BFR92A NPN 5 GHz wideband transistor Rev. 04 — 2 March 2009 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name -NXPSemiconductors,whichwillbeusedinfuturedatasheetstogetherwithnewcontact details. IndatasheetswherethepreviousPhilipsreferencesremain,pleaseusethenewlinksas shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A FEATURES DESCRIPTION • High power gain NPN wideband transistor in a plastic page 3 • Low noise figure SOT23 package. PNP complement: BFT92. • Low intermodulation distortion. PINNING 1 2 APPLICATIONS • RF wideband amplifiers and PIN DESCRIPTION Top view MSB003 oscillators. 1 base Marking code: P2%. 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage - 20 V CBO V collector-emitter voltage - 15 V CEO I collector current (DC) - 25 mA C P total power dissipation T £ 95(cid:176) C - 300 mW tot s C feedback capacitance I =i =0; V =10V; f=1MHz 0.35 - pF re C c CE f transition frequency I =15mA; V =10V; f=500MHz 5 - GHz T C CE G maximum unilateral power gain I =15mA; V =10V; f=1GHz; 14 - dB UM C CE T =25(cid:176) C amb I =15mA; V =10V; f=2GHz; 8 - dB C CE T =25(cid:176) C amb F noise figure I =5mA; V =10V; f=1GHz; 2.1 - dB C CE G =G ; T =25(cid:176) C s opt amb V output voltage d =- 60dB; I =14mA; V =10V; 150 - mV O im C CE R =75W ;f +f - f =793.25MHz L p q r LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 2 V EBO I collector current (DC) - 25 mA C P total power dissipation T £ 95(cid:176) C; note1; seeFig.3 - 300 mW tot s T storage temperature - 65 +150 (cid:176) C stg T junction temperature - 175 (cid:176) C j Note 1. T is the temperature at the soldering point of the collector pin. s Rev. 04 - 2 March 2009 2 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to soldering point T £ 95(cid:176) C; note1 260 K/W th j-s s Note 1. T is the temperature at the soldering point of the collector pin. s CHARACTERISTICS T =25(cid:176) C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector leakage current I =0; V =10V - - 50 nA CBO E CB hFE DC current gain IC=15mA; VCE=10V; seeFig.4 65 90 135 C collector capacitance I =i =0; V =10V; f=1MHz; - 0.6 - pF c E e CB seeFig.5 C emitter capacitance I =i =0; V =10V; f=1MHz - 1.2 - pF e C c EB C feedback capacitance I =i =0; V =10V; f=1MHz - 0.35 - pF re C c CE f transition frequency I =15mA; V =10V; f=500MHz; - 5 - GHz T C CE seeFig.6 G maximum unilateral power I =15mA; V =10V; f=1GHz; - 14 - dB UM C CE gain (note1) T =25(cid:176) C amb I =15mA; V =10V; f=2GHz; - 8 - dB C CE T =25(cid:176) C amb F noise figure I =5mA; V =10V; f=1GHz; - 2.1 - dB C CE G =G ; T =25(cid:176) C; s opt amb seeFigs13and14 I =5mA; V =10V; f=2GHz; - 3 - dB C CE G =G ; T =25(cid:176) C; s opt amb seeFigs13and14 V output voltage notes2and3 - 150 - mV O d second order intermodulation notes2and4; seeFig.16 - - 50 - dB 2 distortion Notes 2 S 1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log-(cid:230)-------------------------2(cid:246)----2--(cid:230)-1-------------------------2(cid:246)----dB˙. Ł 1– S ł Ł 1– S ł 11 22 2. Measured on the same die in a SOT37 package (BFR90A). 3. d =- 60dB (DIN45004B); I =14mA; V =10V; R =75W ; VSWR<2; T =25(cid:176) C im C CE L amb V =V at d =- 60dB; f =795.25MHz; p O im p V =V - 6dB; f =803.25MHz; q O q V =V - 6dB; f =805.25MHz; r O r measured at f +f - f =793.25MHz. p q r 4. I =14mA; V =10V; R =75W ; VSWR<2; T =25(cid:176) C C CE L amb V =60mV at f =250MHz; p p V =60mV at f =560MHz; q q measured at f +f =810MHz. p q Rev. 04 - 2 March 2009 3 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A handbook, full pagewidth 2.2 nF 2.2 nF VCC VBB L3 33 kW L2 1 nF 1 nF 75 W L1 300 W DUT output 1 nF 75 W input 3.3 pF 18 W 0.82 pF MBB269 L1=L3=5m H choke. L2=3turns0.4mm copper wire, internal diameter 3mm, winding pitch 1mm. Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit. MEA425 - 1 MCD074 400 120 handbook, halfpage handbook, halfpage P tot (mW) hFE 300 80 200 40 100 0 0 0 50 100 150 T (oC)200 0 10 20 I C (mA) 30 s VCE=10V; Tj=25(cid:176)C. Fig.4 DC current gain as a function of collector Fig.3 Power derating curve. current; typical values. Rev. 04 - 2 March 2009 4 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB274 MBB275 1 6 handbook, halfpage handbook, halfpage Cc (pF) fT 0.8 (GHz) 4 0.6 0.4 2 0.2 0 0 0 5 10 15 20 0 10 20 30 VCB (V) I C (mA) IC=ic=0; f=1MHz; Tj=25(cid:176)C. VCE=10V; f=500MHz; Tamb=25(cid:176)C. Fig.5 Collector capacitance as a function of Fig.6 Transition frequency as a function of collector-base voltage; typical values. collector current; typical values. MBB278 MBB279 30 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG 20 20 MSG GUM GUM 10 10 0 0 0 5 10 15 20 25 0 5 10 15 20 25 IC (mA) I C (mA) VCE=10V; f=500MHz. VCE=10V; f=1GHz. MSG=maximum stable gain; MSG=maximum stable gain; GUM=maximum unilateral power gain. GUM=maximum unilateral power gain. Fig.7 Gain as a function of collector current; Fig.8 Gain as a function of collector current; typical values. typical values. Rev. 04 - 2 March 2009 5 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MBB280 MBB281 50 50 handbook, halfpage handbook, halfpage gain gain (dB) (dB) 40 40 GUM GUM 30 30 MSG MSG 20 20 Gmax 10 Gmax 10 0 0 10 102 103 104 10 102 103 104 f (MHz) f (MHz) IC=5mA; VCE=10V. IC=15mA; VCE=10V. GUM=maximum unilateral power gain; MSG=maximum stable gain; GUM=maximum unilateral power gain; MSG=maximum stable gain; Gmax=maximum available gain. Gmax=maximum available gain. Fig.9 Gain as a function of frequency; Fig.10 Gain as a function of frequency; typical values. typical values. MBB277 MBB276 40 30 handbook, halfpage handBbSook, halfpage BS (mS) F = 3.5 dB (mS) 20 20 3.0 F = 3.0 dB 10 2.5 2.5 0 0 2.0 1.8 2.4 1.7 10 20 20 40 30 0 20 40 60 80 0 20 40 60 G S (mS) G S (mS) IC=4mA; VCE=10V; f=800MHz. IC=14mA; VCE=10V; f=800MHz. Fig.11 Circles of constant noise figure; Fig.12 Circles of constant noise figure; typical values. typical values. Rev. 04 - 2 March 2009 6 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A MCD081 MCD082 4 4 handbook, halfpage handbook, halfpage f = 2 GHz I C = 15 mA F F (dB) (dB) 10 mA 3 3 5 mA 1 GHz 500 MHz 2 2 1 1 0 0 1 10 I C (mA) 102 102 103 f (MHz) 104 VCE=10V. VCE=10V. Fig.13 Minimum noise figure as a function of Fig.14 Minimum noise figure as a function of collector current; typical values. frequency; typical values. MBB282 MBB283 - 45 - 35 handbook, halfpage handbook, halfpage dim d2 (dB) (dB) - 50 - 40 - 55 - 45 - 60 - 50 - 65 - 55 - 70 - 60 10 20 I C (mA) 30 10 20 I C (mA) 30 VCE=10V; VO=150mV (43.5dBmV); fp+fq- fr=793.25MHz; Tamb=25(cid:176)C. VCE=10V; VO=60mV; fp+fq- fr=810MHz; Tamb=25(cid:176)C. Measured in MATV test circuit (seeFig.2). Measured in MATV test circuit (seeFig.2). Fig.15 Intermodulation distortion; Fig.16 Second order intermodulation distortion; typical values. typical values. Rev. 04 - 2 March 2009 7 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A handbook, full pagewidth 1 0.5 2 0.2 5 10 + j 1200 0.2 0.5 1 2 5 10 ¥ 0 - j 1000 800 500 10 200 0.2 5 100 MHz 0.5 2 MBB270 1 IC=14mA; VCE=10V; Zo=50W ; Tamb=25(cid:176)C. Fig.17 Common emitter input reflection coefficient (S ); typical values. 11 handbook, full pagewidth 90(cid:176) 120(cid:176) 60(cid:176) 100 150(cid:176) MHz 200 30(cid:176) 500 800 + j 1000 1200 10 20 30 180(cid:176) 0(cid:176) - j 150(cid:176) 30(cid:176) 120(cid:176) 60(cid:176) 90(cid:176) MBB273 IC=14mA; VCE=10V; Tamb=25(cid:176)C. Fig.18 Common emitter forward transmission coefficient (S ); typical values. 21 Rev. 04 - 2 March 2009 8 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A handbook, full pagewidth 90(cid:176) 120(cid:176) 60(cid:176) 1200 MHz 150(cid:176) typ 1000 30(cid:176) 800 500 200 + j 100 0.05 0.1 0.15 180(cid:176) 0(cid:176) - j 150(cid:176) 30(cid:176) 120(cid:176) 60(cid:176) 90(cid:176) MBB271 IC=14mA; VCE=10V; Tamb=25(cid:176)C. Fig.19 Common emitter reverse transmission coefficient (S ); typical values. 12 1 handbook, full pagewidth 0.5 2 0.2 5 10 + j 0.2 0.5 1 2 5 10 ¥ 00 - j 1000 800 500 10 1200 100 200 MHz 0.2 5 0.5 2 MBB272 1 IC=14mA; VCE=10V; Zo=50W ; Tamb=25(cid:176)C. Fig.20 Common emitter output reflection coefficient (S ); typical values. 22 Rev. 04 - 2 March 2009 9 of 12

NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92A PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT23 97-02-28 Rev. 04 - 2 March 2009 10 of 12

BFR92A NXP Semiconductors NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Rev. 04 - 2 March 2009 11 of 12

BFR92A NXP Semiconductors NPN 5 GHz wideband transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BFR92A_N_4 20090302 Product data sheet - BFR92A_N_3 Modifications: • Fig.1 on page 2; Figure note changed BFR92A_N_3 20080307 Product data sheet - BFR92A_2 BFR92A_2 19971029 Product specification - BFR92A_1 (9397 750 02766) BFR92A_1 19950901 - - - Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 2 March 2009 Document identifier: BFR92A_N_4