BF991 N-channel dual-gate MOS-FET Rev. 03 — 20 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name -NXPSemiconductors,whichwillbeusedinfuturedatasheetstogetherwithnewcontact details. IndatasheetswherethepreviousPhilipsreferencesremain,pleaseusethenewlinksas shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors

NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 FEATURES DESCRIPTION • Protected against excessive input voltage surges by Depletion type field-effect transistor in a plastic SOT143 integrated back-to-back diodes between gates microminiature package with interconnected source and source. and substrate. APPLICATIONS • VHF applications such as: handbook, halfpage d 4 3 – VHF television tuners and FM tuners g – Professional communication equipment. 2 g 1 PINNING PIN SYMBOL DESCRIPTION 1 2 1 s, b source s,b 2 d drain Top view MAM039 3 g gate2 2 Marking code: %MA. 4 g gate1 1 Fig.1 Simplified outline (SOT143) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V drain-source voltage - 20 V DS I drain current - 20 mA D P total power dissipation up to T =60(cid:176) C - 200 mW tot amb T junction temperature - 150 (cid:176) C j Y transfer admittance f=1kHz; I =10mA; V =10V; V =4V 14 - mS fs D DS G2-S C input capacitance at gate1 f=1MHz; I =10mA; V =10V; V =4V 2.1 - pF ig1-s D DS G2-S C feedback capacitance f=1MHz; I =10mA; V =10V; V =4V 20 - fF rs D DS G2-S F noise figure f=200MHz; G =2mS; B =B ; 1 2 dB S S Sopt I =10mA; V =10V; V =4V D DS G2-S Rev. 03 - 20 November 2007 2 of 7

NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 LIMITING VALUES In according with the Absolute Maximum Rating System (IEC134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage - 20 V DS I drain current (DC) - 20 mA D I average drain current - 20 mA D(AV) I gate1-source current - – 10 mA G1-S I gate2-source current - – 10 mA G2-S P total power dissipation up to T =60(cid:176) C; note1 - 200 mW tot amb T storage temperature - 65 +150 (cid:176) C stg T junction temperature - 150 (cid:176) C j THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air; note1 460 K/W thj-a Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8· 10· 0.7mm. MGE792 200 handbook, halfpage Ptot(cid:13) (mW) 100 0 0 100 200 Tamb (°C) Fig.2 Power derating curve. Rev. 03 - 20 November 2007 3 of 7

NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 STATIC CHARACTERISTICS T =25(cid:176) C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I gate1 cut-off current V =5V; V =V =0 - 50 nA G1-SS G1-S G2-S DS I gate2 cut-off current V =5V; V =V =0 - 50 nA G2-SS G2-S G1-S DS I drain current V =10V; V =0; V =4V 4 25 mA DSS DS G1-S G2-S V gate1-source breakdown voltage I =10mA; V =V =0 6 20 V (BR)G1-SS G1-SS G2-S DS V gate2-source breakdown voltage I =10mA; V =V =0 6 20 V (BR)G2-SS G2-SS G1-S DS V gate1-source cut-off voltage I =20m A; V =10V; V =4V - - 2.5 V (P)G1-S D DS G2-S V gate2-source cut-off voltage I =20m A; V =10V; V =0 - - 2.5 V (P)G2-S D DS G1-S DYNAMIC CHARACTERISTICS Measuring conditions (common source): I =10mA; V =10V; V =4V; T =25(cid:176) C. D DS G2-S amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Y transfer admittance f=1kHz 10 14 - mS fs C input capacitance at gate1 f=1MHz - 2.1 - pF ig1-s C input capacitance at gate2 f=1MHz - 1 - pF ig2-s C feedback capacitance f=1MHz - 20 - fF rs C output capacitance f=1MHz - 1.1 - pF os F noise figure f=100MHz; G =1mS; B =B - 0.7 1.7 dB S S Sopt f=200MHz; G =2mS; B =B - 1 2 dB S S Sopt G transducer gain; note1 f=100MHz; G =1mS; B =B ; - 29 - dB tr S S Sopt G =0.5mS; B =B L L Lopt f=200MHz; G =2mS; B =B ; - 26 - dB S S Sopt G =0.5mS; B =B L L Lopt Note 1. Crystal mounted in a SOT103 package. Rev. 03 - 20 November 2007 4 of 7

NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF991 PACKAGE OUTLINE 3.0(cid:13) handbook, full pagewidth 2.8 B 0.150(cid:13) 0.75(cid:13) 0.090 1.9 A 0.2M A B 0.60 4 3 o 0.1(cid:13) 10(cid:13) max 1.4(cid:13) 2.5(cid:13) max 1.2 max o 10(cid:13) max 1 2 1.1(cid:13) max 30(cid:13)o 0(cid:13) 0(cid:13) 0.1M A B MBC845 0.88 0.48 max 0.1 0.1 1.7 TOP VIEW Dimensions in mm. See alsoSoldering recommendations. Fig.3 SOT143. Rev. 03 - 20 November 2007 5 of 7

BF991 NXP Semiconductors N-channel dual-gate MOS-FET Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. Definitions malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of Draft —The document is a draft version only. The content is still under NXP Semiconductors products in such equipment or applications and internal review and subject to formal approval, which may result in therefore such inclusion and/or use is at the customer’s own risk. modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of Applications —Applications that are described herein for any of these informationincludedhereinandshallhavenoliabilityfortheconsequencesof products are for illustrative purposes only. NXP Semiconductors makes no use of such information. representation or warranty that such applications will be suitable for the specified use without further testing or modification. Short data sheet —A short data sheet is an extract from a full data sheet withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended Limiting values —Stress above one or more limiting values (as defined in forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent full information. For detailed and full information see the relevant full data damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof sheet, which is available on request via the local NXP Semiconductors sales the device at these or any other conditions above those given in the office. In case of any inconsistency or conflict with the short data sheet, the Characteristics sections of this document is not implied. Exposure to limiting full data sheet shall prevail. values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold Disclaimers subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless General —Information in this document is believed to be accurate and explicitly otherwise agreed to in writing by NXP Semiconductors. In case of reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor any inconsistency or conflict between information in this document and such warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch terms and conditions, the latter will prevail. information and shall have no liability for the consequences of use of such No offer to sell or license —Nothing in this document may be interpreted information. or construed as an offer to sell products that is open for acceptance or the Right to make changes —NXPSemiconductorsreservestherighttomake grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents changes to information published in this document, including without or other industrial or intellectual property rights. limitation specifications and product descriptions, at any time and without notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Trademarks Suitability for use —NXP Semiconductors products are not designed, Notice:Allreferencedbrands,productnames,servicenamesandtrademarks authorized or warranted to be suitable for use in medical, military, aircraft, are the property of their respective owners. space or life support equipment, nor in applications where failure or Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Rev. 03 - 20 November 2007 6 of 7

BF991 NXP Semiconductors N-channel dual-gate MOS-FET Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BF991_N_3 20071120 Product data sheet - BF991_2 Modifications: • Fig. 1 on page 2; Figure note changed BF991_2 19910401 Product specification - BF991_SF_1 BF991_SF_1 - - - - Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 November 2007 Document identifier: BF991_N_3