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BCW70,215产品简介:
ICGOO电子元器件商城为您提供BCW70,215由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BCW70,215价格参考¥0.24-¥0.24。NXP SemiconductorsBCW70,215封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP 45V 100mA 100MHz 250mW 表面贴装 TO-236AB(SOT23)。您可以下载BCW70,215参考资料、Datasheet数据手册功能说明书,资料中有BCW70,215 详细功能的应用电路图电压和使用方法及教程。
Nexperia USA Inc. 生产的 BCW70 和 215 型号晶体管属于双极型晶体管 (BJT),它们在多种应用场景中具有广泛的应用。以下是对这两种型号的具体应用场景分析: BCW70 晶体管的应用场景 BCW70 是一种低电压、低功耗的 NPN 晶体管,主要用于信号放大和开关应用。其典型应用场景包括: 1. 音频信号放大:由于 BCW70 的低噪声特性,它非常适合用于音频设备中的前置放大器,能够提供清晰的音频信号。 2. 传感器接口电路:在传感器信号处理中,BCW70 可以用作信号放大器,将微弱的传感器输出信号放大到可检测的水平。 3. 小功率开关应用:例如,在智能家居设备中,BCW70 可以用于控制LED灯或其他低功耗设备的开关状态。 4. 电源管理电路:在一些小型电源管理系统中,BCW70 可以作为电流调节器或稳压器的一部分,确保系统稳定运行。 215 晶体管的应用场景 215 型号(通常指的是 PNP 类型的晶体管)同样适用于多种应用场景,特别是在需要电流放大的场合。其典型应用场景包括: 1. 负载驱动:215 晶体管可以用于驱动高阻抗负载,如继电器、小型电机等,通过提供足够的电流来确保负载正常工作。 2. 反相放大器:在模拟电路设计中,215 晶体管可以用作反相放大器,将输入信号反转并放大,适用于某些特定的信号处理需求。 3. 电平转换:在数字电路中,215 晶体管可以用于实现电平转换,例如将 TTL 电平转换为 CMOS 电平,确保不同逻辑电平之间的兼容性。 4. 保护电路:在电源保护电路中,215 晶体管可以用于过流保护,当电流超过设定值时,自动切断电源,保护后续电路免受损坏。 总的来说,BCW70 和 215 晶体管因其优异的性能和可靠性,被广泛应用于消费电子、工业控制、汽车电子等领域,满足各种低功耗、高性能的需求。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR PNP 45V 100MA SOT23两极晶体管 - BJT TRANS GP TAPE-7 |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,NXP Semiconductors BCW70,215- |
数据手册 | |
产品型号 | BCW70,215 |
不同 Ib、Ic时的 Vce饱和值(最大值) | 150mV @ 2.5mA,50mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 215 @ 2mA,5V |
产品种类 | 两极晶体管 - BJT |
供应商器件封装 | SOT-23 (TO-236AB) |
其它名称 | 568-11104-2 |
功率-最大值 | 250mW |
包装 | 带卷 (TR) |
发射极-基极电压VEBO | 5 V |
商标 | NXP Semiconductors |
增益带宽产品fT | 100 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | PNP |
晶体管类型 | PNP |
最大功率耗散 | 250 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 0.1 A |
最小工作温度 | - 65 C |
标准包装 | 3,000 |
电压-集射极击穿(最大值) | 45V |
电流-集电极(Ic)(最大值) | 100mA |
电流-集电极截止(最大值) | 100nA(ICBO) |
直流电流增益hFE最大值 | 215 at 2 mA at 5 V |
直流集电极/BaseGainhfeMin | 215 at 2 mA at 5 V |
配置 | Single |
集电极—发射极最大电压VCEO | 45 V |
集电极—基极电压VCBO | 50 V |
零件号别名 | BCW70 T/R |
频率-跃迁 | 100MHz |
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
DISCRETE SEMICONDUCTORS DATA SHEET BCW69; BCW70 PNP general purpose transistors Product data sheet 2004 Feb 06 Supersedes data of 1999 Apr 19
NXP Semiconductors Product data sheet PNP general purpose transistors BCW69; BCW70 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BCW71 and BCW72. handbook, halfpage 3 3 MARKING 1 TYPE NUMBER MARKING CODE(1) 2 BCW69 H1* 1 2 BCW70 H2* Top view MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BCW69 − plastic surface mounted package; 3 leads SOT23 BCW70 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter − −50 V CBO V collector-emitter voltage open base; I = −2 mA − −45 V CEO C V emitter-base voltage open collector − −5 V EBO I collector current (DC) − −100 mA C I peak collector current − −200 mA CM I peak base current − −200 mA BM P total power dissipation T ≤ 25 °C − 250 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb 2004 Feb 06 2
NXP Semiconductors Product data sheet PNP general purpose transistors BCW69; BCW70 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 500 K/W th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T = 25 °C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = −20 V − − −100 nA CBO E CB I = 0; V = −20 V; T = 100 °C − − −10 μA E CB j I emitter cut-off current I = 0; V = −5 V − − −100 nA EBO C EB h DC current gain I = −10 μA; V = −5 V FE C CE BCW69 − 90 − BCW70 − 150 − DC current gain I = −2 mA; V = −5 V C CE BCW69 120 − 260 BCW70 215 − 500 V collector-emitter saturation I = −10 mA; I = −0.5 mA − −80 −300 mV CEsat C B voltage I = −50 mA; I = −2.5 mA; note 1 − −150 − mV C B V base-emitter saturation voltage I = −10 mA; I = −0.5 mA − −720 − mV BEsat C B I = −50 mA; I = −2.5 mA; note 1 − −810 − mV C B V base-emitter voltage I = −2 mA; V = −5 V −600 − −750 mV BE C CE C collector capacitance I = I = 0; V = −10 V; − 4.5 − pF c E e CB f = 1 MHz f transition frequency I = −10 mA; V = −5 V; 100 − − MHz T C CE f = 100 MHz F noise figure I = −200 μA; V = −5 V; − − 10 dB C CE R = 2 kΩ; f = 1 kHz; B = 200 Hz S Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2004 Feb 06 3
NXP Semiconductors Product data sheet PNP general purpose transistors BCW69; BCW70 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC JEITA PROJECTION 04-11-04 SOT23 TO-236AB 06-03-16 2004 Feb 06 4
NXP Semiconductors Product data sheet PNP general purpose transistors BCW69; BCW70 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Feb 06 5
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/04/pp6 Date of release: 2004 Feb 06 Document order number: 9397 750 12405