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  • 型号: BD677A
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
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产品参数

参数 数值
产品目录 分立半导体产品半导体
描述 TRANSISTOR NPN 60V 4A SOT-32达林顿晶体管 NPN Power Darlington
产品分类 晶体管(BJT) - 单路分离式半导体
品牌 STMicroelectronics
产品手册 点击此处下载产品Datasheet
产品图片
rohs 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 晶体管,达林顿晶体管,STMicroelectronics BD677A-
数据手册 点击此处下载产品Datasheet
产品型号 BD677A
不同 Ib、Ic时的 Vce饱和值(最大值) 2.8V @ 40mA,2A
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) 750 @ 2A,3V
产品目录页面 点击此处下载产品Datasheet
产品种类 达林顿晶体管
供应商器件封装 SOT-32-3
其它名称 497-2600-5
其它有关文件 http://www.st.com/web/catalog/sense_power/FM100/CL822/SC88/PF62777?referrer=70071840
功率-最大值 40W
功率耗散 40 W
包装 管件
发射极-基极电压VEBO 5 V
商标 STMicroelectronics
安装类型 通孔
安装风格 SMD/SMT
封装 Tube
封装/外壳 TO-225AA,TO-126-3
封装/箱体 SOT-32
工厂包装数量 2000
晶体管极性 NPN
晶体管类型 NPN - 达林顿
最大工作温度 + 150 C
最大直流电集电极电流 4 A
最大集电极截止电流 200 uA
标准包装 50
电压-集射极击穿(最大值) 60V
电流-集电极(Ic)(最大值) 4A
电流-集电极截止(最大值) 500µA
直流集电极/BaseGainhfeMin 750
系列 BD677A
配置 Single
集电极—发射极最大电压VCEO 60 V
集电极—基极电压VCBO 60 V
集电极连续电流 4 A
频率-跃迁 -

Datasheet

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BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons http://onsemi.com This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary 4.0 AMPERES general−purpose amplifier applications. POWER TRANSISTORS Features NPN SILICON • High DC Current Gain 60, 80, 100 VOLTS, 40 WATTS • Monolithic Construction • Complementary to BD676, 676A, 678, 678A, 680, 680A, 682 • COLLECTOR 2, 4 BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803 • These Devices are Pb−Free and are RoHS Compliant* BASE 3 MAXIMUM RATINGS Rating Symbol Value Unit EMITTER 1 Collector−Emitter Voltage VCEO Vdc BD675G, BD675AG 45 BD677G, BD677AG 60 BD679G, BD679AG 80 BD681G 100 Collector−Base Voltage VCBO Vdc TO−225 BD675G, BD675AG 45 CASE 77−09 BD677G, BD677AG 60 STYLE 1 BD679G, BD679AG 80 BD681G 100 1 2 3 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 4.0 Adc MARKING DIAGRAMS Base Current IB 1.0 Adc Total Device Dissipation PD @ TC = 25°C 40 W YWW YWW Derate above 25°C 0.32 W/°C BD6xxG BD6xxAG Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range BD6xx/BD6xxA =Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = 75, 77, 79, 81 device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y =Year WW =Work Week THERMAL CHARACTERISTICS G =Pb−Free Package Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case R(cid:2)JC 3.13 °C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 − Rev. 15 BD675/D

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage, (Note 1) BVCEO Vdc (IC = 50 mAdc, IB = 0) BD675G, BD675AG 45 − BD677G, BD677AG 60 − BD679G, BD679AG 80 − BD681G 100 − Collector Cutoff Current ICEO (cid:3)Adc (VCE = Half Rated VCEO, IB = 0) − 500 Collector Cutoff Current ICBO mAdc (VCB = Rated BVCEO, IE = 0) − 0.2 (VCB = Rated BVCEO, IE = 0, TC = 100’C) − 2.0 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 2.0 ON CHARACTERISTICS DC Currert Gain, (Note 1) hFE − (IC = 1.5 Adc,VCE = 3.0 Vdc) BD675G, BD677G, BD679G, BD681G 750 − (IC = 2.0 Adc, VCE = 3.0 Vdc) BD675AG, BD677AG, BD679AG 750 − Collector−Emitter Saturation Voltage, (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) VCE(sat) Vdc BD677G, BD679G, BD681G − 2.5 (IC = 2.0 Adc, IB = 40 mAdc) BD675AG, BD677AG, BD679AG − 2.8 Base−Emitter On Voltage, (Note 1) VBE(on) Vdc (IC = 1.5 Adc, VCE = 3.0 Vdc) BD677G, BD679G, BD681G − 2.5 (IC = 2.0 Adc, VCE = 3 0 Vdc) BD675AG, BD677AG, BD679AG − 2.5 DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe − (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) 1.0 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width (cid:2) 300 (cid:3)s, Duty Cycle (cid:2) 2.0%. 50 5.0 45 ATTS) 40 AMP)2.0 ATION (W 3305 URRENT (1.0 BONDING WIRE LIMIT DISSIP 2205 TOR C0.5 TSHEECROMNADLALRYY L BIMRIETA aKt DTOC W= N25 L°ICMIT WER 15 LLEC0.2 O O BD675, 675A P, PD 51.00 I, CC0.1 TC = 25°C BBDD667779,, 667779AA BD681 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 TC, CASE TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area http://onsemi.com 2

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G There are two limitations on the power handling ability of At high case temperatures, thermal limitations will reduce a transistor average junction temperature and secondary the power that can be handled to values less than the breakdown. Safe operating area curves indicate IC − VCE limitations imposed by secondary breakdown. limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. NPN COLLECTOR BD675G, BD675AG BD677G, BD677AG BD679G, BD679AG BD681G BASE (cid:3) 8.0 k (cid:3) 120 EMITTER Figure 3. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping BD675G TO−225 500 Units / Box (Pb−Free) BD675AG TO−225 500 Units / Box (Pb−Free) BD677G TO−225 500 Units / Box (Pb−Free) BD677AG TO−225 500 Units / Box (Pb−Free) BD679G TO−225 500 Units / Box (Pb−Free) BD679AG TO−225 500 Units / Box (Pb−Free) BD681G TO−225 500 Units / Box (Pb−Free) http://onsemi.com 3

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G PACKAGE DIMENSIONS TO−225 CASE 77−09 4 ISSUE AC 1 3 2 3 2 1 FRONT VIEW BACK VIEW E NOTES: 1.DIMENSIONING AND TOLERANCING PER A1 ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. Q A 3.NUMBER AND SHAPE OF LUGS OPTIONAL. PIN 4 MILLIMETERS BACKSIDE TAB DIM MIN MAX A 2.40 3.00 A1 1.00 1.50 b 0.60 0.90 D b2 0.51 0.88 P c 0.39 0.63 D 10.60 11.10 E 7.40 7.80 1 2 3 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 P 2.90 3.30 L1 Q 3.80 4.20 STYLE 1: L PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE 2X b2 2X e b c FRONT VIEW SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com BD675/D 4

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BD675 BD675A BD677 BD677A BD679 BD679A BD681