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BFS19,215产品简介:
ICGOO电子元器件商城为您提供BFS19,215由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BFS19,215价格参考¥0.34-¥0.34。NXP SemiconductorsBFS19,215封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 20V 30mA 260MHz 250mW 表面贴装 TO-236AB(SOT23)。您可以下载BFS19,215参考资料、Datasheet数据手册功能说明书,资料中有BFS19,215 详细功能的应用电路图电压和使用方法及教程。
Nexperia USA Inc. 生产的 BFS19 和 2N15 晶体管是双极型晶体管 (BJT),广泛应用于各种电子电路中。以下是这些型号的应用场景: BFS19 晶体管应用场景 1. 射频 (RF) 放大器: - BFS19 是一种高频 NPN 晶体管,适用于射频放大器和混频器电路。它的工作频率范围高达 1.2 GHz,因此在无线通信设备、无线电接收机和发射机中表现出色。 2. 振荡器电路: - 由于其高增益和低噪声特性,BFS19 常用于构建高频振荡器,如本振电路和时钟生成电路,确保稳定的信号输出。 3. 开关应用: - 在高速开关电路中,BFS19 可以用作开关元件,例如在脉宽调制 (PWM) 控制器或数字逻辑电路中,实现快速的开关操作。 4. 混频器: - BFS19 的高频性能使其适合用于混频器电路,将两个不同频率的信号混合在一起,产生新的频率分量,常用于通信系统的前端处理。 2N15 晶体管应用场景 1. 音频放大器: - 2N15 是一种通用的 NPN 晶体管,适用于低频至中频的音频放大器。它可以用于前置放大器、功率放大器等,提供稳定的增益和低失真。 2. 传感器接口: - 在传感器接口电路中,2N15 可以用作信号调理元件,将微弱的传感器信号放大到可处理的电平,适用于温度、压力、光敏等传感器。 3. 线性稳压器: - 2N15 可以作为线性稳压器中的关键元件,帮助稳定输出电压,确保电源系统的稳定性,适用于小型电子设备和嵌入式系统。 4. 电机驱动: - 在低功耗电机驱动电路中,2N15 可以用作开关元件,控制电机的启动和停止,适用于小型直流电机或步进电机。 总的来说,BFS19 和 2N15 晶体管因其不同的频率特性和应用范围,在射频、音频、传感器接口和电源管理等多个领域都有广泛应用。选择合适的晶体管型号取决于具体的应用需求和技术参数。
参数 | 数值 |
产品目录 | |
描述 | TRANS NPN 20V 30MA SOT23射频双极晶体管 TRANS MED FREQ |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,晶体管射频,射频双极晶体管,NXP Semiconductors BFS19,215- |
数据手册 | |
产品型号 | BFS19,215 |
PCN封装 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | - |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 65 @ 1mA,10V |
产品种类 | 射频双极晶体管 |
供应商器件封装 | SOT-23 (TO-236AB) |
其它名称 | 568-6868-2 |
功率-最大值 | 250mW |
功率耗散 | 250 mW |
包装 | 带卷 (TR) |
发射极-基极电压VEBO | 5 V |
商标 | NXP Semiconductors |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
技术 | Silicon |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大工作温度 | + 150 C |
最大工作频率 | 260 MHz |
最大直流电集电极电流 | 0.03 A |
最小工作温度 | - 65 C |
标准包装 | 3,000 |
特色产品 | http://www.digikey.com/cn/zh/ph/NXP/I2C.html |
电压-集射极击穿(最大值) | 20V |
电流-集电极(Ic)(最大值) | 30mA |
电流-集电极截止(最大值) | 100nA(ICBO) |
类型 | RF Bipolar Small Signal |
配置 | Single |
集电极—发射极最大电压VCEO | 20 V |
集电极连续电流 | 0.03 A |
零件号别名 | BFS19 T/R |
频率 | 260 MHz |
频率-跃迁 | 260MHz |
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
DISCRETE SEMICONDUCTORS DATA SHEET BFS19 NPN medium frequency transistor Product data sheet 2004 Jan 05 Supersedes data of 1999 Apr 15
NXP Semiconductors Product data sheet NPN medium frequency transistor BFS19 FEATURES PINNING • IC(max) = 25 mA PIN DESCRIPTION • V = 20 V. CEO(max) 1 base 2 emitter APPLICATIONS 3 collector • Medium frequency applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic handbook, halfpage 3 package. 3 1 MARKING TYPE NUMBER MARKING CODE(1) 2 1 2 BFS19 F2* Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BFS19 − plastic surface mounted package; 3 leads SOT23 2004 Jan 05 2
NXP Semiconductors Product data sheet NPN medium frequency transistor BFS19 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − 30 V CBO V collector-emitter voltage open base − 20 V CEO V emitter-base voltage open collector − 5 V EBO I collector current (DC) − 30 mA C I peak collector current − 30 mA CM P total power dissipation T ≤ 25 °C; note 1 − 250 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004 Jan 05 3
NXP Semiconductors Product data sheet NPN medium frequency transistor BFS19 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 500 K/W th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T = 25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = 20 V − − 100 nA CBO E CB I = 0; V = 20 V; T = 100 °C − − 10 µA E CB j I emitter cut-off current I = 0; V = 5 V − − 100 nA EBO C EB h DC current gain I = 1 mA; V = 10 V 65 − 225 FE C CE V base-emitter voltage I = 1 mA; V = 10 V 650 − 740 mV BE C CE C collector capacitance I = 0; V = 10 V; f = 1 MHz − 1 − pF c E CB C feedback capacitance I = 0 mA; V = 10 V; f = 1 MHz − 0.85 − pF re C CB f transition frequency I = 1 mA; V = 10 V; f = 100 MHz − 260 − MHz T C CE 2004 Jan 05 4
NXP Semiconductors Product data sheet NPN medium frequency transistor BFS19 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 2004 Jan 05 5
NXP Semiconductors Product data sheet NPN medium frequency transistor BFS19 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Jan 05 6
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 05 Document order number: 9397 750 12417