BFT25A SOT23 NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to2GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features and benefits  Low current consumption (100 A to 1 mA)  Low noise figure  Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 8 V CBO voltage V collector-emitter open base - - 5 V CEO voltage I DC collector - - 6.5 mA C current P total power up to T = 165 C [1] - - 32 mW tot s dissipation h DC current gain I = 0.5mA; V = 1V 50 80 200 FE C CE f transition I = 1mA; V = 1V; 3.5 5 - GHz T C CE frequency T =25C; amb f=500MHz G maximum I =0.5 mA; V = 1 V; - 15 - dB UM C CE unilateral power T = 25 C; amb gain f=1 GHz F noise figure = ; I =0.5 mA; - 1.8 - dB opt C V = 1 V; CE T =25 C; f = 1 GHz amb = ; I =1 mA; - 2 - dB opt C V = 1 V; CE T =25 C; f = 1 GHz amb [1] T is the temperature at the soldering point of the collector tab. s

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol Code: V10 3 3 1 base 2 emitter 1 3 collector 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFT25A - plastic surface mounted package; 3leads SOT23 4. Marking Table 4. Marking Type number Marking code[1] BFT25A 34* [1] * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 8 V CBO V collector-emitter voltage open base - 5 V CEO V emitter-base voltage open collector - 2 V EBO I DC collector current - 6.5 mA C P total power dissipation up to T =165C [1] - 32 mW tot s T storage temperature 65 +150 C stg T junction temperature - 175 C j [1] T is the temperature at the soldering point of the collector tab. s BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 2 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit R from junction to soldering point [1] 260 K/W th(j-s) [1] T is the temperature at the soldering point of the collector tab. s 7. Characteristics Table 7. Characteristics T = 25 Cunless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit I collector cut-off I = 0A; V = 5V - - 50 nA CBO E CB current h DC current gain I = 0.5 mA; V = 1 V 50 80 200 FE C CE f transition I = 1 mA; V = 1 V; 3.5 5 - GHz T C CE frequency T = 25 C; amb f=500MHz C feedback I =i =0A; V =1 V; - 0.3 0.45 pF re C c CB capacitance f= 1 MHz G maximum I = 0.5mA; V = 1V; [1] - 15 - dB UM C CE unilateral power T = 25 C;f = 1GHz amb gain F noise figure = ; I =0.5 mA; - 1.8 - dB opt C V = 1 V; CE T =25C; f = 1 GHz amb = ; I =1 mA; - 2 - dB opt C V = 1 V; CE T =25C; f = 1 GHz amb [1] G is the maximum unilateral power gain, assuming S is zero and UM 12 2 S G = 10 log--------------------------2--1--------------------------dB UM 2 2 1– S 1– S  11 22 BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 3 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mbg247 mcd138 40 100 Ptot hFE (mW) 80 30 60 20 40 10 20 00 50 100 150 200 010−3 10−2 10−1 1 10 Ts (°C) IC (mA) V =1 V. CE Fig 1. Power derating curve. Fig 2. DC current gain as a function of collector current. mcd103 mcd140 0.4 6 Cre (pF) fT (GHz) 0.3 4 0.2 2 0.1 0 0 0 1 2 3 4 5 0 1 2 3 4 VCB (V) IC (mA) IC = ic=0A; f = 1 MHz. VCE=1 V; Tamb=25C; f= 500 MHz. Fig 3. Feedback capacitance as a function of Fig 4. Transition frequency as a function of collector collector-base voltage. current. Figure5, 6, 7 and 8, G =maximum unilateral power gain; MSG = maximum stable gain. UM BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 4 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mcd104 mcd105 25 20 gain GUM gain (dB) (dB) 20 GUM 15 15 MSG 10 10 MSG 5 5 0 0 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 IC (mA) IC (mA) V =1 V; f = 500 MHz. V =1 V; f = 1 GHz. CE CE Fig 5. Gain as a function of collector current. Fig 6. Gain as a function of collector current. mcd106 mcd107 50 50 gain gain (dB) (dB) 40 GUM 40 GUM 30 30 MSG 20 MSG 20 10 10 Gmax Gmax 0 0 10 102 103 104 10 102 103 104 f (MHz) f (MHz) V =1 V; I = 0.5 mA. V =1 V; I = 1 mA. CE C CE C Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency. BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 5 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor mcd145 mcd146 4 4 F F (dB) f = (dB) IC = 2 GHz 2 mA 3 3 1 GHz 500 MHz 1 mA 2 2 0.5 mA 1 1 0 0 10−1 1 10 102 103 104 IC (mA) f (MHz) V =1 V. V =1 V. CE CE Fig 9. Minimum noise figure as a function of Fig 10. Minimum noise figure as a function of collector current. frequency. 1 0.5 2 pot. unst. region 6 dB 0.2 4 dB 5 stability circle 2.5 dB 10 +j 0.2 0.5 1 2 5 10 ∞ 0 Γ opt −j MSG Fmin = 1.9 dB 10 14.5 dB 0.2 13 dB 5 11 dB 0.5 2 1 mcd108 See Table8; Zo=50 . Average gain parameter: MSG = 14.5 dB. Fig 11. Noise circle figure. BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 6 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor Table 8. Noise parameters f (MHz) V (V) I (mA) F (dB)  R /50 CE C min opt n (mag) (ang) 500 1 1 1.9 0.79 4 2.5 1 0.5 2 pot. unst. region 8 dB stability circle 0.2 4 dB 5 3 dB 10 +j 0.2 0.5 1 2 5 10 ∞ 0 MSG Γ −j 11.2 dB Fmionp =t 2 dB 10 10 dB 0.2 5 8 dB 0.5 2 1 mcd109 See Table9; Zo=50 . Average gain parameter: MSG = 11.2 dB. Fig 12. Noise circle figure. T able 9. Noise parameters f (MHz) V (V) I (mA) F (dB)  R /50 CE C min opt n (mag) (ang) 1000 1 1 2 0.74 8 2.6 BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 7 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor pot. unst. 1 stability region circle 0.5 2 MSG 7.7 dB 0.2 7 dB Γopt 5 Fmin = 2.4 dB 10 +j 3 dB 0.2 0.5 1 2 5 10 ∞ 0 −j 5 dB 4 dB 10 6 dB 0.2 5 0.5 2 1 mcd110 See Table10; Zo=50 . Average gain parameter: MSG = 7.7 dB. Fig 13. Noise circle figure. T able 10. Noise parameters f (MHz) V (V) I (mA) F (dB)  R /50 CE C min opt n (mag) (ang) 2000 1 1 2.4 0.72 26 1.7 BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 8 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 1 0.5 2 0.2 5 10 +j 0.2 0.5 1 2 5 10 ∞ 0 40 MHz −j 3 GHz 10 0.2 5 0.5 2 1 mcd111 V =1 V; I =1 mA. CE C Zo = 50 . Fig 14. Common emitter input reflection coefficient (S ). 11 90° 135° 45° 3 GHz 40 MHz 180° 0° 5 4 3 2 1 0 −135° −45° −90° mcd112 V =1 V; I =1 mA. CE C Fig 15. Common emitter forward transmission coefficient (S ). 21 BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 9 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 90° 135° 45° 3 GHz 40 MHz 180° 0° 0.5 0.4 0.3 0.2 0.1 0 −135° −45° −90° mcd114 V =1 V; I =1 mA. CE C Fig 16. Common emitter reverse transmission coefficient (S ). 12 1 0.5 2 0.2 5 10 +j 0.2 0.5 1 2 5 10 ∞ 0 −j 40 MHz 10 0.2 3 GHz 5 0.5 2 1 mcd113 V =1 V; I =1 mA. CE C Zo = 50 . Fig 17. Common emitter output reflection coefficient (S ). 22 BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 10 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 8. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 Fig 18. Package outline. BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 11 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 9. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BFT25A v.5 20110912 Product data sheet - BFT25A v.4 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Package outline drawings have been updated to the latest version. BFT25A v.4 20040706 Product data sheet - BFT25A_CNV v.3 (9397 750 13399) BFT25A_CNV v.3 19971205 Product specification - - BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 12 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 10.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft — The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these information included herein and shall have no liability for the consequences of products are for illustrative purposes only. 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However, NXP Semiconductors does not give any the Absolute Maximum Ratings System of IEC60134) will cause permanent representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper) completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in consequences of use of such information. the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or In no event shall NXP Semiconductors be liable for any indirect, incidental, repeated exposure to limiting values will permanently and irreversibly affect punitive, special or consequential damages (including - without limitation - lost the quality and reliability of the device. profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — NXP Semiconductors damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial contract or any other legal theory. sale, as published at http://www.nxp.com/profile/terms, unless otherwise Notwithstanding any damages that customer might incur for any reason agreed in a valid written individual agreement. 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This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or to the publication hereof. other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior safety-critical systems or equipment, nor in applications where failure or authorization from national authorities. BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 13 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor Quick reference data — The Quick reference data is an extract of the product for such automotive applications, use and specifications, and (b) product data given in the Limiting values and Characteristics sections of this whenever customer uses the product for automotive applications beyond document, and as such is not complete, exhaustive or legally binding. NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Non-automotive qualified products — Unless this data sheet expressly liability, damages or failed product claims resulting from customer design and states that this specific NXP Semiconductors product is automotive qualified, use of the product for automotive applications beyond NXP Semiconductors’ the product is not suitable for automotive use. It is neither qualified nor tested standard warranty and NXP Semiconductors’ product specifications. in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 10.4 Trademarks In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer Notice: All referenced brands, product names, service names and trademarks (a) shall use the product without NXP Semiconductors’ warranty of the are the property of their respective owners. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFT25A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 — 12 September 2011 14 of 15

BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 12. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1 1.3 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 11 9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 11 Contact information. . . . . . . . . . . . . . . . . . . . . 14 12 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 September 2011 Document identifier: BFT25A

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