Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

B C W 7 1 BCW71 C E SOT-23 B Mark: K1 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V 3 VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BCW71 PD Total Device Dissipation 350 mW Derate above 25°C 2.8 mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation

B NPN General Purpose Amplifier C (continued) W 7 1 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown IC = 1.0 mA, IB = 0 45 V Voltage V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 50 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current VCB = 20 V, IE = 0 100 µA VCB = 20 V, IE = 0, TA = 100°C 10 ON CHARACTERISTICS hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 110 220 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA 0.85 V VBE(on) Base-Emitter On Voltage IC = 2.0 mA, VCE = 5.0 V 0.6 0.75 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, 330 MHz f = 35 MHz Cobo Output Capacitance VCE = 10 V, IE = 0, f = 1.0 MHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 9.0 pF NF Noise Figure IC = 0.2 mA, VCE = 5.0 V, 10 dB RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation GAIN400 vs Collector Current GE (V)0.4 Voltage vs Collector Current ENT 125 °C Vce = 5V OLTA β = 10 ULSED CURR230000 25 °C R-EMITTER V00..23 25 °C PICAL P100 - 40 °C LLECTO0.1 125 °C - 40 °C Y O h - TFE 010 2I0 C - C3O0LLEC50TOR CU1R00RENT 2(m00A)300 500 V - CCESAT 1 I C - COLL1E0CTOR CURRENT1 0(m0A) 400

B NPN General Purpose Amplifier C (continued) W 7 1 Typical Characteristics (continued) Base-Emitter Saturation Base-Emitter ON Voltage vs V) Voltage vs Collector Current Collector Current R-EMITTER VOLTAGE (00..681 - 40 °C 25 °C 125 °C TTER ON VOLTAGE (V)00..681 - 40 °C 25 °C 125 °C O MI LLECT0.4 β = 10 ASE-E0.4 V C E = 5V V - COBESAT0.20.1 I C - C1OLLECTOR CU1R0RENT (mA)100 300 V - BBEON0.2 1 I C - COLLEC1T0OR CURRENT 1(m00A) 500 Collector-Cutoff Current Input and Output Capacitance vs Ambient Temperature vs Reverse Voltage A) 10 100 T (n V C B = 60V f = 1.0 MHz EN F) URR E (p 10 3 C C Cib CTOR 1 CITAN Cob LE PA 1 L A O C C I - CBO0.1 0.1 25 50 75 100 125 150 0.1 1 10 100 TA - AMBIENT TEMPERATURE ( ° C) Vc e - COLLECTOR VOLTAGE (V) Switching Times vs Power Dissipation vs Collector Current Ambient Temperature 300 350 270 ts mW)300 240 N ( E (nS)112581000 IB1V = c Ic B 2= =1 0Ic V / 10 SSIPATIO220500 SOT-23 TIM120 R DI150 90 tf tr OWE100 60 P 30 td P - D 50 0 0 10 20 30 50 100 200 300 0 25 50 75 100 125 150 I C - COLLECTOR CURRENT (mA) TEMPERATURE ( o C)

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