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Datasheet下载- 型号： BDX34C
- 制造商： Fairchild Semiconductor
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产品参数
| 参数 | 数值 |
| 产品目录 | 分立半导体产品半导体 |
| 描述 | TRANSISTOR PNP 100V 10A TO-220达林顿晶体管 PNP Epitaxial Sil |
| 产品分类 | 晶体管(BJT) - 单路分离式半导体 |
| 品牌 | Fairchild Semiconductor |
| 产品手册 | 点击此处下载产品Datasheet |
| 产品图片 |   |
| rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 产品系列 | 晶体管,达林顿晶体管,Fairchild Semiconductor BDX34C- |
| 数据手册 | 点击此处下载产品Datasheet点击此处下载产品Datasheet |
| 产品型号 | BDX34C |
| PCN设计/规格 | 点击此处下载产品Datasheet |
| 不同 Ib、Ic时的 Vce饱和值（最大值） | 2.5V @ 6mA，3A |
| 不同 Ic、Vce 时的DC电流增益(hFE)（最小值） | 750 @ 3A，3V |
| 产品种类 | 达林顿晶体管 |
| 供应商器件封装 | TO-220 |
| 功率-最大值 | 70W |
| 功率耗散 | 70 W |
| 包装 | 散装 |
| 单位重量 | 1.800 g |
| 商标 | Fairchild Semiconductor |
| 安装类型 | 通孔 |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/外壳 | TO-220-3 |
| 封装/箱体 | TO-220-3 |
| 工厂包装数量 | 200 |
| 晶体管极性 | PNP |
| 晶体管类型 | PNP |
| 最大工作温度 | + 150 C |
| 最大直流电集电极电流 | 10 A |
| 最大集电极截止电流 | 200 uA |
| 标准包装 | 200 |
| 电压-集射极击穿（最大值） | 100V |
| 电流-集电极(Ic)（最大值） | 10A |
| 电流-集电极截止（最大值） | 500µA |
| 直流集电极/BaseGainhfeMin | 750 |
| 系列 | BDX34C |
| 配置 | Single |
| 集电极—发射极最大电压VCEO | 100 V |
| 集电极—基极电压VCBO | 100 V |
| 集电极连续电流 | - 10 A |
| 频率-跃迁 | - |
Datasheet
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BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D TO-220 PACKAGE (TOP VIEW) ● 70 W at 25°C Case Temperature B 1 ● 10 A Continuous Collector Current C 2 ● Minimum h of 750 at 3 V, 3 A FE E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDX34 -45 BDX34A -60 Collector-base voltage (I = 0) BDX34B V -80 V E CBO BDX34C -100 BDX34D -120 BDX34 -45 BDX34A -60 Collector-emitter voltage (I = 0) BDX34B V -80 V B CEO BDX34C -100 BDX34D -120 Emitter-base voltage V -5 V EBO Continuous collector current I -10 A C Continuous base current I -0.3 A B Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P 70 W tot Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P 2 W tot Operating free air temperature range T -65 to +150 °C J Storage temperature range T -65 to +150 °C stg Operating free-air temperature range T -65 to +150 °C A NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) AUGUST 1993 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BDX34 -45 BDX34A -60 Collector-emitter V I = -100 mA I = 0 (see Note 3) BDX34B -80 V (BR)CEO breakdown voltage C B BDX34C -100 BDX34D -120 V = -30 V I =0 BDX34 -0.5 CE B V = -30 V I =0 BDX34A -0.5 CE B V = -40 V I =0 BDX34B -0.5 CE B V = -50 V I =0 BDX34C -0.5 CE B Collector-emitter V = -60 V I =0 BDX34D -0.5 I CE B mA CEO cut-off current V = -30 V I =0 T = 100°C BDX34 -10 CE B C V = -30 V I =0 T = 100°C BDX34A -10 CE B C V = -40 V I =0 T = 100°C BDX34B -10 CE B C V = -50 V I =0 T = 100°C BDX34C -10 CE B C V = -60 V I =0 T = 100°C BDX34D -10 CE B C V = -45 V I =0 BDX34 -1 CB E V = -60 V I =0 BDX34A -1 CB E V = -80 V I =0 BDX34B -1 CB E V = -100 V I =0 BDX34C -1 CB E Collector cut-off V = -120 V I =0 BDX34D -1 I CB E mA CBO current V = -45 V I =0 T = 100°C BDX34 -5 CB E C V = -60 V I =0 T = 100°C BDX34A -5 CB E C V = -80 V I =0 T = 100°C BDX34B -5 CB E C V = -100 V I =0 T = 100°C BDX34C -5 CB E C V = -120 V I =0 T = 100°C BDX34D -5 CB E C Emitter cut-off I V = -5 V I =0 -10 mA EBO current EB C V = -3 V I =-4 A BDX34 750 CE C V = -3 V I =-4 A BDX34A 750 Forward current CE C h V = -3 V I =-3 A (see Notes 3 and 4) BDX34B 750 FE transfer ratio CE C V = -3 V I =-3 A BDX34C 750 CE C V = -3 V I =-3 A BDX34D 750 CE C V = -3 V I =-4 A BDX34 -2.5 CE C V = -3 V I =-4 A BDX34A -2.5 Base-emitter CE C V V = -3 V I =-3 A (see Notes 3 and 4) BDX34B -2.5 V BE(on) voltage CE C V = -3 V I =-3 A BDX34C -2.5 CE C V = -3 V I =-3 A BDX34D -2.5 CE C I = -8 mA I =-4 A BDX34 -2.5 B C I = -8 mA I =-4 A BDX34A -2.5 Collector-emitter B C V I = -6 mA I =-3 A (see Notes 3 and 4) BDX34B -2.5 V CE(sat) saturation voltage B C I = -6 mA I =-3 A BDX34C -2.5 B C I = -6 mA I =-3 A BDX34D -2.5 B C Parallel diode V I = -8 A I = 0 -4 V EC forward voltage E B NOTES: 3. These parameters must be measured using pulse techniques, t = 300 µs, duty cycle ≤ 2%. p 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) AUGUST 1993 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.78 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS † MIN TYP MAX UNIT t Turn-on time I = -3 A I = -12 mA I = 12 mA 1 µs on C B(on) B(off) t Turn-off time V = 3.5 V R = 10 Ω t = 20 µs, dc ≤ 2% 5 µs off BE(off) L p † Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) AUGUST 1993 - REVISED SEPTEMBER 2002 3 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT COLLECTOR CURRENT TCS135AF TCS135AH 50000 -2·0 V TC = -40°C e - tp = 300 µs, duty cycle < 2% T = 25°C g I = I / 100 C a B C n TC = 100°C Volt Gai10000 on ent rati -1·5 r u ur at C S C er al D mitt c E ypi 1000 or- h - TFE ollect -1·0 C VCE = -3 V - CE(sat) TTCC == -2450°°CC tp = 300 µs, duty cycle < 2% V TC = 100°C 100 -0·5 -0·5 -1·0 -10 -0·5 -1·0 -10 I - Collector Current - A I - Collector Current - A C C Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AJ -3·0 ge - V TTCC == -2450°°CC a T = 100°C olt -2·5 C V n o ati ur -2·0 at S r e mitt -1·5 E e- s a B - E(sat) -1·0 B I = I / 100 V B C t = 300 µs, duty cycle < 2% p -0·5 -0·5 -1·0 -10 I - Collector Current - A C Figure 3. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) AUGUST 1993 - REVISED SEPTEMBER 2002 4 Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AB 80 W 70 n - o ati 60 p si s Di 50 er w o 40 P m u m 30 xi a M - ot 20 Pt 10 0 0 25 50 75 100 125 150 T - Case Temperature - °C C Figure 4. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) AUGUST 1993 - REVISED SEPTEMBER 2002 5 Specifications are subject to change without notice.
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