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BCX70J产品简介:
ICGOO电子元器件商城为您提供BCX70J由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BCX70J价格参考。Fairchild SemiconductorBCX70J封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN 45V 200mA 125MHz 350mW Surface Mount SOT-23-3。您可以下载BCX70J参考资料、Datasheet数据手册功能说明书,资料中有BCX70J 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR NPN 45V 200MA SOT-23两极晶体管 - BJT NPN/ 45V/ 200mA |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,Fairchild Semiconductor BCX70J- |
数据手册 | |
产品型号 | BCX70J |
PCN封装 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 550mV @ 1.25mA,50mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 250 @ 2mA,5V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-23-3 |
其它名称 | BCX70JCT |
功率-最大值 | 350mW |
包装 | 剪切带 (CT) |
单位重量 | 60 mg |
发射极-基极电压VEBO | 5 V |
商标 | Fairchild Semiconductor |
增益带宽产品fT | 125 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 350 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.2 A |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 45V |
电流-集电极(Ic)(最大值) | 200mA |
电流-集电极截止(最大值) | 20nA |
直流电流增益hFE最大值 | 460 |
直流集电极/BaseGainhfeMin | 250 |
系列 | BCX70J |
配置 | Single |
集电极—发射极最大电压VCEO | 45 V |
集电极—基极电压VCBO | 45 V |
集电极—射极饱和电压 | 0.55 V |
集电极连续电流 | 0.2 A |
频率-跃迁 | 125MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
B C X 7 0 J BCX70J General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 45 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature -55 ~ 150 °C STG • Refer to KST3904 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =2.0mA, I =0 45 V CEO C B BV Emitter-Base Breakdown Voltage I =1.0µA, I =0 5 V EBO E C I Collector Cut-off Current V =32V, V =0 20 nA CES CE BE I Emitter Cut-off Current V =4V, I =0 20 nA EBO EB C h DC Current Gain V =5V, I =10µA 40 FE CE C V =5V, I =2.0mA 250 460 CE C V =1V, I =50mA 90 CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.25mA 0.35 V CE C B I =50mA, I =1.25mA 0.55 V C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =0.25mA 0.6 0.85 V BE C B I =50mA, I =1.25mA 0.7 1.05 V C B V (on) Base-Emitter On Voltage I =2.0mA, V =5V 0.55 0.75 V BE C CE f Current Gain Bandwidth Product I =10mA, V =5V, f=100MHz 125 MHz T C CE C Output Capacitance V =10V, I =0, f=1MHz 4.5 pF ob CB E NF Noise Figure V =5V, I =0.2mA 6 dB CE C R =2KΩ, f=1KHz S t Turn On Time I =10mA, I =1.0mA 150 ns ON C B1 t Turn Off Time V =3.6V, I =1.0mA 800 ns OFF BB B2 R =R =5KΩ, R =990Ω 1 2 L Marking AJ ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
B Package Dimensions C X 7 0 J SOT-23 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
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