BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX53, BDX53A, BDX53B and BDX53C TO-220 PACKAGE ● 60 W at 25°C Case Temperature (TOP VIEW) ● 8 A Continuous Collector Current B 1 ● Minimum h of 750 at 3 V, 3 A FE C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDX54 -45 BDX54A -60 Collector-base voltage (I = 0) V V E BDX54B CBO -80 BDX54C -100 BDX54 -45 BDX54A -60 Collector-emitter voltage (I = 0) V V B BDX54B CEO -80 BDX54C -100 Emitter-base voltage V -5 V EBO Continuous collector current I -8 A C Continuous base current I -0.2 A B Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P 60 W tot Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P 2 W tot Operating junction temperature range T -65 to +150 °C j Operating temperature range T -65 to +150 °C stg Operating free-air temperature range T -65 to +150 °C A NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) MAY 1989 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.

BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BDX54 -45 Collector-emitter BDX54A -60 V I = -100 mA I = 0 (see Note 3) V (BR)CEO breakdown voltage C B BDX54B -80 BDX54C -100 V = -30 V I =0 BDX54 -0.5 CE B Collector-emitter V = -30 V I =0 BDX54A -0.5 I CE B mA CEO cut-off current V = -40 V I =0 BDX54B -0.5 CE B V = -50 V I =0 BDX54C -0.5 CE B V = -45 V I =0 BDX54 -0.2 CB E Collector cut-off V = -60 V I =0 BDX54A -0.2 I CB E mA CBO current V = -80 V I =0 BDX54B -0.2 CB E V = -100 V I =0 BDX54C -0.2 CB E Emitter cut-off I V = -5 V I =0 -2 mA EBO current EB C Forward current h V = -3 V I =-3 A (see Notes 3 and 4) 750 FE transfer ratio CE C Base-emitter V I = -12 mA I =-3 A (see Notes 3 and 4) -2.5 V BE(sat) saturation voltage B C Collector-emitter V I = -12 mA I = -3 A (see Notes 3 and 4) -2 V CE(sat) saturation voltage B C Parallel diode V I = -3 A I = 0 -2.5 V EC forward voltage E B NOTES: 3. These parameters must be measured using pulse techniques, t = 300 µs, duty cycle ≤ 2%. p 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 2.08 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT t Turn-on time I = -3 A I = -12 mA I = 12 mA 1 µs on C B(on) B(off) t Turn-off time V = 4.2 V R = 10 Ω t = 20 µs, dc ≤ 2% 5 µs off BE(off) L p † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) MAY 1989 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.

BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT COLLECTOR CURRENT TCS125AG TCS125AH 40000 -3·0 V TC = -40°C e - tp = 300 µs, duty cycle < 2% T = 25°C g I = I / 100 C a B C n TC = 100°C Volt -2·5 ai10000 n G o urrent aturati -2·0 C S C er al D mitt -1·5 c E ypi 1000 or- h - TFE ollect -1·0 C VCE = -3 V - CE(sat) -0·5 TTCC == -2450°°CC tp = 300 µs, duty cycle < 2% V TC = 100°C 100 0 -0·5 -1·0 -10 -0·5 -1·0 -10 I - Collector Current - A I - Collector Current - A C C Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS125AI -3·0 ge - V TTCC == -2450°°CC a T = 100°C olt -2·0 C V n o ati ur -2·5 at S r e mitt -1·0 E e- s a B - E(sat) -1·5 VB I = I / 100 B C t = 300 µs, duty cycle < 2% p -0·5 -0·5 -1·0 -10 I - Collector Current - A C Figure 3. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) MAY 1989 - REVISED SEPTEMBER 2002 3 Specifications are subject to change without notice.

BDX54, BDX54A, BDX54B, BDX54C PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS125AD -100 DC Operation t = 300 µs, p d = 0.1 = 10% A nt - -10 e r r u C r o ct e oll C - C-1·0 I BDX54 BDX54A BDX54B BDX54C -0·1 -1·0 -10 -100 -1000 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AB 80 W 70 n - o ati 60 p si s Di 50 er w o 40 P m u m 30 xi a M - ot 20 Pt 10 0 0 25 50 75 100 125 150 T - Case Temperature - °C C Figure 5. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) MAY 1989 - REVISED SEPTEMBER 2002 4 Specifications are subject to change without notice.

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