BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name -NXPSemiconductors,whichwillbeusedinfuturedatasheetstogetherwithnewcontact details. IndatasheetswherethepreviousPhilipsreferencesremain,pleaseusethenewlinksas shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated handbook, 2 columns 3 • Gold metallization ensures in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal excellent reliability as the SOT23 version, BFR92A. • SOT323 (S-mini) package. PINNING APPLICATIONS 1 2 PIN DESCRIPTION It is designed for use in RF amplifiers, Top view MBC870 mixers and oscillators with signal 1 base Marking code: P2. frequencies up to 1GHz. 2 emitter Fig.1 SOT323 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter - - 20 V CBO V collector-emitter voltage open base - - 15 V CEO I collector current (DC) - - 25 mA C P total power dissipation up to T =93(cid:176) C; note1 - - 300 mW tot s hFE current gain IC=15mA; VCE=10V 65 90 135 C feedback capacitance I =0; V =10V; f=1MHz; - 0.35 - pF re C CE T =25(cid:176) C amb f transition frequency I =15mA; V =10V; f=500MHz 3.5 5 - GHz T C CE G maximum unilateral power I =15mA; V =10V; f=1GHz; - 14 - dB UM C CE gain T =25(cid:176) C amb I =15mA; V =10V; f=2GHz; - 8 - dB C CE T =25(cid:176) C amb F noise figure I =5mA; V =10V; f=1GHz; - 2 - dB C CE G =G s opt T junction temperature - - 150 (cid:176) C j Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 03 - 12 March 2008 2 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 2 V EBO I collector current (DC) - 25 mA C P total power dissipation up to T =93(cid:176) C; seeFig.2; note1 - 300 mW tot s T storage temperature - 65 +150 (cid:176) C stg T junction temperature - 150 (cid:176) C j THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to up to T =93(cid:176) C; note1 190 K/W thj-s s soldering point Note to the Limiting values and Thermal characteristics 1. T is the temperature at the soldering point of the collector pin. s MLB540 400 Ptot (mW) 300 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve Rev. 03 - 12 March 2008 3 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW CHARACTERISTICS T =25(cid:176) C (unless otherwise specified). j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector leakage current I =0; V =10V - - 50 nA CBO E CB hFE DC current gain IC=15mA; VCE=10V 65 90 135 C collector capacitance I =i =0; V =10V; f=1MHz - 0.6 - pF c E e CB C emitter capacitance I =i =0; V =0.5V; f=1MHz - 0.9 - pF e C c EB C feedback capacitance I =0; V =10V; f=1MHz - 0.35 - pF re C CE f transition frequency I =15mA; V =10V; f=500MHz 3.5 5 - GHz T C CE G maximum unilateral power I =15mA; V =10V; - 14 - dB UM C CE gain; note1 f=1GHz; T =25(cid:176) C amb I =15mA; V =10V; - 8 - dB C CE f=2GHz; T =25(cid:176) C amb F noise figure I =5mA; V =10V; - 2 - dB C CE f=1GHz;G =G s opt I =5mA; V =10V; - 3 - dB C CE f=2GHz;G =G s opt Note s 2 1. G is the maximum unilateral power gain, assuming s is zero and G = 10 log-----------------------------2--1----------------------------- dB. UM 12 UM (1– s 2) (1– s 2) 11 22 Rev. 03 - 12 March 2008 4 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC883 MCD074 1.0 120 handbook, halfpage Cre (pF) hFE 0.8 80 0.6 0.4 40 0.2 0 0 0 4 8 12 16 20 0 10 20 30 I C (mA) V C B (V) VCE=10V. IC=0; f=1MHz. Fig.3 DC current gain as a function of collector Fig.4 Feedback capacitance as a function of current; typical values. collector-base voltage; typical values. MGC884 6 handbook, halfpage f T (GHz) 4 2 0 1 10 I C (mA) 102 VCE=5V; f=500MHz; Tamb=25(cid:176)C. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 03 - 12 March 2008 5 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC885 MGC886 30 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 G UM MSG G UM 10 10 0 0 0 5 10 15 20 0 5 10 15 20 I C (mA) I C (mA) VCE=10V;f=500MHz. VCE=10V;f=1GHz. Fig.6 Gain as a function of collector current; Fig.7 Gain as a function of collector current; typical values. typical values. MGC887 MGC888 50 50 handbook, halfpage handbook, halfpage gain gain (dB) GUM (dB) GUM 40 40 MSG MSG 30 30 20 20 10 10 Gmax Gmax 0 0 10 102 103 104 10 102 103 104 f (MHz) f (MHz) VCE=10V;IC=5mA. VCE=10V;IC=15mA. Fig.8 Gain as a function of frequency; Fig.9 Gain as a function of frequency; typical values. typical values. Rev. 03 - 12 March 2008 6 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW MGC889 MGC890 6 6 handbook, halfpage handbook, halfpage F F (dB) (dB) f = 2 GHz 4 4 I = 15 mA C 1 GHz 10 mA 500 MHz 5 mA 2 2 0 0 1 10 I C (mA) 102 102 103 f (MHz) 104 VCE=10V. VCE=10V. Fig.10 Minimum noise figure as a function of Fig.11 Minimum noise figure as a function of collector current; typical values. frequency; typical values. 90o handbook, full pagewidth 1.0 1 135o F = 4 dB 45o 0.8 0.5 2 F = 3 dB 0.6 F = 2 dB 0.4 0.2 5 F m in = 1.6 dB 0.2 G opt 0.2 0.5 1 2 5 180o 0 0o 0 0.2 5 0.5 2 135o 45o 1 MGC891 1.0 90o f=500MHz; VCE=10V; IC=5mA; Zo=50W . Fig.12 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 7 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90o handbook, full pagewidth 1.0 1 135o 45o 0.8 0.5 2 0.6 (4) (2) (3) 0.4 0.2 5 (5) (1) 0.2 (6) 0.2 0.5 1 2 5 180o 0 0o 0 (7) (8) (1) G opt; Fmin=2.1dB. 0.2 5 (2) F=2.5dB. (3) F=3dB. (4) F=4dB. 0.5 2 (5) G ms;Gmax=15.7dB. 135o 45o (6) G=15dB. 1 (7) G=14dB. MGC892 1.0 (8) G=13dB. 90o f=1GHz; VCE=10V; IC=5mA; Zo=50W. Fig.13 Common emitter noise figure circles; typical values. 90o handbook, full pagewidth 1.0 1 135o 45o 0.8 0.5 2 (4) 0.6 (3) (2) 0.4 0.2 5 0.2 (1) 0.2 0.5 1 2 5 180o 0 0o 0 (5) 0.2 5 (6) (1) G opt; Fmin=3dB. (7) (2) F=3.5dB. (3) F=4dB. (8) 0.5 2 (4) F=5dB. 135o 45o (5) G ms;Gmax=9.1dB. 1 (6) G=8dB. MGC893 1.0 (7) G=7dB. 90o (8) G=6dB. f=2GHz; VCE=10V; IC=5mA; Zo=50W. Fig.14 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 8 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90o handbook, full pagewidth 1.0 1 135o 45o 0.8 0.5 2 0.6 0.4 0.2 5 3 GHz 0.2 0.2 0.5 1 2 5 180o 0 0o 0 40 MHz 0.2 5 0.5 2 135o 45o 1 MGC894 1.0 90o VCE=10V; IC=15mA; Zo=50W . Fig.15 Common emitter input reflection coefficient (s ); typical values. 11 90o handbook, full pagewidth 135o 45o 40 MHz 180o 3 GHz 0o 50 40 30 20 10 135o 45o 90o MGC895 VCE=10V; IC=15mA. Fig.16 Common emitter forward transmission coefficient (s ); typical values. 21 Rev. 03 - 12 March 2008 9 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, full pagewidth 90o 3 GHz 135o 45o 40 MHz 180o 0o 0.25 0.20 0.15 0.10 0.05 135o 45o 90o MGC896 VCE=10V; IC=15mA. Fig.17 Common emitter reverse transmission coefficient (s ); typical values. 12 90o handbook, full pagewidth 1.0 1 135o 45o 0.8 0.5 2 0.6 0.4 0.2 5 0.2 0.2 0.5 1 2 5 180o 0 0o 0 40 MHz 0.2 3 GHz 5 0.5 2 135o 45o 1 MGC897 1.0 90o VCE=10V; IC=15mA; Zo=50W . Fig.18 Common emitter output reflection coefficient (s ); typical values. 22 Rev. 03 - 12 March 2008 10 of 13

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW PACKAGE OUTLINE 2.2 1.35 A B handbook, full pagewidth 1.8 1.15 X 0.25 0.10 2.2 0.2 M B 2.0 3 0.2 1.0 1.1 0.8 0.1 max 0.0 1 0.40 2 0.30 0.2 M A 0.3 0.65 0.1 detail X MBC871 1.3 Dimensions in mm. Fig.19 SOT323. Rev. 03 - 12 March 2008 11 of 13

BFR92AW NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Rev. 03 - 12 March 2008 12 of 13

BFR92AW NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFR92AW_N_3 20080312 Product data sheet - BFR92AW_2 Modifications: • Quick reference data and Characteristics Table; DC current gain value changed BFR92AW_2 19950918 Product specification - BFR92AW_1 BFR92AW_1 19921001 - - - Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 March 2008 Document identifier: BFR92AW_N_3