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BCV27产品简介:
ICGOO电子元器件商城为您提供BCV27由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BCV27价格参考¥0.24-¥0.24。Fairchild SemiconductorBCV27封装/规格:晶体管 - 双极 (BJT) - 单, Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 220MHz 350mW Surface Mount SOT-23-3。您可以下载BCV27参考资料、Datasheet数据手册功能说明书,资料中有BCV27 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR NPN DARL 30V SOT23达林顿晶体管 SOT23 NPN DARLINGTON |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | Fairchild Semiconductor |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,达林顿晶体管,Fairchild Semiconductor BCV27- |
数据手册 | |
产品型号 | BCV27 |
PCN封装 | |
PCN组件/产地 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 1V @ 100µA, 100mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 20000 @ 100mA,5V |
产品目录页面 | |
产品种类 | |
供应商器件封装 | SOT-23 |
其它名称 | BCV27CT |
功率-最大值 | 350mW |
包装 | 剪切带 (CT) |
单位重量 | 60 mg |
发射极-基极电压VEBO | 10 V |
商标 | Fairchild Semiconductor |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | TO-236-3,SC-59,SOT-23-3 |
封装/箱体 | SOT-23 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | NPN - 达林顿 |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 1.2 A |
最大集电极截止电流 | 0.1 uA |
最小工作温度 | - 55 C |
标准包装 | 1 |
电压-集射极击穿(最大值) | 30V |
电流-集电极(Ic)(最大值) | 1.2A |
电流-集电极截止(最大值) | - |
直流集电极/BaseGainhfeMin | 4000 |
系列 | BCV27 |
配置 | Single |
集电极—发射极最大电压VCEO | 30 V |
集电极—基极电压VCBO | 40 V |
零件号别名 | BCV27_NL |
频率-跃迁 | 220MHz |
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
B C V 2 October 2014 7 — N P N BCV27 D a r NPN Darlington Transistor li n g t o n T r a Description n s C i This device is designed for applications requiring s t extremely high current gain at collector currents to 1.0 A. o r Sourced from process 05. E SOT-23 B Mark: FF Ordering Information Part Number Marking Package Packing Method BCV27 FF SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BCV27 Rev. 1.1.0
B C Thermal Characteristics(3) V 2 Values are at T = 25°C unless otherwise noted. 7 A — Symbol Parameter Max. Unit N Total Device Dissipation 350 mW P P N D Derate Above 25°C 2.8 mW/°C D RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W ar l i n Note: g 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. to n T r a Electrical Characteristics n s Values are at TA = 25°C unless otherwise noted. is t o Symbol Parameter Conditions Min. Typ. Max. Unit r V Collector-Emitter Breakdown Voltage I = 10 mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 nA, I = 0 10 V (BR)EBO E C I Collector Cut-Off Current V = 30 V, I = 0 0.1 μA CBO CB E I Emitter Cut-Off Current V = 10 V, I = 0 0.1 μA EBO EB C I = 1.0 mA, V = 5.0 V 4000 C CE h DC Current Gain I = 10 mA, V = 5.0 V 10000 FE C CE I = 100 mA, V = 5.0 V 20000 C CE V (sat) Collector-Emitter Saturation Voltage I = 100 mA, I = 0.1 mA 1.0 V CE C B V (sat) Base-Emitter Saturation Voltage I = 100 mA, I = 0.1 mA 1.5 V BE C B I = 30 mA, V = 5.0 V, f Current Gain - Bandwidth Product C CE 220 MHz T f = 100 MHz V = 30 V, I = 0, C Collector Capacitance CB E 3.5 pF c f = 1.0 MHz © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BCV27 Rev. 1.1.0 2
B C Typical Performance Characteristics V 2 7 — T GAIN (K) 250 V C E = 5V OLTAGE (V) 1.6 β = 1000 NPN D SED CURREN 125000 25 °C 125 °C R EMITTER V 01..82 - 40 °C arlingto L 100 O 25°C n CAL PU 50 - 40 °C OLLECT 0.4 125 °C Tra PI C n h - TYFE 00.001 I C - CO0.0LL1ECTOR CURR0E.1NT (A) 1 V - CESAT 01 I C - COL1L0ECTOR CURRE10N0T (mA) 1000 sisto r Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Collector Current E (V) 2 β = 1000 GE (V) 2 G A A T LT 1.6 - 40 °C OL 1.6 - 40 °C VO 25 °C N V 25 °C TTER 1.2 125 °C ER O 1.2 125 °C MI TT E 0.8 MI 0.8 E E V - BASBESAT0.401 I - COL1L0ECTOR CURRE10N0T (mA) 1000 V - BASE BEON0.401 I - COL1L0ECTOR CURRE10N0T V (C mE =A )5V 1000 C C Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base Emitter On Voltage vs. Collector Current Collector Current A) 100 V) T (n VC B = 30V GE ( 62.5 REN 10 LTA 62 R O OR CU 1 OWN V 616.15 CT D E K L A 60.5 OL 0.1 RE I - CCBO0.0125 50 75 100 125 BV - BCER596.050.1 1 10 100 1000 T - AMBIENT TEMPERATURE ( ° C) RESISTANCE (k Ω ) A Figure 5. Collector Cut-Off Current vs. Figure 6. Collector-Emitter Breakdown Voltage with Ambient Temperature Resistance Between Emitter-Base © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BCV27 Rev. 1.1.0 3
B C Typical Performance Characteristics (Continued) V 2 7 — N MHz) 500 PN f = 1.0 MHz T ( V c e = 5V C D 20 U 400 F) D a p O r ANCE ( 10 Cib DTH PR 300 lingt APACIT 5 Cob ANDWI 200 on T C N B 100 ra AI n G s 20.1 V - CO1LLECTOR VOLT1A0GE(V) 100 f - T 01 IC - COLLECTO10R CU2R0RENT (5m0A) 100 150 isto r Figure 7. Input and Output Capacitance vs. Figure 8. Gain Bandwidth Product vs. Reverser Voltage Collector Current 350 W) m 300 N ( O 250 ATI SOT-23 SIP 200 S DI 150 R E W 100 O P P - D 50 0 0 25 50 75 100 125 150 TEMPERATURE ( o C) Figure 9. Power Dissipation vs. Ambient Temperature © 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com BCV27 Rev. 1.1.0 4
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1
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