BDW42G (NPN), BDW46G,(cid:2)BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed www.onsemi.com switching applications. 15 AMP DARLINGTON Features • COMPLEMENTARY SILICON High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc. FE C • Collector Emitter Sustaining Voltage @ 30 mAdc: POWER TRANSISTORS VCEO(sus) = 80 Vdc (min) − BDW46 80−100 VOLT, 85 WATT 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage V = 2.0 Vdc (max) @ I = 5.0 Adc CE(sat) C 3.0 Vdc (max) @ I = 10.0 Adc C 4 • Monolithic Construction with Built−In Base Emitter Shunt resistors • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS 1 2 3 Rating Symbol Value Unit TO−220 Collector-Emitter Voltage VCEO Vdc CASE 221A BDW46 80 STYLE 1 BDW42, BDW47 100 Collector-Base Voltage VCB Vdc MARKING DIAGRAM BDW46 80 BDW42, BDW47 100 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 15 Adc BDWxx Base Current IB 0.5 Adc AYWWG Total Device Dissipation PD @ TC = 25°C 85 W Derate above 25°C 0.68 W/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range BDWxx = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = 42, 46, or 47 device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Thermal Resistance, R(cid:2)JC 1.47 °C/W Junction−to−Case Device Package Shipping BDW42G TO−220 50 Units/Rail (Pb−Free) BDW46G TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques BDW47G TO−220 50 Units/Rail Reference Manual, SOLDERRM/D. (Pb−Free) © Semiconductor Components Industries, LLC, 2016 Publication Order Number: August, 2016 − Rev. 17 BDW42/D

BDW42G (NPN), BDW46G, BDW47G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) BDW46 80 − BDW42/BDW47 100 − Collector Cutoff Current ICEO mAdc (VCE = 40 Vdc, IB = 0) BDW46 − 2.0 (VCE = 50 Vdc, IB = 0) BDW42/BDW47 − 2.0 Collector Cutoff Current ICBO mAdc (VCB = 80 Vdc, IE = 0) BDW46 − 1.0 (VCB = 100 Vdc, IE = 0) BDW42/BDW47 − 1.0 Emitter Cutoff Current IEBO − 2.0 mAdc (VBE = 5.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain hFE (IC = 5.0 Adc, VCE = 4.0 Vdc) 1000 − (IC = 10 Adc, VCE = 4.0 Vdc) 250 − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 5.0 Adc, IB = 10 mAdc) − 2.0 (IC = 10 Adc, IB = 50 mAdc) − 3.0 Base−Emitter On Voltage VBE(on) − 3.0 Vdc (IC = 10 Adc, VCE = 4.0 Vdc) SECOND BREAKDOWN (Note 2) Second Breakdown Collector IS/b Adc Current with Base Forward Biased BDW42 VCE = 28.4 Vdc 3.0 − VCE = 40 Vdc 1.2 − BDW46/BDW47 VCE = 22.5 Vdc 3.8 − VCE = 36 Vdc 1.2 − DYNAMIC CHARACTERISTICS Magnitude of common emitter small signal short circuit current transfer ratio fT 4.0 − MHz (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) BDW42 − 200 BDW46/BDW47 − 300 Small−Signal Current Gain hfe 300 − (IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle = 2.0%. 2. Pulse Test non repetitive: Pulse Width = 250 ms. www.onsemi.com 2

BDW42G (NPN), BDW46G, BDW47G (PNP) 90 80 S) TT 70 A W N ( 60 O TI 50 A P SSI 40 DI R 30 E W PO 20 , D P 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Temperature Derating Curve 5.0 RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -V 3C0C V 3.0 ts BBDDWW4426 , (4N7P (NP)NP) D1 MUST BE FAST RECOVERY TYPES, e.g.: 2.0 (cid:4)(cid:4)1MNS5D862150 U0 SUESDE DA BBOEVLEO WIB (cid:3)IB (cid:3) 10 100 m0A mA RCSCOPE 1.0 tf TUT s) V2 RB μME ((cid:2)(cid:3) 00..75 APPROX TI + 8.0 V 51 D1 (cid:3) 8.0 k (cid:3) 150 t, 0.3 tr 0 0.2 VCC = 30 V V1 + 4.0 V IC/IB = 250 APPROX 25 (cid:3)s 0.1 IB1 = IB2 - 12 V for td and tr, D1 id disconnected 0.07 TJ = 25°C td @ VBE(off) = 0 V tr, tf (cid:2) 10 ns aFnodr NVP2 N= t0est circuit reverse all polarities 0.050.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 DUTY CYCLE = 1.0% IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times Test Circuit Figure 3. Switching Times 1.0 ED) 0.7 D = 0.5 Z TLI 0.5 NA EM NSIOR 0.3 0.2 r(t) EFFECTIVE TRATHERMAL RESISTANCE (N000000....0000..217532 000...001052.01 SINGLE PULSE P(pk)DUTtY1 CtY2CLE, D = t1/t2 RRTDPRJU E(cid:2)(cid:2)C(JJpLACCUkSD)( R=tE- )T V 1=TTIE.M CR9rS( 2EAt= )°A I ACNPRPT/( (cid:2)PWpS JtkL1HC)Y OR F(cid:2)WOJCNR(t )POWER 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response www.onsemi.com 3

BDW42G (NPN), BDW46G, BDW47G (PNP) ACTIVE−REGION SAFE OPERATING AREA 50 50 0.1 ms 0.1 ms 20 20 AMP) 10 TJ = 25°C 1.0 ms AMP) 10 TJ = 25°C 1.0 ms NT ( 5.0 0.5 ms NT ( 5.0 0.5 ms E E RR SECOND BREAKDOWN LIMIT dc RR SECOND BREAKDOWN LIMIT OR CU 21..00 BTHOENRDMINAGL WLIIMRIET ELDIMIT OR CU 21..00 BTHOENRDMINAGL WLIIMRIET ELDIMIT dc ECT 0.5 @ TC = 25°C (SINGLE PULSE) ECT 0.5 @ TC = 25°C (SINGLE PULSE) OLL OLL C 0.2 C 0.2 , C , C I 0.1 I 0.1 BDW46 BDW42 BDW47 0.05 0.05 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. BDW42 Figure 6. BDW46 and BDW47 There are two limitations on the power handling ability of a Second breakdown pulse limits are valid for duty cycles to transistor: average junction temperature and second 10% provided T ≤ 200°C. T may be calculated from J(pk) J(pk) breakdown. Safe operating area curves indicate I − V limits the data in Figure 4. At high case temperatures, thermal C CE of the transistor that must be observed for reliable operation; limitations will reduce the power that can be handled to values i.e., the transistor must not be subjected to greater dissipation less than the limitations imposed by second breakdown. than the curves indicate. The data of Figure 5 and 6 is based on *Linear extrapolation T = 200°C; T is variable depending on conditions. J(pk) C 10,000 300 N 5000 TJ = + 25°C AI G 3000 200 T 2000 N RE 1000 pF) UR E ( LL-SIGNAL C 531200000000 TVICJC =E= 3=2. 503° .AC0 V CAPACITANC 17000 Cib Cob MA C, , SE 3500 BDW46, 47 (PNP) 50 F BDW46, 47 (PNP) h 20 BDW42 (NPN) BDW42 (NPN) 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Small−Signal Current Gain Figure 8. Capacitance www.onsemi.com 4

BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP) 20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 h, DC CURRENT GAINFE5321500000000000000 TJ = 150°-2C(cid:5)555°°CC h, DC CURRENT GAINFE53217700000000000000000 TJ = -12(cid:5)55550°°°CCC 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. DC Current Gain S) 3.0 R VOLTAGE (VOLT 22..62 IC = 2.0 A 4.0 A 6.0 A TJ = 25°C VOLTAGE (VOLTS) 32..06 IC = 2.0 A 4.0 A 6.0 A TJ = 25°C MITTE TTER 2.2 LLECTOR-E 11..84 ECTOR-EMI 1.8 O L 1.4 C OL V, CE 1.0 , CCE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA) Figure 10. Collector Saturation Region 3.0 3.0 TJ = 25°C TJ = 25°C 2.5 2.5 S) S) T T L L O O V V E ( 2.0 E ( 2.0 G G A A T T V, VOL 1.5 VBE(sat) @ IC/IB = 250 V, VOL 1.5 VBE @ VCE = 4.0 V 1.0 VBE @ VCE = 4.0 V 1.0 VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. “On” Voltages www.onsemi.com 5

BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP) +(cid:5)5.0 +(cid:5)5.0 C) C) °mV/ +(cid:5)4.0 *IC/IB (cid:2) 250 °mV/ +(cid:5)4.0 *IC/IB (cid:2) 250 θ, TEMPERATURE COEFFICIENT (V+++----(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)3124123.......00000000 (cid:2)VB *f(cid:2)orV VC BfoEr VCE(sat)25°C to 1-5(cid:5)05°5C°C to 2255°°CC- t(cid:5)o5 51°5C0 ° Cto 25°C θ, TEMPERATURE COEFFICIENTS (V+++----(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)(cid:5)3124123.......00000000 (cid:2)*V(cid:2)BV+ Cfo2 rf5o V°r CBVE CtoE (1s5at0)°C -(cid:5)55°C to +25°C+25°C to- (cid:5)5155°0C°C to +25°C -(cid:5)5.0 -(cid:5)5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients 105 105 REVERSE FORWARD REVERSE FORWARD A) 104 A) 104 μ(cid:2)(cid:3) μ(cid:2)(cid:3) T ( VCE = 30 V T ( VCE = 30 V N 103 N 103 E E R R R R U U R C 102 R C 102 CTO TJ = 150°C CTO TJ = 150°C LE 101 LE 101 L L CO 100°C CO , IC 100 25°C , IC 100 100°C 25°C 10-(cid:5)1 10-(cid:5)1 +(cid:5)0.6 +(cid:5)0.4 +(cid:5)0.2 0 -(cid:5)0.2 -(cid:5)0.4 -(cid:5)0.6 -(cid:5)0.8 -(cid:5)1.0 -(cid:5)1.2 -(cid:5)1.4 -(cid:5)0.6 -(cid:5)0.4 -(cid:5)0.2 0 +(cid:5)0.2 +(cid:5)0.4 +(cid:5)0.6 +(cid:5)0.8 +(cid:5)1.0 +(cid:5)1.2 + 1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Collector Cut−Off Region NPN COLLECTOR PNP COLLECTOR BDW42 BDW46 BDW47 BASE BASE (cid:3) 8.0 k (cid:3) 60 (cid:3) 8.0 k (cid:3) 60 EMITTER EMITTER Figure 14. Darlington Schematic www.onsemi.com 6

BDW42G (NPN), BDW46G, BDW47G (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com BDW42/D 7

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BDW42G BDW46G BDW47G