BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices

Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BFP640ESD BFP640ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor Revision History: 2012-09-17, Revision 1.1 Page Subjects (major changes since previous revision) This data sheet replaces the revision from 2010-06-29. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the data sheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLIDFLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYOYUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.1, 2012-09-17

BFP640ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 4 Revision 1.1, 2012-09-17

BFP640ESD List of Figures List of Figures Figure4-1 Total Power Dissipation P = f (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 tot s Figure5-1 BFP640ESD Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure5-2 Collector Current vs. Collector Emitter Voltage I = f (V ), I = Parameter in µA. . . . . . . . . . . . . 17 C CE B Figure5-3 DC Current Gain h = f (I ), V = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 FE C CE Figure5-4 Collector Current vs. Base Emitter Voltage I = f (V ), V = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18 C BE CE Figure5-5 Base Current vs. Base Emitter Forward Voltage I = f (V ), V = 2 V . . . . . . . . . . . . . . . . . . . . 18 B BE CE Figure5-6 Base Current vs. Base Emitter Reverse Voltage I = f (V ), V = 2 V . . . . . . . . . . . . . . . . . . . . 19 B EB CE Figure5-7 Transition Frequency f = f (I ), f = 1 GHz, V = Parameter in V. . . . . . . . . . . . . . . . . . . . . . . . . 20 T C CE Figure5-8 3rd Order Intercept Point OIP = f (I ), Z = Z = 50Ω, V , f = Parameters . . . . . . . . . . . . . . . . . 20 3 C S L CE Figure5-9 Collector Base Capacitance C = f (V ), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 CB CB Figure5-10 Gain G , G , IS I² = f (f), V = 3 V, I = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 ma ms 21 CE C Figure5-11 Maximum Power Gain G = f (I ), V = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 22 max C CE Figure5-12 Maximum Power Gain G = f (V ), I = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22 max CE C Figure5-13 Input Matching S = f (f), V = 3 V, I = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 11 CE C Figure5-14 Source Impedance for Minimum Noise Figure Z = f (f), V = 3 V, I = 6 / 30 mA. . . . . . . . . . . 23 opt CE C Figure5-15 Output Matching S = f (f), V = 3 V, I = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 22 CE C Figure5-16 Noise Figure NF = f (f), V = 3 V, I = 6 / 30 mA, Z = Z . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 min CE C S opt Figure5-17 Noise Figure NF = f (I ), V = 3 V, Z = Z , f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 25 min C CE S opt Figure5-18 Noise Figure NF = f (I ), V = 3 V, Z = 50Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25 50 C CE S Figure7-1 Package Outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure7-3 Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Data Sheet 5 Revision 1.1, 2012-09-17

BFP640ESD List of Tables List of Tables Table3-1 Maximum Ratings at T = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 A Table4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table5-1 DC Characteristics at T =25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 A Table5-2 General AC Characteristics at T =25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 A Table5-3 AC Characteristics, V = 3 V, f=150MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 CE Table5-4 AC Characteristics, V = 3 V, f=450MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 CE Table5-5 AC Characteristics, V = 3 V, f=900MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 CE Table5-6 AC Characteristics, V = 3 V, f=1.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 CE Table5-7 AC Characteristics, V = 3 V, f=1.9GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 CE Table5-8 AC Characteristics, V = 3 V, f=2.4GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 CE Table5-9 AC Characteristics, V = 3 V, f=3.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 CE Table5-10 AC Characteristics, V = 3 V, f=5.5GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 CE Table5-11 AC Characteristics, V = 3 V, f=10GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 CE Data Sheet 6 Revision 1.1, 2012-09-17

BFP640ESD Product Brief 1 Product Brief The BFP640ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to V = 4.1 V and currents up to I = 50 mA. The device is especially suited for mobile CEO C applications in which low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plastic package with visible leads. Data Sheet 7 Revision 1.1, 2012-09-17

BFP640ESD Features 2 Features • Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology • 2 kV ESD robustness (HBM) due to integrated protection circuits • High maximum RF input power of 21 dBm • 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA • 26.5 dB maximum gain G typical at 1.5 GHz, ms 23 dB G at 2.4 GHz, 30 mA ms • 27 dBm OIP typical at 2.4 GHz, 30 mA 3 • Easy to use Pb-free (RoHS compliant) and halogen-free standard package with visible leads • Qualification report according to AEC-Q101 available Applications As Low Noise Amplifier (LNA) in • Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB, Bluetooth • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB • Multimedia applications such as mobile / portable TV, CATV, FM radio • 3G/4G UMTS/LTE mobile phone applications • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention:ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Pin Configuration Marking BFP640ESD SOT343 1 = B 2 = E 3 = C 4 = E T4s Data Sheet 8 Revision 1.1, 2012-09-17

BFP640ESD Maximum Ratings 3 Maximum Ratings Table3-1 Maximum Ratings at T = 25 °C (unless otherwise specified) A Parameter Symbol Values Unit Note / TestCondition Min. Max. Collector emitter voltage V Open base CEO – 4.1 V T = 25 °C A – 3.6 V T = -55 °C A Collector base voltage1) V Open emitter CBO – 4.8 V T = 25 °C A – 4.3 V T = -55 °C A Collector emitter voltage2) V E-B short circuited CES – 4.1 V T = 25 °C A – 3.6 V T = -55 °C A Base current3) I -10 6 mA – B Collector current I – 50 mA – C RF input power4) P – 21 dBm – RFin ESD stress pulse5) V -2 2 kV HBM, all pins, acc. to ESD JESD22-A114 Total power dissipation6) P – 200 mW T ≤88°C tot S Junction temperature T – 150 °C – J Storage temperature T -55 150 °C – Stg 1) Low V due to integrated protection circuits. CBO 2) V is identical to V due to integrated protection circuits. CES CEO 3) Sustainable reverse bias current is high due to integrated protection circuits. 4) RF input power is high due to integrated protection circuits. 5) ESD robustness is high due to integrated protection circuits. 6) T is the soldering point temperature. T measured on the emitter lead at the soldering point of the pcb. S S Attention:Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 9 Revision 1.1, 2012-09-17

BFP640ESD Thermal Characteristics 4 Thermal Characteristics Table4-1 Thermal Resistance Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Junction-soldering point1) R – 310 – K/W – thJS 1)For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation). thJS 250 200 150 W] m ot [ Pt 100 50 0 0 25 50 75 100 125 150 T [°C] S Figure4-1 Total Power Dissipation P = f (T ) tot s Data Sheet 10 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table5-1 DC Characteristics at T =25°C A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Collector emitter breakdown voltage V 4.1 4.7 – V I =1mA, I =0 (BR)CEO C B Open base Collector emitter leakage current I – – 500 nA V =2V, V =0 CES CE BE E-B short circuited Collector base leakage current I – – 500 nA V =2V, I =0 CBO CB E Open emitter Emitter base leakage current I – – 10 μA V =0.5V, I =0 EBO EB C Open collector DC current gain h 110 180 270 V =3V, I =30mA FE CE C Pulse measured 5.2 General AC Characteristics Table5-2 General AC Characteristics at T =25°C A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Transition frequency f – 45 – GHz V =3V, I =30mA, T CE C f=1GHz Collector base capacitance C – 0.08 – pF V =3V, V =0 V CB CB BE f=1MHz Emitter grounded Collector emitter capacitance C – 0.4 – pF V =3V, V =0 V CE CE BE f=1MHz Base grounded Emitter base capacitance C – 0.7 – pF V =0.4V, V =0 V EB EB CB f=1MHz Collector grounded Data Sheet 11 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a test fixture with Bias T’s in a 50Ω system, T = 25 °C A VC Top View Bias-T OUT E C VB B E Bias-T (Pin 1) IN Figure5-1 BFP640ESD Testing Circuit Table5-3 AC Characteristics, V = 3 V, f=150MHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 34 – I =6mA ms C High linearity operation point G – 39.5 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 25 – I =6mA 21 C High linearity operation point S – 35 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.6 – I =6mA min C Associated gain G – 30 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 11 – I =30mA 1dB C 3rd order intercept point OIP – 25 – I =30mA 3 C Data Sheet 12 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics Table5-4 AC Characteristics, V = 3 V, f=450MHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 29 – I =6mA ms C High linearity operation point G – 34.5 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 24.5 – I =6mA 21 C High linearity operation point S – 32 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.6 – I =6mA min C Associated gain G – 28.5 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 11 – I =30mA 1dB C 3rd order intercept point OIP – 25 – I =30mA 3 C Table5-5 AC Characteristics, V = 3 V, f=900MHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 26 – I =6mA ms C High linearity operation point G – 30.5 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 23.5 – I =6mA 21 C High linearity operation point S – 28 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.6 – I =6mA min C Associated gain G – 26 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 11.5 – I =30mA 1dB C 3rd order intercept point OIP – 26 – I =30mA 3 C Data Sheet 13 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics Table5-6 AC Characteristics, V = 3 V, f=1.5GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 23.5 – I =6mA ms C High linearity operation point G – 26.5 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 21 – I =6mA 21 C High linearity operation point S – 24 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.65 – I =6mA min C Associated gain G – 23.5 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 12 – I =30mA 1dB C 3rd order intercept point OIP – 26.5 – I =30mA 3 C Table5-7 AC Characteristics, V = 3 V, f=1.9GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 22.5 – I =6mA ms C High linearity operation point G – 25 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 19.5 – I =6mA 21 C High linearity operation point S – 22 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.65 – I =6mA min C Associated gain G – 22 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 12 – I =30mA 1dB C 3rd order intercept point OIP – 27 – I =30mA 3 C Data Sheet 14 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics Table5-8 AC Characteristics, V = 3 V, f=2.4GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 21 – I =6mA ms C High linearity operation point G – 23 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 18 – I =6mA 21 C High linearity operation point S – 20 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.7 – I =6mA min C Associated gain G – 20 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 12.5 – I =30mA 1dB C 3rd order intercept point OIP – 27 – I =30mA 3 C Table5-9 AC Characteristics, V = 3 V, f=3.5GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 19 – I =6mA ma C High linearity operation point G – 19 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 15 – I =6mA 21 C High linearity operation point S – 17 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 0.8 – I =6mA min C Associated gain G – 16 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 12.5 – I =30mA 1dB C 3rd order intercept point OIP – 26.5 – I =30mA 3 C Data Sheet 15 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics Table5-10 AC Characteristics, V = 3 V, f=5.5GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 14 – I =6mA ma C High linearity operation point G – 14.5 – I =30mA ma C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 11 – I =6mA 21 C High linearity operation point S – 12.5 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 1.05 – I =6mA min C Associated gain G – 11.5 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 12.5 – I =30mA 1dB C 3rd order intercept point OIP – 26 – I =30mA 3 C Table5-11 AC Characteristics, V = 3 V, f=10GHz CE Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Maximum power gain dB Low noise operation point G – 10 – I =6mA ms C High linearity operation point G – 10.5 – I =30mA ms C Transducer gain dB Z = Z =50Ω S L Low noise operation point S – 4.5 – I =6mA 21 C High linearity operation point S – 6 – I =30mA 21 C Minimum noise figure dB Z =Z S opt Minimum noise figure NF – 2 – I =6mA min C Associated gain G – 7 – I =6mA ass C Linearity dBm Z = Z =50Ω S L 1 dB gain compression point OP – 11 – I =30mA 1dB C 3rd order intercept point OIP – 25.5 – I =30mA 3 C Notes 1. G = IS / S I for k < 1; G = IS / S I(k-(k2-1)1/2) for k > 1. ms 21 12 ma 21 12 2. In order to get the NF values stated in this chapter the test fixture losses have been subtracted from all min measured result. 3. OIP value depends on termination of all intermodulation frequency components. Termination used for this 3 measurement is 50Ω from 0.2 MHz to 12 GHz. Data Sheet 16 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 5.4 Characteristic DC Diagrams 6600 5500 IIBB==332255µµAA IIBB==227755µµAA 4400 IIBB==222255µµAA A]A] mm 3300 IIBB==117755µµAA [[ CC II IIBB==112255µµAA 2200 IIBB==7755µµAA 1100 IIBB==2255µµAA 00 00..00 00..55 11..00 11..55 22..00 22..55 33..00 33..55 44..00 44..55 VV [[VV]] CCEE Figure5-2 Collector Current vs. Collector Emitter Voltage I = f (V ), I = Parameter in µA C CE B 1000 E F h 100 0.1 1 10 100 I [mA] C Figure5-3 DC Current Gain h = f (I ), V = 3 V FE C CE Data Sheet 17 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 100 10 1 0.1 A] m [ C 0.01 I 0.001 0.0001 0.00001 0.4 0.5 0.6 0.7 0.8 0.9 V [V] BE Figure5-4 Collector Current vs. Base Emitter Voltage I = f (V ), V = 2 V C BE CE 1 0.1 0.01 A] m 0.001 [ B I 0.0001 0.00001 0.000001 0.4 0.5 0.6 0.7 0.8 0.9 V [V] BE Figure5-5 Base Current vs. Base Emitter Forward Voltage I = f (V ), V = 2 V B BE CE Data Sheet 18 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 1.E-04 1.E-05 1.E-06 A] 1.E-07 [ B I 1.E-08 1.E-09 1.E-10 0.2 0.3 0.4 0.5 0.6 V [V] EB Figure5-6 Base Current vs. Base Emitter Reverse Voltage I = f (V ), V = 2 V B EB CE Data Sheet 19 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 5.5 Characteristic AC Diagrams 50 45 4.00V 40 3.00V 35 2.50V 30 z] H G25 [T f 20 2.00V 15 10 5 1.00V 0 0 10 20 30 40 50 60 I [mA] C Figure5-7 Transition Frequency f = f (I ), f = 1 GHz, V = Parameter in V T C CE 30 25 20 m]15 B d [3 P OI10 2V, 1.5GHz 5 3V, 1.5GHz 2V, 2.4GHz 0 3V, 2.4GHz −5 0 10 20 30 40 50 I [mA] C Figure5-8 3rd Order Intercept Point OIP = f (I ), Z = Z = 50Ω, V , f = Parameters 3 C S L CE Data Sheet 20 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 0.2 0.18 0.16 0.14 0.12 F] p [b 0.1 c C 0.08 0.06 0.04 0.02 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V [V] CB Figure5-9 Collector Base Capacitance C = f (V ), f = 1 MHz CB CB 50 45 40 35 G ms 30 B] d25 G [ G ma 20 G ms 15 2 |S | 21 10 5 0 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure5-10 Gain G , G , IS I² = f (f), V = 3 V, I = 30 mA ma ms 21 CE C Data Sheet 21 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 42 0.15GHz 39 36 0.45GHz 33 0.90GHz 30 27 1.50GHz 24 1.90GHz B] 2.40GHz d21 G [ 18 3.50GHz 15 5.50GHz 12 10.00GHz 9 6 3 0 0 10 20 30 40 50 60 I [mA] C Figure5-11 Maximum Power Gain G = f (I ), V = 3 V, f = Parameter in GHz max C CE 42 0.15GHz 39 36 0.45GHz 33 0.90GHz 30 27 1.50GHz 1.90GHz 24 B] 2.40GHz d21 G [ 3.50GHz 18 15 5.50GHz 12 10.00GHz 9 6 3 0 0 1 2 3 4 5 V [V] CE Figure5-12 Maximum Power Gain G = f (V ), I = 30 mA, f = Parameter in GHz max CE C Data Sheet 22 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 1 1.5 0.5 2 10 0.4 9 10 8 9 3 0.3 7 8 7 4 0.2 6 6 5 5 5 0.1 4 0.03 to 10 GHz 10 4 3 0 0.1 0.2 0.30.40.5 1 1.5 2 3 4 5 2 −0.1 3 −10 1 −0.2 −5 2 −4 −0.3 −3 1 −0.4 −0.5 −2 −1.5 30 mA −1 6 mA Figure5-13 Input Matching S = f (f), V = 3 V, I = 6 / 30 mA 11 CE C 1 1.5 0.5 2 0.4 3 0.3 1.9GHz 0.9GHz 4 0.2 5 2.4GHz 0.45GHz 0.1 10 0 0.1 0.2 0.3 0.40.5 1 1.5 2 3 4 5 I = 6.0mA c −0.1 I = 30mA −10 c −0.2 5.5GHz −5 −4 −0.3 −3 −0.4 10GHz −0.5 −2 −1.5 −1 Figure5-14 Source Impedance for Minimum Noise Figure Z = f (f), V = 3 V, I = 6 / 30 mA opt CE C Data Sheet 23 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 1 1.5 0.5 2 0.4 3 0.3 4 10 10 0.2 5 9 9 0.1 0.03 to 10 GHz 10 8 8 7 0 0.1 0.2 0.30.40.5 61 1.5 2 3 4 5 7 5 6 4 −0.1 3 −10 5 2 4 1 −0.2 3 −5 2 1 −4 −0.3 −3 −0.4 −0.5 −2 −1.5 30 mA −1 6 mA Figure5-15 Output Matching S = f (f), V = 3 V, I = 6 / 30 mA 22 CE C 2 1.8 1.6 1.4 B] 1.2 d n [ 1 mi F N 0.8 0.6 I = 30mA 0.4 IC = 6.0mA C 0.2 0 0 2 4 6 8 10 f [GHz] Figure5-16 Noise Figure NF = f (f), V = 3 V, I = 6 / 30 mA, Z = Z min CE C S opt Data Sheet 24 Revision 1.1, 2012-09-17

BFP640ESD Electrical Characteristics 4 3.5 3 2.5 B] d n [ 2 mi F N 1.5 1 f = 10GHz f = 5.5GHz f = 2.4GHz 0.5 f = 1.9GHz f = 0.9GHz f = 0.45GHz 0 0 10 20 30 40 50 I [mA] c Figure5-17 Noise Figure NF = f (I ), V = 3 V, Z = Z , f = Parameter in GHz min C CE S opt 5 4.5 4 3.5 3 B] d 0 [ 2.5 5 F N 2 1.5 f = 10GHz 1 f = 5.5GHz f = 2.4GHz f = 1.9GHz 0.5 f = 0.9GHz f = 0.45GHz 0 0 10 20 30 40 50 I [mA] c Figure5-18 Noise Figure NF = f (I ), V = 3 V, Z = 50Ω, f = Parameter in GHz 50 C CE S Note:The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T = 25°C. A Data Sheet 25 Revision 1.1, 2012-09-17

BFP640ESD Simulation Data 6 Simulation Data For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 26 Revision 1.1, 2012-09-17

BFP640ESD Package Information SOT343 7 Package Information SOT343 0.9±0.1 2±0.2 0.1 MAX. 1.3 0.1 A 4 3 0.15 2.1±0.1 1 MIN. 1.25±0.1 1 2 0. 0.3+-00..015 0.15+-00..015 4x 0.6-+00..015 0.1M 0.2M A SOT343-PO V08 Figure7-1 Package Outline 0.6 8 0. 6 1. 1.15 0.9 SOT343-FP V08 Figure7-2 Package Footprint Type code XYs Date code (YM) 6 Manufacturer 2005, June 5 Pin 1 Figure7-3 Marking Description (Marking BFP640ESD: T4s) 4 0.2 8 3 2. Pin 1 2.15 1.1 SOT323-TP V02 Figure7-4 Tape Dimensions Data Sheet 27 Revision 1.1, 2012-09-17

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