BLA6H0912-500 LDMOS avionics radar power transistor Rev. 05 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 500W LDMOS power transistor intended for avionics transmitter applications in the 960MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at T =25C; t = 128 s;  = 10 %; I = 100 mA; in a class-AB case p Dq production test circuit. Mode of operation f V P G  t t DS L p D r f (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 960 to 1200 50 450 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits  Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50V, an I of 100mA, a t of 128 s with  of 10 %: Dq p Output power=450W Power gain=17dB Efficiency=50%  Easy power control  Integrated ESD protection  High flexibility with respect to pulse formats  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (960 MHzto1215 MHz)  Internally matched for ease of use  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

BLA6H0912-500 LDMOS avionics radar power transistor 1.3 Applications  A-band power amplifiers for radar applications in the 960 MHzto1215MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain 1 1 2 gate 3 source [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLA6H0912-500 - flanged ceramic package; 2mountingholes; 2leads SOT634A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 54 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Z transient thermal impedance from T =85C; P =450W th(j-c) case L junction to case t = 32 s; =2% 0.03 K/W p t = 128 s; =10% 0.08 K/W p t = 2400 s; =6.4% 0.2 K/W p BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 2 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 6. Characteristics Table 6. DC characteristics T = 25 C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit V drain-source breakdown voltage V =0V; I =2.7mA 100 - - V (BR)DSS GS D V gate-source threshold voltage V =10 V; I =270mA 1.3 1.8 2.2 V GS(th) DS D I drain leakage current V =0V; V =50V - - 3.6 A DSS GS DS I drain cut-off current V =V +3.75V; 53.5 64 - A DSX GS GS(th) V =10V DS I gate leakage current V =11V; V =0V - - 360 nA GSS GS DS g forward transconductance V =10V; I =405mA 2.50 3.5 4.55 S fs DS D R drain-source on-state resistance V =V +3.75 V; - 70 85 m DS(on) GS GS(th) I =14.18A D Table 7. RF characteristics Mode of operation: pulsed RF; f = 960 MHz to 1215 MHz; t = 128 s;  = 10 %; RF performance at p V =50V; I =100mA; T =25C; unless otherwise specified, in a class-AB production test DS Dq case circuit. Symbol Parameter Conditions Min Typ Max Unit P output power - 450 - W L V drain-source voltage P =450W - - 50 V DS L G power gain P =450W 16 17 - dB p L RL input return loss P =450W 7 11 - dB in L  drain efficiency P =450W 45 50 - % D L P pulse droop power P =450W - 0 0.3 dB droop(pulse) L t rise time P =450W - 20 50 ns r L t fall time P =450W - 6 50 ns f L 6.1 Ruggedness in class-AB operation The BLA6H0912-500 is capable of withstanding a load mismatch corresponding to VSWR=10:1 through all phases under the following conditions: f=960MHz, 1030MHz, 1090MHz or 1215MHz. V =50V; I =100mA; P =450W; t =128s; DS Dq L p =10%. BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 3 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 7. Application information 7.1 Impedance information Table 8. Typical impedance Typical values per section unless otherwise specified. f Z Z S L MHz   960 1.36  j1.45 1.49  j1.48 1030 1.54  j1.25 1.51  j1.45 1090 1.67  j1.22 1.36  j1.47 1140 1.68  j1.29 1.15  j1.41 1215 1.43  j1.42 0.79  j1.17 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 4 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 7.2 Performance curves 001aal600 001aal601 600 20 Gp PL (dB) (W) 16 (1) (1) (2) (2) (3) 400 (3) (4) (4) (5) (5) 12 8 200 4 0 0 0 6 12 18 0 200 400 600 Pi (W) PL (W) VDS=50V; IDq=100mA; tp = 128 s;  = 10 %. VDS=50V; IDq=100mA; tp = 128 s;  = 10 %. (1) f = 960 MHz (1) f = 960 MHz (2) f = 1030 MHz (2) f = 1030 MHz (3) f = 1090 MHz (3) f = 1090 MHz (4) f = 1140 MHz (4) f = 1140 MHz (5) f = 1215 MHz (5) f = 1215 MHz Fig 2. Load power as a function of input power; Fig 3. Power gain as a function of load power; typical values typicalvalues BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 5 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 001aal602 001aal603 70 20 70 η (%D) Gp ηD 60 (dB) (%) 18 Gp 60 50 (1) (2) 16 η 50 40 (3) D (4) (5) 30 14 40 20 12 30 10 0 10 20 0 200 400 600 950 1050 1150 1250 PL (W) f (MHz) VDS=50V; IDq=100mA; tp = 128 s;  = 10 %. VDS=50V; IDq=100mA; tp = 128 s;  = 10 %. (1) f = 960 MHz (2) f = 1030 MHz (3) f = 1090 MHz (4) f = 1140 MHz (5) f = 1215 MHz Fig 4. Drain efficiency as a function of load power; Fig 5. Power gain and drain efficiency as function of typical values frequency; typicalvalues 001aal604 16 RLin (dB) 12 8 4 0 950 1050 1150 1250 f (MHz) PL = 500 W; VDS=50V; IDq=100mA; tp = 128 s;  = 10 %. Fig 6. Input return loss as a function of frequency; typicalvalues BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 6 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 7.3 Curves measured under Mode-S ELM pulse-conditions 001aal605 001aal606 600 20 Gp PL (dB) (W) (1) 16 (1) 400 (2) (2) 12 8 200 4 0 0 0 4 8 12 16 20 0 200 400 600 Pi (W) PL (W) f = 1030 MHz; V =50V; I =100mA. f = 1030 MHz; V =50V; I =100mA. DS Dq DS Dq (1) Th = 25 C (1) Th = 25 C (2) Th = 65 C (2) Th = 65 C Fig 7. Load Power as a function of input power; Fig 8. Power gain as a function of load power; typical values typicalvalues 001aal607 60 η D (%) (1) (2) 40 20 0 0 200 400 600 PL (W) f = 1030 MHz; V =50V; I =100mA. DS Dq (1) Th = 25 C (2) Th = 65 C Fig 9. Drain efficiency as function of load power; typicalvalues BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 7 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 7.4 Curves measured under Mode-S interrogator pulse-conditions 001aal608 001aal609 600 20 Gp PL (dB) (W) (1) 16 (1) 400 (2) (2) 12 8 200 4 0 0 0 4 8 12 16 20 0 200 400 600 Pi (W) PL (W) f = 1030 MHz; V =50V; I =100mA. f = 1030 MHz; V =50V; I =100mA. DS Dq DS Dq (1) Th = 25 C (1) Th = 25 C (2) Th = 65 C (2) Th = 65 C Fig 10. Load Power as a function of input power; Fig 11. Power gain as a function of load power; typical values typicalvalues 001aal610 50 η (1) D (%) (2) 40 30 20 10 0 0 200 400 600 PL (W) f = 1030 MHz; V =50V; I =100mA. DS Dq (1) Th = 25 C (2) Th = 65 C Fig 12. Drain efficiency as function of load power; typicalvalues BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 8 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 8. Test information C2 C5 C12 C13 R1 C3 C4 C1 C14 C15 R2 C6 C8 C11 C7 001aal599 Printed-Circuit Board (PCB) material: Duroid 6006 with r=6.15 and thickness=0.64mm. See Table9 for list of components. Fig 13. Component layout Table 9. List of components See Figure13 for component layout. Component Description Value Remarks C1, C3 multilayer ceramic chip capacitor 10 F; 35 V C2, C3, C14 multilayer ceramic chip capacitor 39 pF [1] C4, C13 multilayer ceramic chip capacitor 1 nF [1] C6, C7 multilayer ceramic chip capacitor 6.8 pF [2] C5, C8, C11, C12 multilayer ceramic chip capacitor 82 pF [2] C15 electrolytic capacitor 47 F; 63 V R1 SMD resistor 56  SMD 0603 R2 metal film resistor 51  [1] American Technical Ceramics type 100B or capacitor of same quality. [2] American Technical Ceramics type 800B or capacitor of same quality. BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 9 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 9. Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT634A D A F 3 D1 U1 B q C c L 1 U2 p E1 E w1M AM BM A L 2 b w2M C M Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F L p Q q U1 U2 w1 w2 4.83 12.82 0.15 22.58 22.56 13.34 13.34 1.14 5.33 3.38 1.70 34.16 13.84 mm 27.94 0.25 0.51 3.68 12.57 0.08 22.12 22.15 13.08 13.08 0.89 4.32 3.12 1.45 33.91 13.59 0.190 0.505 0.006 0.889 0.888 0.525 0.525 0.045 0.210 0.133 0.067 1.345 0.545 inches 1.100 0.010 0.020 0.145 0.495 0.003 0.871 0.872 0.515 0.515 0.035 0.170 0.123 0.057 1.335 0.535 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 01-11-27 SOT634A 03-05-01 Fig 14. Package outline SOT634A BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 10 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description DME Distance Measuring Equipment ELM Extended Length Message JTIDS Joint Tactical Information Distribution System LDMOS Laterally Diffused Metal-Oxide Semiconductor Mode-S Mode Select RF Radio Frequency SMD Surface Mounted Device TACAN TACtical Air Navigation TCAS Traffic Collision Avoidance System VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLA6H0912-500_5 20150901 Product data sheet - BLA6H0912-500_4 Modifications: • The format of this document has been redesigned to comply with the new identity guidelines of Ampleon. • Legal texts have been adapted to the new company name where appropriate. BLA6H0912-500_4 20100510 Product data sheet - BLA6H0912-500_3 BLA6H0912-500_3 20100330 Product data sheet - BLA6H0912-500_2 BLA6H0912-500_2 20100302 Product data sheet - BLA6H0912-500_1 BLA6H0912-500_1 20090305 Objective data sheet - - BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 11 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.ampleon.com. 12.2 Definitions Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in Draft — The document is a draft version only. The content is still under such equipment or applications and therefore such inclusion and/or use is at internal review and subject to formal approval, which may result in the customer’s own risk. modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein Applications — Applications that are described herein for any of these and shall have no liability for the consequences of use of such information. products are for illustrative purposes only. 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This other industrial or intellectual property rights. document supersedes and replaces all information supplied prior to the Export control — This document as well as the item(s) described herein publication hereof. may be subject to export control regulations. Export might require a prior Suitability for use — Ampleon products are not designed, authorized or authorization from competent authorities. warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 12 of 14

BLA6H0912-500 LDMOS avionics radar power transistor Non-automotive qualified products — Unless this data sheet expressly 12.4 Trademarks states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in Notice: All referenced brands, product names, service names and trademarks accordance with automotive testing or application requirements. Ampleon are the property of their respective owners. accepts no liability for inclusion and/or use of non-automotive qualified Any reference or use of any ‘NXP’ trademark in this document or in or on the products in automotive equipment or applications. surface of Ampleon products does not result in any claim, liability or In the event that customer uses the product for design-in and use in entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of automotive applications to automotive specifications and standards, customer the NXP group of companies and any reference to or use of the ‘NXP’ (a) shall use the product without Ampleon’ warranty of the product for such trademarks will be replaced by reference to or use of Ampleon’s own Any automotive applications, use and specifications, and (b) whenever customer reference or use of any ‘NXP’ trademark in this document or in or on the uses the product for automotive applications beyond Ampleon’ specifications surface of Ampleon products does not result in any claim, liability or such use shall be solely at customer’s own risk, and (c) customer fully entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of indemnifies Ampleon for any liability, damages or failed product claims the NXP group of companies and any reference to or use of the ‘NXP’ resulting from customer design and use of the product for automotive trademarks will be replaced by reference to or use of Ampleon’s own applications beyond Ampleon’ standard warranty and Ampleon’ product trademarks. specifications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13. Contact information For more information, please visit: For sales office addresses, please visit: http://www.ampleon.com http://www.ampleon.com/sales BLA6H0912-500#5 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 05 — 1 September 2015 13 of 14

BLA6H0912-500 LDMOS avionics radar power transistor 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation . . . . . . . . . 3 7 Application information. . . . . . . . . . . . . . . . . . . 4 7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4 7.2 Performance curves. . . . . . . . . . . . . . . . . . . . . 5 7.3 Curves measured under Mode-S ELM pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 7 7.4 Curves measured under Mode-S interrogator pulse-conditions . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 10 10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © Ampleon The Netherlands B.V. 2015. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 1 September 2015 Document identifier: BLA6H0912-500#5