BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C TO-220 PACKAGE ● 80 W at 25°C Case Temperature (TOP VIEW) ● 12 A Continuous Collector Current B 1 ● Minimum h of 750 at 3 V, 5 A FE C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW93 45 BDW93A 60 Collector-base voltage (I = 0) V V E BDW93B CBO 80 BDW93C 100 BDW93 45 BDW93A 60 Collector-emitter voltage (I = 0) V V B BDW93B CEO 80 BDW93C 100 Emitter-base voltage V 5 V EBO Continuous collector current I 12 A C Continuous base current I 0.3 A B Continuous device dissipation at (or below) 25°C case temperature (see Note 1) P 80 W tot Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) P 2 W tot Operating junction temperature range T -65 to +150 °C j Storage temperature range T -65 to +150 °C stg Operating free-air temperature range T -65 to +150 °C A NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) SEPTEMBER 1993 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.

BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BDW93 45 Collector-emitter BDW93A 60 V I = 100 mA I = 0 (see Note 3) V (BR)CEO breakdown voltage C B BDW93B 80 BDW93C 100 V = 40 V I =0 BDW93 1 CB B Collector-emitter V = 60 V I =0 BDW93A 1 I CB B mA CEO cut-off current V = 80 V I =0 BDW93B 1 CB B V = 80 V I =0 BDW93C 1 CB B V = 45 V I =0 BDW93 0.1 CB E V = 60 V I =0 BDW93A 0.1 CB E V = 80 V I =0 BDW93B 0.1 CB E Collector cut-off V = 100 V I =0 BDW93C 0.1 I CB E mA CBO current V = 45 V I =0 T = 150°C BDW93 5 CB E C V = 60 V I =0 T = 150°C BDW93A 5 CB E C V = 80 V I =0 T = 150°C BDW93B 5 CB E C V = 100 V I =0 T = 150°C BDW93C 5 CB E C Emitter cut-off I V = 5 V I =0 2 mA EBO current EB C V = 3 V I = 3 A 1000 Forward current CE C h V = 3 V I = 10 A (see Notes 3 and 4) 100 FE transfer ratio CE C V = 3 V I = 5 A 750 20000 CE C Collector-emitter I = 20 mA I = 5 A 2 V B C (see Notes 3 and 4) V CE(sat) saturation voltage I = 100 mA I = 10 A 3 B C Base-emitter I = 20 mA I = 5 A 2.5 V B C (see Notes 3 and 4) V BE(sat) saturation voltage I = 100 mA I = 10 A 4 B C Parallel diode I = 5 A I = 0 2 V E B V EC forward voltage I = 10 A I = 0 4 E B NOTES: 3. These parameters must be measured using pulse techniques, t = 300 µs, duty cycle ≤ 2%. p 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJC Junction to case thermal resistance 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) SEPTEMBER 1993 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.

BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT COLLECTOR CURRENT TCS130AE TCS130AG 50000 3·0 V TC = -40°C e - tp = 300 µs, duty cycle < 2% T = 25°C g I = I / 100 C a B C n TC = 100°C Volt 2·5 Gai10000 on urrent aturati 2·0 C S C er al D mitt 1·5 c E ypi 1000 or- h - TFE ollect 1·0 C VCE = 3 V - CE(sat) 0·5 TTCC == -2450°°CC t = 300 µs, duty cycle < 2% V T = 100°C p C 100 0 0·5 1·0 10 20 0·5 1·0 10 20 I - Collector Current - A I - Collector Current - A C C Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AI 3·0 V TC = -40°C e - TC = 25°C g a T = 100°C olt 2·5 C V n o ati ur 2·0 at S er mitt 1·5 E e- s a B - E(sat) 1·0 VB IB = IC / 100 t = 300 µs, duty cycle < 2% p 0·5 0·5 1·0 10 20 I - Collector Current - A C Figure 3. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) SEPTEMBER 1993 - REVISED SEPTEMBER 2002 3 Specifications are subject to change without notice.

BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA 100 W n - 80 o ati p si s Di 60 r e w o P m u 40 m xi a M - ot 20 Pt 0 0 25 50 75 100 125 150 T - Case Temperature - °C C Figure 4. (cid:0) (cid:1) (cid:2) (cid:3) (cid:4) (cid:5) (cid:6) (cid:8) (cid:9) (cid:10) (cid:2) (cid:1) (cid:11) (cid:12) (cid:6) (cid:8) (cid:2) (cid:9) SEPTEMBER 1993 - REVISED SEPTEMBER 2002 4 Specifications are subject to change without notice.

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