ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > BD912
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BD912产品简介:
ICGOO电子元器件商城为您提供BD912由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BD912价格参考。STMicroelectronicsBD912封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 100V 15A 3MHz 90W 通孔 TO-220AB。您可以下载BD912参考资料、Datasheet数据手册功能说明书,资料中有BD912 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR POWER PNP TO-220两极晶体管 - BJT PNP General Purpose |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,STMicroelectronics BD912- |
数据手册 | |
产品型号 | BD912 |
不同 Ib、Ic时的 Vce饱和值(最大值) | 3V @ 2.5A,10A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 15 @ 5A,4V |
产品目录页面 | |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | TO-220AB |
其它名称 | 497-7179-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL822/SC84/PF75067?referrer=70071840 |
功率-最大值 | 90W |
包装 | 管件 |
发射极-基极电压VEBO | - 5 V |
商标 | STMicroelectronics |
增益带宽产品fT | 3 MHz |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
工厂包装数量 | 50 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 90 W |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 15 A |
最小工作温度 | - 65 C |
标准包装 | 50 |
电压-集射极击穿(最大值) | 100V |
电流-集电极(Ic)(最大值) | 15A |
电流-集电极截止(最大值) | 1mA |
直流电流增益hFE最大值 | 150 |
直流集电极/BaseGainhfeMin | 15 |
系列 | BD912 |
配置 | Single |
集电极—发射极最大电压VCEO | 100 V |
集电极—基极电压VCBO | 100 V |
频率-跃迁 | 3MHz |
BD909/911 BD910/912 ® COMPLEMENTARY SILICON POWER TRANSISTORS n STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and 3 BD912 respectively. 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD909 BD911 PNP BD910 BD912 VCBO Collector-Base Voltage (IE = 0) 80 100 V VCEO Collector-Emitter Voltage (IB = 0) 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IE,IC Collector Current 15 A IB Base Current 5 A Ptot Total Dissipation at Tc £ 25 oC 90 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC For PNP types voltage and current values are negative. October 1999 1/6
BD909 / BD910 / BD911 / BD912 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.4 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off for BD909/910 VCB = 80 V 500 m A Current (IE = 0) for BD911/912 VCB = 100 V 500 m A Tcase = 150 oC for BD909/910 VCB = 80 V 5 mA for BD911/912 VCB = 100 V 5 mA ICEO Collector Cut-off for BD909/910 VCE = 40 V 1 mA Current (IB = 0) for BD911/912 VCE = 50 V 1 mA IEBO Emitter Cut-off Current VEB = 5 V 1 mA (IC = 0) VCEO(sus)* Collector-Emitter IC = 100 mA for BD909/910 80 V Sustaining Voltage for BD911/912 100 V (IB = 0) VCE(sat)* Collector-Emitter IC = 5 A IB = 0.5 A 1 V Saturation Voltage IC = 10 A IB = 2.5 A 3 V VBE(sat)* Base-Emitter IC = 10 A IB = 2.5 A 2.5 V Saturation Voltage VBE* Base-Emitter Voltage IC = 5 A VCE = 4 V 1.5 V hFE* DC Current Gain IC = 0.5 A VCE = 4 V 40 250 IC = 5 A VCE = 4 V 15 150 IC = 10 A VCE = 4 V 5 fT Transition frequency IC = 0.5 A VCE = 4 V 3 MHz * Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Area Derating Curves 2/6
BD909 / BD910 / BD911 / BD912 DC Current Gain (NPN type) DC Current Gain (PNP type) DC Transconductance (NPN type) DC Transconductance (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/6
BD909 / BD910 / BD911 / BD912 Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6
BD909 / BD910 / BD911 / BD912 TO-220 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 5/6
BD909 / BD910 / BD911 / BD912 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6
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