ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > BD678A
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BD678A产品简介:
ICGOO电子元器件商城为您提供BD678A由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BD678A价格参考¥1.62-¥1.62。STMicroelectronicsBD678A封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP - 达林顿 60V 4A 40W 通孔 SOT-32-3。您可以下载BD678A参考资料、Datasheet数据手册功能说明书,资料中有BD678A 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR DARL PNP SOT-32达林顿晶体管 NPN Power Darlington |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | STMicroelectronics |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,达林顿晶体管,STMicroelectronics BD678A- |
数据手册 | |
产品型号 | BD678A |
不同 Ib、Ic时的 Vce饱和值(最大值) | 2.8V @ 40mA,2A |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 750 @ 2A,3V |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SOT-32-3 |
其它名称 | 497-6658-5 |
其它有关文件 | http://www.st.com/web/catalog/sense_power/FM100/CL822/SC88/PF62779?referrer=70071840 |
功率-最大值 | 40W |
功率耗散 | 40 W |
包装 | 管件 |
发射极-基极电压VEBO | 5 V |
商标 | STMicroelectronics |
安装类型 | 通孔 |
安装风格 | SMD/SMT |
封装 | Tube |
封装/外壳 | TO-225AA,TO-126-3 |
封装/箱体 | SOT-32 |
工厂包装数量 | 50 |
晶体管极性 | PNP |
晶体管类型 | PNP - 达林顿 |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 4 A |
最大集电极截止电流 | 200 uA |
标准包装 | 50 |
电压-集射极击穿(最大值) | 60V |
电流-集电极(Ic)(最大值) | 4A |
电流-集电极截止(最大值) | 500µA |
直流集电极/BaseGainhfeMin | 750 |
系列 | BD678A |
配置 | Single |
集电极—发射极最大电压VCEO | 60 V |
集电极—基极电压VCBO | 60 V |
集电极连续电流 | 4 A |
频率-跃迁 | - |
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com This series of plastic, medium−power silicon PNP Darlington 4.0 AMP DARLINGTON transistors can be used as output devices in complementary POWER TRANSISTORS general−purpose amplifier applications. PNP SILICON Features 45, 60, 80, 100 VOLT, 40 WATT • High DC Current Gain • Monolithic Construction COLLECTOR 2, 4 • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 BASE 3 • These Devices are Pb−Free and are RoHS Compliant* EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 TO−225 BD682G, BD682TG 100 CASE 77−09 STYLE 1 Collector-Base Voltage VCB Vdc BD676G, BD676AG 45 BD678G, BD678AG 60 1 BD680G, BD680AG 80 2 3 BD682G, BD682TG 100 Emitter-Base Voltage VEB 5.0 Vdc MARKING DIAGRAMS Collector Current IC 4.0 Adc Base Current IB 0.1 Adc YWW YWW Total Device Dissipation PD BD6xxG BD6xxAG @ TC = 25°C 40 W Derate above 25°C 0.32 W/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range Y = Year WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the BD6xx = Device Code device. If any of these limits are exceeded, device functionality should not be xx =76, 78, 80, 82, or 82T assumed, damage may occur and reliability may be affected. G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION Thermal Resistance, R(cid:2)JC 3.13 °C/W See detailed ordering and shipping information in the package Junction−to−Case dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 Publication Order Number: December, 2013 − Rev. 14 BD676/D
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) BVCEO Vdc (IC = 50 mAdc, IB = 0) BD676G, BD676AG 45 − BD678G, BD678AG 60 − BD680G, BD680AG 80 − BD682G, BD682TG 100 − Collector Cutoff Current ICEO (cid:3)Adc (VCE = Half Rated VCEO, IB = 0) − 500 Collector Cutoff Current ICBO mAdc (VCB = Rated BVCEO, IE = 0) − 0.2 (VCB = Rated BVCEO. IE = 0, TC = 100°C) − 2.0 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 2.0 ON CHARACTERISTICS DC Current Gain (Note 1) hFE − (IC = 1.5 Adc, VCE = 3.0 Vdc) BD676G, BD678G, BD680G, BD682G 750 − (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG 750 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 1.5 Adc, IB = 30 mAdc) BD678G, BD680G, BD682G − 2.5 (IC = 2.0 Adc, IB = 40 mAdc) BD676AG, BD678AG, BD680AG − 2.8 Base−Emitter On Voltage (Note 1) VBE(on) Vdc (IC = 1.5 Adc, VCE = 3.0 Vdc) BD678G, BD680G, BD682G − 2.5 (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG − 2.5 DYNAMIC CHARACTERISTICS Small−Signal Current Gain hfe − (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) 1.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 (cid:3)s, Duty Cycle ≤ 2.0%. 50 5.0 45 S) P) T 40 M2.0 AT A W 35 T ( N ( EN1.0 TIO 30 RR BONDING WIRE LIMIT A U SIP 25 R C0.5 THERMAL LIMIT at TC = 25°C DIS 20 TO SECONDARY BREAKDOWN LIMIT WER 15 LLEC0.2 O O BD676, 676A P, PD 51.00 I, CC0.1 TC = 25°C BBDD667880,, 667880AA BD682 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 TC, CASE TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area http://onsemi.com 2
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG There are two limitations on the power handling ability of At high case temperatures, thermal limitations will reduce a transistor average junction temperature and secondary the power that can be handled to values less than the breakdown. Safe operating area curves indicate IC − VCE limitations imposed by secondary breakdown. limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. PNP COLLECTOR BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG BASE (cid:2) 8.0 k (cid:2) 120 EMITTER Figure 3. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping BD676G TO−225 500 Units / Box (Pb−Free) BD676AG TO−225 500 Units / Box (Pb−Free) BD678G TO−225 500 Units / Box (Pb−Free) BD678AG TO−225 500 Units / Box (Pb−Free) BD680G TO−225 500 Units / Box (Pb−Free) BD680AG TO−225 500 Units / Box (Pb−Free) BD682G TO−225 500 Units / Box (Pb−Free) BD682TG TO−225 50 Units / Rail (Pb−Free) http://onsemi.com 3
BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com BD676/D 4
Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD682T