (%) (dBc) 19 50 −10 Gp 18 40 −20 η D 17 30 −30 (1) (2) 16 20 −40 (3) (4) (5) (6) 15 10 −50 (7) 14 0 −60 0 40 80 120 160 0 40 80 120 160 200 PL(PEP) (W) PL(PEP) (W) V = 32 V; I =900 mA (for total device); V = 32 V; f = 1300 MHz; carrierspacing=100kHz. DS Dq DS f=1300MHz; carrierspacing=100kHz. (1) I = 200 mA (for total device). Dq (2) I = 400 mA (for total device). Dq (3) I = 600 mA (for total device). Dq (4) I = 900 mA (for total device). Dq (5) I = 1200 mA (for total device). Dq (6) I = 1400 mA (for total device). Dq (7) I = 1800 mA (for total device). Dq Fig 4. Power gain and drain efficiency as function of Fig 5. Third order intermodulation distortion as a peak envelope load power; typical values function of peak envelope load power; typical values BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 6 of 14

BLF645 Broadband power LDMOS transistor 8.2 Reliability 105 001aal366 Years (1) 104 (2) (3) (4) (5) (6) 103 102 (7) 10 (8) (9) (10) (11) 1 0 4 8 12 16 20 IDS(DC) (A) TTF (0.1 % failure fraction). (1) Tj = 100 C. (2) Tj = 110 C. (3) Tj = 120 C. (4) Tj = 130 C. (5) Tj = 140 C. (6) Tj = 150 C. (7) Tj = 160 C. (8) Tj = 170 C. (9) Tj = 180 C. (10) Tj = 190 C. (11) Tj = 200 C. Fig 6. BLF645 electromigration (I , total device) DS(DC) BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 7 of 14

BLF645 Broadband power LDMOS transistor 8.3 Test circuit VDD C15 VGG C13 C4 R3 T2 C2 R5 L1 C11 IN R1 C6 L6 L8 L10 OUT 50 Ω C1 L3 C8 L4 C9 C10 L12 L14 C17 50 Ω L5 L13 R2 C7 L7 L9 L11 C12 C3 R4 T1 R6 L2 C5 C14 VGG C16 VDD 001aal367 See Table8 for a list of components. Fig 7. Class-AB common-source production test circuit C4 + C15 R3 C13 T2 R5 L1 C6 C2 R1 C11 C1 C9 C10 C17 C8 C3 R2 C12 C7 R6 L2 T1 R4 C14 C5 BLF645 INPUT REVZ BLF645 OUTPUT REVZ + C16 001aal368 See Table8 for a list of components. Fig 8. Component layout for class-AB production test circuit BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 8 of 14

BLF645 Broadband power LDMOS transistor Table 8. List of comp onents For test circuit, see Figure7 and Figure8. Component Description Value Remarks C1 multilayer ceramic chip capacitor 47 pF [1] C6, C7, C11, C12, multilayer ceramic chip capacitor 27 pF [2] C17 C2, C3 multilayer ceramic chip capacitor 100 nF Murata X7R or equivalent C4, C5, C13, C14 multilayer ceramic chip capacitor 4.7 F TDK C4532X7R1E475MT020U or capacitor of same quality. C8 multilayer ceramic chip capacitor 1.5 pF [2] C9 multilayer ceramic chip capacitor 3.3 pF [2] C10 multilayer ceramic chip capacitor 6.2 pF [3] C15, C16 electrolytic capacitor 220 F TDK C4532X7R1E475MT020U or capacitor of same quality. L1, L2 4 turns, 0.8 mm enameled copper wire D = 3.5 mm; length = 4 mm L3 microstrip - [4] (W  L)1.67mm 19.17mm L4, L5 microstrip - [4] (W  L)1.9mm 23.7mm L6, L7 microstrip - [4] (W  L)9.6mm 17.3mm L8, L9 microstrip - [4] (W  L)9mm12mm L10, L11 microstrip - [4] (W  L)8.5mm 31.0mm L12, L13 microstrip - [4] (W  L)4.52mm 5.0mm L14 microstrip - [4] (W  L)1.67mm 21.67mm R1, R2 SMD resistor 11  1206 R3, R4 SMD resistor 1 k 1206 R5, R6 SMD resistor 12  1206 T1, T2 semi rigid coax Z = 50 ; length=34mm [1] American technical ceramics type 100A or capacitor of same quality. [2] American technical ceramics type 100B or capacitor of same quality. [3] American technical ceramics type 180R or capacitor of same quality. [4] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.79 mm; Cu (top/bottom metallization); thicknesscopperplating=35m. BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 9 of 14

BLF645 Broadband power LDMOS transistor 9. Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT540A D A F D1 U1 B q C H1 w2M CM c 1 2 H U2 p E1 E 5 w1M AM BM 3 4 A b w3M Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 e E E1 F H H1 p Q q U1 U2 w1 w2 w3 5.77 8.51 0.15 22.05 22.05 10.26 10.31 1.78 15.75 18.72 3.38 2.72 34.16 9.91 mm 10.21 27.94 0.25 0.51 0.25 5.00 8.26 0.10 21.64 21.64 10.06 10.01 1.52 14.73 18.47 3.12 2.46 33.91 9.65 0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 inches 0.402 1.100 0.010 0.020 0.010 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 99-12-28 SOT540A 12-05-02 Fig 9. Package outline SOT540A BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 10 of 14

BLF645 Broadband power LDMOS transistor 10. Abbreviations Table 9. Abbreviations Acronym Description CW Continuous Waveform DC Direct Current D-MOS Diffusion Metal-Oxide Semiconductor ESD ElectroStatic Discharge HF High Frequency LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency SMD Surface-Mount Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF645#2 20150901 Product data sheet - BLF645_1 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLF645_1 20100127 Product data sheet - - BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 11 of 14

BLF645 Broadband power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.ampleon.com. 12.2 Definitions Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in Draft — The document is a draft version only. The content is still under such equipment or applications and therefore such inclusion and/or use is at internal review and subject to formal approval, which may result in the customer’s own risk. modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein Applications — Applications that are described herein for any of these and shall have no liability for the consequences of use of such information. products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without Short data sheet — A short data sheet is an extract from a full data sheet further testing or modification. with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and Customers are responsible for the design and operation of their applications full information. For detailed and full information see the relevant full data and products using Ampleon products, and Ampleon accepts no liability for sheet, which is available on request via the local Ampleon sales office. In any assistance with applications or customer product design. It is customer’s case of any inconsistency or conflict with the short data sheet, the full data sole responsibility to determine whether the Ampleon product is suitable and sheet shall prevail. fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers Product specification — The information and data provided in a Product should provide appropriate design and operating safeguards to minimize the data sheet shall define the specification of the product as agreed between risks associated with their applications and products. Ampleon and its customer, unless Ampleon and customer have explicitly Ampleon does not accept any liability related to any default, damage, costs or agreed otherwise in writing. In no event however, shall an agreement be valid problem which is based on any weakness or default in the customer’s in which the Ampleon product is deemed to offer functions and qualities applications or products, or the application or use by customer’s third party beyond those described in the Product data sheet. customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Ampleon products in order to 12.3 Disclaimers avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Ampleon does not accept any liability in this respect. Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Ampleon does not give any Limiting values — Stress above one or more limiting values (as defined in representations or warranties, expressed or implied, as to the accuracy or the Absolute Maximum Ratings System of IEC60134) will cause permanent completeness of such information and shall have no liability for the damage to the device. Limiting values are stress ratings only and (proper) consequences of use of such information. Ampleon takes no responsibility for operation of the device at these or any other conditions above those given in the content in this document if provided by an information source outside of the Recommended operating conditions section (if present) or the Ampleon. Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect In no event shall Ampleon be liable for any indirect, incidental, punitive, the quality and reliability of the device. special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or Terms and conditions of commercial sale — Ampleon products are sold replacement of any products or rework charges) whether or not such subject to the general terms and conditions of commercial sale, as published damages are based on tort (including negligence), warranty, breach of at http://www.ampleon.com/terms, unless otherwise agreed in a valid written contract or any other legal theory. individual agreement. In case an individual agreement is concluded only the Notwithstanding any damages that customer might incur for any reason terms and conditions of the respective agreement shall apply. Ampleon whatsoever, Ampleon’ aggregate and cumulative liability towards customer hereby expressly objects to applying the customer’s general terms and for the products described herein shall be limited in accordance with the conditions with regard to the purchase of Ampleon products by customer. Terms and conditions of commercial sale of Ampleon. No offer to sell or license — Nothing in this document may be interpreted or Right to make changes — Ampleon reserves the right to make changes to construed as an offer to sell products that is open for acceptance or the grant, information published in this document, including without limitation conveyance or implication of any license under any copyrights, patents or specifications and product descriptions, at any time and without notice. This other industrial or intellectual property rights. document supersedes and replaces all information supplied prior to the Export control — This document as well as the item(s) described herein publication hereof. may be subject to export control regulations. Export might require a prior Suitability for use — Ampleon products are not designed, authorized or authorization from competent authorities. warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 12 of 14

BLF645 Broadband power LDMOS transistor 12.4 Trademarks trademarks will be replaced by reference to or use of Ampleon’s own Any reference or use of any ‘NXP’ trademark in this document or in or on the Notice: All referenced brands, product names, service names and trademarks surface of Ampleon products does not result in any claim, liability or are the property of their respective owners. entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ Any reference or use of any ‘NXP’ trademark in this document or in or on the trademarks will be replaced by reference to or use of Ampleon’s own surface of Ampleon products does not result in any claim, liability or trademarks. entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the ‘NXP’ 13. Contact information For more information, please visit: For sales office addresses, please visit: http://www.ampleon.com http://www.ampleon.com/sales BLF645#2 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 2 — 1 September 2015 13 of 14

BLF645 Broadband power LDMOS transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information. . . . . . . . . . . . . . . . . . . 3 7.1 Ruggedness in class-AB operation . . . . . . . . . 3 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLF645#2