BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages 3 • Based on Infineon' s reliable high volume Silicon 2 4 1 Germanium technology • High OIP3 and P -1dB • Ideal for low phase noise oscilators • Maxim. available Gain G = 21.5 dB at 1.8 GHz ma Minimun noise figure NF = 0.8 dB at 1.8 GHz min • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available Top View 4 3 XYs 1 2 Direction of Unreeling ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP650F R5s 1=B 2=E 3=C 4=E - - TSFP-4 1 2013-09-06

BFP650F Maximum Ratings at T = 25 °C, unless otherwise specified A Parameter Symbol Value Unit Collector-emitter voltage V V CEO T = 25 °C 4 A T =-55 °C 3.7 A Collector-emitter voltage V 13 CES Collector-base voltage V 13 CBO Emitter-base voltage V 1.2 EBO Collector current I 150 mA C Base current I 10 B Total power dissipation1) P 500 mW tot T ≤ 85°C S Junction temperature T 150 °C J Storage temperature T -55 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) R 130 K/W thJS Electrical Characteristics at T = 25 °C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 4 4.5 - V (BR)CEO I = 3 mA, I = 0 C B Collector-emitter cutoff current I - - 100 µA CES V = 13 V, V = 0 CE BE Collector-base cutoff current I - - 100 nA CBO V = 5 V, I = 0 CB E Emitter-base cutoff current I - - 10 µA EBO V = 0.5 V, I = 0 EB C DC current gain h 110 180 270 - FE I = 80 mA, V = 3 V, pulse measured C CE 1T is measured on the emitter lead at the soldering point to the pcb S 2For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJS 2 2013-09-06

BFP650F Electrical Characteristics at T = 25 °C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f - 42 - GHz T I = 80 mA, V = 3 V, f = 1 GHz C CE Collector-base capacitance C - 0.26 - pF cb V = 3 V, f = 1 MHz, V = 0 , CB BE emitter grounded Collector emitter capacitance C - 0.45 - ce V = 3 V, f = 1 MHz, V = 0 , CE BE base grounded Emitter-base capacitance C - 1.3 - eb V = 0.5 V, f = 1 MHz, V = 0 , EB CB collector grounded Minimum noise figure NF dB min I = 10 mA, V = 3 V, f = 1.8 GHz, Z = Z - 0.8 - C CE S Sopt I = 10 mA, V = 3 V, f = 6 GHz, Z = Z - 1.9 - C CE S Sopt Power gain, maximum available1) G ma I = 80 mA, V = 3 V, Z = Z Z = Z , C CE S Sopt, L Lopt f = 1.8 GHz - 21.5 - f = 6 GHz - 11 - Transducer gain |S |2 dB 21e I = 80 mA, V = 3 V, Z = Z = 50 Ω, C CE S L f = 1.8 GHz 15 17.5 - f = 6 GHz - 7.5 - Third order intercept point at output2) IP3 - 31 - dBm V = 3 V, I = 80 mA, f = 1.8 GHz, CE C Z = Z = 50 Ω S L 1dB compression point at output P - 17.5 - -1dB I = 80 mA, V = 3 V, Z = Z = 50 Ω, C CE S L f = 1.8 GHz 1G = |S / S | (k-(k²-1)1/2) ma 21e 12e 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2013-09-06

BFP650F Total power dissipation P = ƒ(T ) Collector-base capacitance C = ƒ (V ) tot S cb CB f = 1 MHz 550 0.8 500 0.7 450 0.6 400 350 0.5 Ptot [mW] 235000 C [pF]cb0.4 200 0.3 150 0.2 100 0.1 50 0 0 0 15 30 45 60 75 90 105 120 135 150 0 1 2 3 4 5 6 7 8 9 10 T [°C] V [V] S CB Transition frequency f = ƒ(I ) Power gain G , G = ƒ (f) T C ma ms V = parameter in V, f = 1 GHz V = 3 V, I = 80 mA CE CE C 45 50 40 45 40 35 3.00V 35 30 G ms 30 25 Hz] B] f [GT20 G [d 25 20 2.00V |S |2 Gma 15 21 15 10 10 5 1.00V 5 0.50V 0 0 0 20 40 60 80 100 120 140 160 180 0 1 2 3 4 5 6 I [mA] f [GHz] C 4 2013-09-06

BFP650F Power gain G , G = ƒ (I ) Power gain G , G = ƒ (V ) ma ms C ma ms CE V = 3 V I = 80 mA CE C f = parameter in GHz f = parameter in GHz 30 30 0.90GHz 28 0.90GHz 26 25 24 1.80GHz 22 20 2.40GHz 20 1.80GHz 3.00GHz B] B] G [d 18 2.40GHz G [d 15 4.00GHz 16 3.00GHz 5.00GHz 6.00GHz 14 10 4.00GHz 12 5.00GHz 10 6.00GHz 5 8 6 0 0 20 40 60 80 100 120 140 160 180 200 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 I [mA] V [V] C CE 5 2013-09-06

Package TSFP-4 BFP650F 6 2013-09-06

BFP650F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2013-09-06

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