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  • 型号: BGA2001,115
  • 制造商: NXP Semiconductors
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ICGOO电子元器件商城为您提供BGA2001,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BGA2001,115价格参考。NXP SemiconductorsBGA2001,115封装/规格:RF 放大器, 射频放大器 IC 手机,DECT,PHS,SATV 1.8GHz CMPAK-4。您可以下载BGA2001,115参考资料、Datasheet数据手册功能说明书,资料中有BGA2001,115 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

MMIC AMPLIFIER SOT-343R射频放大器 MMAMPLIFIER

产品分类

RF 放大器

品牌

NXP Semiconductors

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

RF集成电路,射频放大器,NXP Semiconductors BGA2001,115-

数据手册

点击此处下载产品Datasheet

P1dB

- 2 dB

产品型号

BGA2001,115

PCN封装

点击此处下载产品Datasheet

RF类型

手机,DECT,PHS,SATV

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=563http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=684

产品目录页面

点击此处下载产品Datasheet

产品种类

射频放大器

供应商器件封装

CMPAK-4

其它名称

568-2062-1

功率增益类型

22 dB

包装

剪切带 (CT)

商标

NXP Semiconductors

噪声系数

1.3 dB

增益

22dB

安装风格

SMD/SMT

封装

Reel

封装/外壳

SC-82A,SOT-343

封装/箱体

SOT-343R-4

工作电源电压

2.5 V

工作频率

900 MHz to 1.8 GHz

工厂包装数量

3000

最大功率耗散

135 mW

最大工作温度

+ 150 C

标准包装

1

测试频率

900 MHz

电压-电源

4.5V

电流-电源

3mA ~ 6mA

电源电流

4.5 mA

类型

MMIC Amplifier

输出截获点

14.6 dBm

零件号别名

BGA2001 T/R

频率

1.8GHz

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PDF Datasheet 数据手册内容提取

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2001 Silicon MMIC amplifier Product specification 1999 Aug 11 Supersedes data of 1999 Jul 23

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 FEATURES PINNING  Low current, low voltage PIN DESCRIPTION  Very high power gain 1 GND  Low noise figure 2 RF in  Integrated temperature compensated biasing 3 GND  Supply and RF output pin combined. 4 V +RFout S APPLICATIONS  RF front end  Wideband applications, e.g. analog and digital cellular handbook, halfpage VS+RFout telephones, cordless telephones (PHS, DECT, etc.) 3 4  Radar detectors BIAS  Low noise amplifiers CIRCUIT  Satellite television tuners (SATV) 2 1  High frequency oscillators. Top view MAM430 RFin GND DESCRIPTION Silicon MMIC amplifier consisting of an NPN double Marking code: A1. polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R Fig.1 Simplified outline (SOT343R) and symbol. package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V DCsupply voltage RFinput AC coupled  4.5 V S I DCsupply current V =2.5V; RFinput AC coupled 4.5  mA S VS-OUT MSG maximum stable gain V =2.5V; f=1.8GHz; 19.5  dB VS-OUT T =25C amb NF noise figure V =2.5V; f=1.8GHz;  = 1.3  dB VS-OUT S opt 1999Aug11 2

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V supply voltage RF input ACcoupled  4.5 V S I supply current (DC) forced by DCvoltage on RF input  30 mA S P total power dissipation T 100C  135 mW tot s T storage temperature 65 +150 C stg T operating junction temperature  150 C j THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R thermal resistance from junction to soldering point 350 K/W thj-s CHARACTERISTICS RF input AC coupled; T =25C; unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I supply current V =1V  0.7  mA S VS-OUT V =2.5V 3 4.5 6 mA VS-OUT V =4.5V  11  mA VS-OUT MSG maximum stable gain V =2.5V;  22  dB VS-OUT I =4mA; f=900MHz VS-OUT V =2.5V;  19.5  dB VS-OUT I =4mA; f=1.8GHz VS-OUT s 2 insertion power gain V =2.5V;  18  dB 21 VS-OUT I =4mA; f=900MHz VS-OUT V =2.5V;  14  dB VS-OUT I =4mA; f=1.8GHz VS-OUT P load power at 1dB gain compression point;  2  dBm L V =2.5V; VS-OUT I =4.4mA; f=900MHz; VS-OUT NF noise figure V =2.5V;  1.3  dB VS-OUT I =4mA; f=900MHz; VS-OUT  = S opt V =2.5V;  1.3  dB VS-OUT I =4mA; f=1.8GHz; VS-OUT  = S opt IP3 input intercept point; note1 V =2.5V;  7.4  dBm (in) VS-OUT I =4.4mA; f=900MHz VS-OUT V =2.5V;  4.5  dBm VS-OUT I =4.5mA; f=1800MHz VS-OUT Note 1. See application note: RNR-T45-99-B-0513. 1999Aug11 3

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 MGS606 200 handbook, halfpage handbook, halfpage 100 pF R1 Ptot VS (mW) L1 150 C RF out GND VS-OUT 100 BGA2001 IN GND 50 C RF in MGS605 0 0 50 100 150 200 Ts (°C) Fig.2 Typical application circuit. Fig.3 Power derating curve. MGS607 MGS608 12 16 handbook, halfpage handbook, halfpage IVS-OUT IVS-OUT (mA) 10 (8) (mA) 12 (7) 8 (6) 6 (5) 8 (4) 4 (3) 4 (2) 2 (1) 0 0 −40 0 40 80 120 0 1 2 3 4 5 Tamb (°C) VVS-OUT (V) (1) VVS-OUT=1V (5) VVS-OUT=3V (2) VVS-OUT=1.5V (6) VVS-OUT=3.5V (3) VVS-OUT=2V (7) VVS-OUT=4V (4) VVS-OUT=2.5V (8) VVS-OUT=4.5V. Fig.4 Bias current (I ) as a function of Fig.5 Bias current (I ) as a function of VS-OUT VS-OUT ambient temperature with V as voltage at the output pin (V ); VS-OUT VS-OUT parameter; typical values. typical values. 1999Aug11 4

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 MGS609 MGS610 30 25 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 25 GUM 20 MSG MSG 20 GUM 15 15 10 10 5 5 0 0 0 2 4 6 8 10 0 2 4 6 8 10 IVS-OUT (mA) IVS-OUT (mA) f=900MHz. f=1800MHz. Fig.6 Gain as a function of bias current Fig.7 Gain as a function of bias current (I ); typical values. (I ); typical values. VS-OUT VS-OUT MGS611 MGS612 40 3 handbook, halfpage handNbFomoki,n halfpage gain (dB) (dB) GUM 2.5 (1) 30 MSG 2 (2) 20 1.5 (3) (4) Gmax 1 10 0.5 0 0 102 103 f (MHz) 104 10−1 1 IC (mA) 10 (1) f=2400MHz (3) f=900MHz VVS-OUT =2.5V; IVS-OUT=4mA. (2) f=1000MHz (4) f=1800MHz. Fig.8 Gain as a function of frequency; Fig.9 Minimum noise figure as a function of bias typicalvalues. current (I ); typical values. VS-OUT 1999Aug11 5

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 handbook, full pagewidth 90° unstable region 1.0 source +1 135° +0.5 +2 45° unstable 0.8 region load 0.6 0.4 +0.2 +5 (1) Γopt 0.2 (2) 180° 0 0.2 0.5 1 2 5 0° 0 (4) (3) (5) f=900MHz; VVS-OUT=2.5V; −0.2 (6) −5 IVS-OUT=4mA; Zo=50. (1) G=22dB (2) G=21dB ((34)) GNF==201.d3BdB −135° −0.5 −2 −45° (5) NF=1.5dB −1 (6) NF=1.7dB. 1.0 −90° MGS613 Fig.10 Noise, stability and gain circles; typical values. handbook, full pagewidth 90° unstable region load 1.0 unstable region +1 source 135° +0.5 +2 45° 0.8 0.6 +0.2 (1) Γopt +5 0.4 (2) 0.2 180° 0 0.2 (3) 0.5 1 (4) 2 5 0° 0 (5) (6) f=1800MHz; VVS-OUT=2.5V; −0.2 −5 IVS-OUT=4mA; Zo=50. (1) G=19dB (2) G=18dB ((34)) GNF==171.d3BdB −135° −0.5 −2 −45° (5) NF=1.5dB −1 (6) NF=1.7dB. 1.0 −90° MGS614 Fig.11 Noise, stability and gain circles; typical values. 1999Aug11 6

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 handbook, full pagewidth 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 0.2 180° 0 0.2 0.5 1 2 5 0° 0 100 MHz 3 GHz 200 MHz −0.2 −5 500 MHz 1.8 GHz 1 GHz 900 MHz −135° −0.5 −2 −45° −1 1.0 −90° MGS615 VVS-OUT=2.5V; IVS-OUT=4mA; Zo=50. Fig.12 Common emitter input reflection coefficient (s ); typical values. 11 handbook, full pagewidth 90° 135° 45° 900 MHz 1 GHz 1.8 GHz 500 MHz 3 GHz 200 MHz 100 MHz 180° 0° 10 8 6 4 2 −135° −45° −90° MGS616 VVS-OUT=2.5V; IVS-OUT=4mA; Zo=50. Fig.13 Common emitter forward transmission coefficient (s ); typical values. 21 1999Aug11 7

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 handbook, full pagewidth 90° 135° 45° 3 GHz 180°0.5 0.4 0.3 0.2 0.1 0° 100 MHz −135° −45° −90° MGS617 VVS-OUT=2.5V; IVS-OUT=4mA; Zo=50. Fig.14 Common emitter reverse transmission coefficient (s ); typical values. 12 handbook, full pagewidth 90° 1.0 +1 135° +0.5 +2 45° 0.8 0.6 0.4 +0.2 +5 0.2 180° 0 0.2 0.5 1 2 5 0° 0 100 MHz 200 MHz −0.2 3 GHz 500 MHz −5 900 MHz 1.8 GHz 1 GHz −135° −0.5 −2 −45° −1 1.0 −90° MGS618 VVS-OUT=2.5V; IVS-OUT=4mA; Zo=50. Fig.15 Common emitter output reflection coefficient (s ); typical values. 22 1999Aug11 8

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads SOT343R D B E A X y HE v M A e 3 4 Q A A1 c 2 1 w M B bp b1 Lp e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp b1 c D E e e1 HE Lp Q v w y 1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 1.15 0.2 0.2 0.1 0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-05-21 SOT343R 06-03-16 1999Aug11 9

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. DEFINITIONS Right to make changes  NXP Semiconductors reserves the right to make changes to information Product specification  The information and data published in this document, including without limitation provided in a Product data sheet shall define the specifications and product descriptions, at any time and specification of the product as agreed between NXP without notice. This document supersedes and replaces all Semiconductors and its customer, unless NXP information supplied prior to the publication hereof. Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an Suitability for use  NXP Semiconductors products are agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or those described in the Product data sheet. equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe DISCLAIMERS property or environmental damage. NXP Semiconductors Limited warranty and liability  Information in this accepts no liability for inclusion and/or use of NXP document is believed to be accurate and reliable. Semiconductors products in such equipment or However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at representations or warranties, expressed or implied, as to the customer’s own risk. the accuracy or completeness of such information and Applications  Applications that are described herein for shall have no liability for the consequences of use of such any of these products are for illustrative purposes only. information. NXP Semiconductors makes no representation or In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the indirect, incidental, punitive, special or consequential specified use without further testing or modification. damages (including - without limitation - lost profits, lost Customers are responsible for the design and operation of savings, business interruption, costs related to the their applications and products using NXP removal or replacement of any products or rework Semiconductors products, and NXP Semiconductors charges) whether or not such damages are based on tort accepts no liability for any assistance with applications or (including negligence), warranty, breach of contract or any customer product design. It is customer’s sole other legal theory. responsibility to determine whether the NXP Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the for any reason whatsoever, NXP Semiconductors’ customer’s applications and products planned, as well as aggregate and cumulative liability towards customer for for the planned application and use of customer’s third the products described herein shall be limited in party customer(s). Customers should provide appropriate accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks sale of NXP Semiconductors. associated with their applications and products. 1999Aug11 10

NXP Semiconductors Product specification Silicon MMIC amplifier BGA2001 NXP Semiconductors does not accept any liability related Export control  This document as well as the item(s) to any default, damage, costs or problem which is based described herein may be subject to export control on any weakness or default in the customer’s applications regulations. Export might require a prior authorization from or products, or the application or use by customer’s third national authorities. party customer(s). Customer is responsible for doing all Quick reference data  The Quick reference data is an necessary testing for the customer’s applications and extract of the product data given in the Limiting values and products using NXP Semiconductors products in order to Characteristics sections of this document, and as such is avoid a default of the applications and the products or of not complete, exhaustive or legally binding. the application or use by customer’s third party customer(s). NXP does not accept any liability in this Non-automotive qualified products  Unless this data respect. sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the Limiting values  Stress above one or more limiting product is not suitable for automotive use. It is neither values (as defined in the Absolute Maximum Ratings qualified nor tested in accordance with automotive testing System of IEC60134) will cause permanent damage to or application requirements. NXP Semiconductors accepts the device. Limiting values are stress ratings only and no liability for inclusion and/or use of non-automotive (proper) operation of the device at these or any other qualified products in automotive equipment or conditions above those given in the Recommended applications. operating conditions section (if present) or the Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in Constant or repeated exposure to limiting values will and use in automotive applications to automotive permanently and irreversibly affect the quality and specifications and standards, customer (a) shall use the reliability of the device. product without NXP Semiconductors’ warranty of the product for such automotive applications, use and Terms and conditions of commercial sale  NXP specifications, and (b) whenever customer uses the Semiconductors products are sold subject to the general product for automotive applications beyond NXP terms and conditions of commercial sale, as published at Semiconductors’ specifications such use shall be solely at http://www.nxp.com/profile/terms, unless otherwise customer’s own risk, and (c) customer fully indemnifies agreed in a valid written individual agreement. In case an NXP Semiconductors for any liability, damages or failed individual agreement is concluded only the terms and product claims resulting from customer design and use of conditions of the respective agreement shall apply. NXP the product for automotive applications beyond NXP Semiconductors hereby expressly objects to applying the Semiconductors’ standard warranty and NXP customer’s general terms and conditions with regard to the Semiconductors’ product specifications. purchase of NXP Semiconductors products by customer. No offer to sell or license  Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 1999Aug11 11

NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R77/06/pp12 Date of release: 1999Aug11