BD179G Plastic Medium-Power Silicon NPN Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com • High DC Current Gain • BD179 is complementary with BD180 3.0 AMPERES • These Devices are Pb−Free and are RoHS Compliant* POWER TRANSISTORS NPN SILICON MAXIMUM RATINGS 80 VOLTS, 30 WATTS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc COLLECTOR Collector−Base Voltage VCBO 80 Vdc 2 Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 3.0 Adc 3 Base Current IB 1.0 Adc BASE To@tal TPCo w=e 2r5 D(cid:2)iCssipation PD 30 W 1 Derate above 25(cid:2)C 240 mW/(cid:2)C EMITTER Operating and Storage Junction TJ, Tstg –65 to +150 (cid:2)C Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the TO−225 Recommended Operating Conditions may affect device reliability. CASE 77 STYLE 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 2 1 Thermal Resistance, Junction−to−Case R(cid:2)JC 4.16 (cid:2)C/W MARKING DIAGRAM YWW BD179G Y = Year WW = Work Week BD179 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BD179G TO−225 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please (Pb−Free) download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: Noember, 2013 − Rev. 15 BD179/D

BD179G ELECTRICAL CHARACTERISTICS (TC = 25(cid:2)C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) V(BR)CEO Vdc (IC = 0.1 Adc, IB = 0) 80 − Collector Cutoff Current ICBO mAdc (VCB = 80 Vdc, IE = 0) − 0.1 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0 DC Current Gain hFE − (IC = 0.15 A, VCE = 2.0 V) 63 160 (IC = 1.0 A, VCE = 2.0 V) 15 − Collector−Emitter Saturation Voltage (Note 1) VCE(sat) Vdc (IC = 1.0 Adc, IB = 0.1 Adc) − 0.8 Base−Emitter On Voltage (Note 1) VBE(on) Vdc (IC = 1.0 Adc, VCE = 2.0 Vdc) − 1.3 Current−Gain − Bandwidth Product fT MHz (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 3.0 − 1. Pulse Test: Pulse Width ≤ 300 As, Duty Cycle ≤ 2.0%. 10 The Safe Operating Area Curves indicate IC − VCE limits 100 (cid:3)s P)7.0 below which the device will not enter secondary breakdown. M NT (A53..00 1.0 ms Capopllleiccatobrle l oSaadfe l iAneres af otor sapveociidf icca cuisricnugi tas cmautasstt rfoalplh wici tfhaiinlu trhee. RE2.0 5.0 ms To insure operation below the maximum T , R J CU dc power−temperature derating must be observed for both OR 1.0 TJ = 150°C steady state and pulse power conditions. T0.7 C LE0.5 SECONDARY BREAKDOWN LIMITATION L O THERMAL LIMITATION C0.3 I, C0.2 (SBIGASNEIF-IECMANITTT EARBO DVISES IICP A=T 2I.O0N A MISP) PULSE DUTY CYCLE < 10% 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area http://onsemi.com 2

BD179G S) 1.0 T L O V GE ( 0.8 TA IC = 0.1 A 0.25 A 0.5 A 1.0 A L O V R 0.6 E MITT TJ = 25°C -E 0.4 R O T C E L 0.2 L O C , E C V 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region 1000 1.5 LIZED) 750000 VCE = 2.0 V TJ = 25°C A 1.2 M R 300 O URRENT GAIN (N 1275000000 TTJJ == ++ 12550°C°C OLTAGE (VOLTS) 00..96 VBE(sat) @ VICB/EIB @ = V10CE = 2.0 V C V DC 30 TJ = + 55°C 0.3 , E 20 hF VCE(sat) @ IC/IB = 10 10 0 2.03.0 5.0 10 20 30 50 100 200300 500 10002000 2.03.0 5.0 10 20 30 50 100 200300 500 10002000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages 1.0 T N 0.7 D = 0.5 E SI 0.5 N A E TRNCE 0.3 D = 0.2 VA 0.2 ED EFFECTIMAL RESIST00.0.17 DDD === 000...00151 SINGLE PULSE (cid:2)(cid:2)(cid:2)JJJCCC( ==t) 43=.. 15r(6°t)C° C(cid:2)/WJ/WC T MYPAX P(pk) LIZER0.05 D CURVES APPLY FOR POWER MATH PULSE TRAIN SHOWN t1 NOR 00..0032 READ TIME AT t1 t2 r(t), TJ(pk) - TC = P(pk) (cid:2)JC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3

BD179G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AB E A1 NOTES: 1.DIMENSIONING AND TOLERANCING PER Q A ASME Y14.5M, 1994. 2.CONTROLLING DIMENSION: MILLIMETERS. 3.NUMBER AND SHAPE OF LUGS OPTIONAL. MILLIMETERS DIM MIN MAX A 2.40 3.00 D A1 1.00 1.50 P b 0.60 0.90 b2 0.51 0.88 c 0.39 0.63 1 2 3 D 10.60 11.10 E 7.40 7.80 e 2.04 2.54 L 14.50 16.63 L1 1.27 2.54 L1 P 2.90 3.30 Q 3.80 4.20 L STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 2X b2 2X e b c ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com BD179/D 4

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