BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Specially designed for low loss RF switching up to 1 GHz 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit L on-state insertion loss R =R =50W ;f£ 1GHz; [1] - - 2 dB ins(on) S L V =V =0V; I =0mA SK DK F ISL off-state isolation R =R =50W ; f£ 1GHz; 30 - - dB off S L V =V =5V; I =1mA SK DK F R drain-source on-state V =0V; I =1mA - 12 20 W DSon KS D resistance V gate-source pinch-off V =1V; I =20m A - - 3 - 4 V GS(p) DS D voltage [1] I =diode forward current. F

BF1108; BF1108R NXP Semiconductors Silicon RF switches 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BF1108 (SOT143B) 1 FET gate; diode anode 4 3 4 3 2 diode cathode 3 source [1] 4 drain [1] 1 2 1 2 001aai042 BF1108R (SOT143R) 1 FET gate; diode anode 3 4 3 4 2 diode cathode 3 source [1] 4 drain [1] 2 1 2 1 001aai043 [1] Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1108 - plastic surface-mounted package; 4 leads SOT143B BF1108R - plastic surface-mounted package; reverse pinning; SOT143R 4leads 4. Marking Table 4. Marking Type number Marking code BF1108 NGp BF1108R NHp BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 2 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit FET V drain-source voltage - 3 V DS V source-drain voltage - 3 V SD V drain-gate voltage - 7 V DG V source-gate voltage - 7 V SG I drain current - 10 mA D Diode V reverse voltage - 35 V R I forward current - 100 mA F FET and diode T storage temperature - 65 +150 (cid:176) C stg T junction temperature - 150 (cid:176) C j 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction [1] 250 K/W th(j-sp) to solder point [1] Soldering point of FET gate and diode anode lead. 7. Static characteristics Table 7. Static characteristics T = 25(cid:176) C unless otherwise specified. j Symbol Parameter Conditions Min Typ Max Unit FET V gate-source breakdown V =0V; I =0.1mA 7 - - V (BR)GSS DS GS voltage V gate-source pinch-off voltage V =1V; I =20m A - - 3 - 4 V GS(p) DS D I drain cut-off current V =- 5V; V =2V - - 10 m A DSX GS DS I gate leakage current V =- 5V; V =0V - - 100 nA GSS GS DS R drain-source on-state V =0V; I =1mA - 12 20 W DSon GS D resistance Diode V forward voltage I =10 mA - - 1 V F F I reverse current V =25V - - 50 nA R R V =20V; T =75(cid:176) C - - 1 m A R amb BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 3 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 8. Dynamic characteristics Table 8. Dynamic characteristics Common cathode; T = 25(cid:176) C. amb Symbol Parameter Conditions Min Typ Max Unit FET and diode L on-state insertion loss V =V =0V; I =0mA [1] ins(on) SK DK F R =R =50W ; f£ 1GHz - - 2 dB S L R =R =50W ; f=1GHz - 1.3 - dB S L R =R =75W ; f£ 1GHz - - 3 dB S L ISL off-state isolation V =V =5V; I =1mA off SK DK F R =R =50W ; f£ 1GHz 30 - - dB S L R =R =50W ; f=1GHz - 38 - dB S L R =R =75W ; f£ 1GHz 30 - - dB S L R drain-source on-state V =0V; I =1mA - 12 20 W DSon KS D resistance C input capacitance f=1MHz [2] i V =V =5V; I =1mA - 1 - pF SK DK F V =V =0V; I =0mA - 0.65 0.9 pF SK DK F C output capacitance f=1MHz [2] o V =V =5V; I =1mA - 1 - pF SK DK F V =V =0V; I =0mA - 0.65 0.9 pF SK DK F Diode C diode capacitance f=1MHz; V =0V - 1.1 - pF d R r diode forward resistance I =2mA; f=100 MHz [3] - - 0.7 W D F [1] I =diode forward current. F [2] C is the series connection of C and C ; C is the series connection of C and C . i GS GK o GD GK [3] Guaranteed on AQL basis; inspection level S4, AQL 1.0. BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 4 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches mgs357 mgs358 0 0 Lins(on) ISLoff - 1 - 20 - 2 - 40 - 3 - 4 - 60 0 400 800 1200 0 400 800 1200 f (MHz) f (MHz) V = V = 0 V; R = R = 50W ; I = 0 mA (diode V = V = 5 V; R = R = 50W ; I = 1 mA (diode SK DK S L F SK DK S L F forward current). forward current). Measured in test circuit seeFigure3. Measured in test circuit seeFigure3. Fig 1. On-state insertion loss as a function of Fig 2. Off-state isolation as a function of frequency; frequency; typical values typical values V 1 nF 100 kW BF1108/BF1108R 47 kW 50 W 50 W input output 1 nF 1 nF 4.7 kW 100 kW V 1 nF mbl028 On-state: V=0V. Off-state: V=5V. Fig 3. Test circuit BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 5 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 9. Package outline Plastic surface-mounted package; 4 leads SOT143B D B E A X y v M A HE e bp w M B 4 3 Q A A1 c 1 2 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp b1 c D E e e1 HE Lp Q v w y 1.1 0.48 0.88 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 1.7 0.2 0.1 0.1 0.9 0.38 0.78 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-16 SOT143B 06-03-16 Fig 4. Package outline SOT143B BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 6 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches Plastic surface-mounted package; reverse pinning; 4 leads SOT143R D B E A X y v M A HE e bp w M B 3 4 Q A A1 c 2 1 Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y max 1.1 0.48 0.88 0.15 3.0 1.4 2.5 0.55 0.45 mm 0.1 1.9 1.7 0.2 0.1 0.1 0.9 0.38 0.78 0.09 2.8 1.2 2.1 0.25 0.25 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-16 SOT143R SC-61AA 06-03-16 Fig 5. Package outline SOT143R BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 7 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 10. Abbreviations Table 9. Abbreviations Acronym Description AQL Acceptable Quality Level MOSFET Metal-Oxide Semiconductor Field-Effect Transistor RF Radio Frequency S4 Special inspection level 4 VCR VideoCassette Recorder 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BF1108_BF1108R_4 20080529 Product data sheet - BF1108_1108R_3 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Symbol notation has been adapted to comply with the current guidelines of NXP Semiconductors. BF1108_1108R_3 19991118 Product data sheet - BF1108_1108R_2 (939775006477) BF1108_1108R_2 19990819 Product data sheet - BF1108_1108R_1 (939775006073) BF1108_1108R_1 19990517 Preliminary specification - - (939775005899) BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 8 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 12.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, 12.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of an NXP Semiconductors product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 29 May 2008 9 of 10

BF1108; BF1108R NXP Semiconductors Silicon RF switches 14. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3 8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 29 May 2008 Document identifier: BF1108_BF1108R_4