BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. http://onsemi.com Features MEDIUM POWER NPN SILICON • High Current • HIGH CURRENT TRANSISTOR The SOT−223 Package Can Be Soldered Using Wave or Reflow • SURFACE MOUNT SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. COLLECTOR 2,4 The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • BASE The PNP Complement is BCP69T1 1 • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and EMITTER 3 PPAP Capable* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 4 Compliant 1 2 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) SOT−223 CASE 318E Rating Symbol Value Unit STYLE 1 Collector−Emitter Voltage VCEO 20 Vdc MARKING DIAGRAM Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc ACYAW(cid:2) Collector Current − Peak (Note 2) ICM 3.0 Adc (cid:2) Base Current − Continuous IB 0.4 Adc Base Current − Peak IBM 0.4 Adc CA = Specific Device Code Total Power Dissipation PD A = Assembly Location @ TA = 25°C (Note 1) 1.5 W Y = Year Derate above 25°C 12 mW/°C W = Work Week (cid:2) = Pb−Free Package Operating and Storage Temperature TJ, Tstg −65 to 150 °C Range (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. Device Package Shipping† x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. 2. Reference SOA curve for IC peak. BCP68T1G SOT−223 1,000/Tape & Reel (Pb−Free) THERMAL CHARACTERISTICS SBCP68T1G* SOT−223 1,000/Tape & Reel Characteristic Symbol Max Unit (Pb−Free) Thermal Resistance, Junction−to−Ambient R(cid:2)JA 83.3 °C/W BCP68T3G SOT−223 4,000/Tape & Reel (Surface Mounted) (Pb−Free) Lead Temperature for Soldering, TL 260 °C †For information on tape and reel specifications, 0.0625 in from case including part orientation and tape sizes, please Time in Solder Bath 10 Sec refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: January, 2014 − Rev. 9 BCP68T1/D

BCP68T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CES Vdc (IC = 100 (cid:3)Adc, IE = 0) 25 − − Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 20 − − Emitter−Base Breakdown Voltage V(BR)EBO Vdc (IE = 10 (cid:3)Adc, IC = 0) 5.0 − − Collector−Base Cutoff Current ICBO (cid:3)Adc (VCB = 25 Vdc, IE = 0) − − 10 Emitter−Base Cutoff Current IEBO (cid:3)Adc (VEB = 5.0 Vdc, IC = 0) − − 10 ON CHARACTERISTICS DC Current Gain hFE − (IC = 5.0 mAdc, VCE = 10 Vdc) 50 − − (IC = 500 mAdc, VCE = 1.0 Vdc) 85 − 375 (IC = 1.0 Adc, VCE = 1.0 Vdc) 60 − − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 1.0 Adc, IB = 100 mAdc) − − 0.5 Base−Emitter On Voltage VBE(on) Vdc (IC = 1.0 Adc, VCE = 1.0 Vdc) − − 1.0 DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = 10 mAdc, VCE = 5.0 Vdc) − 60 − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 15 − pF Output Capacitance (VEB = 5 Vdc, IE = 0, f = 1.0 MHz) Cibo − 145 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL ELECTRICAL CHARACTERISTICS Hz) 300 M T ( C DU 200 O GAIN 320000 TJ = 125°C H PR ENT = 25°C WIDT h, DC CURRFE100 = -55°C NT‐GAIN‐BAND 1750000 fVT =JC E=3 0=2 5M1°0HC Vz VCE = 1.0 V RE R U C 10 (cid:2), T 30 1.0 10 100 1000 f 10 100 200 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. Current-Gain-Bandwidth Product http://onsemi.com 2

BCP68T1G TYPICAL ELECTRICAL CHARACTERISTICS 1.0 80 TJ = 25°C TJ = 25°C 0.8 VBE(sat) @ IC/IB = 10 70 S) pF) LT E ( E (VO 0.6 VBE(on) @ VCE = 1.0 V TANC 60 OLTAG 0.4 APACI 50 V C V, , b Ci 0.2 40 VCE(sat) @ IC/IB = 10 0 30 1.0 10 100 1000 0 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (V) Figure 3. “On” Voltage Figure 4. Capacitance 25 -(cid:4)0.8 C) ° TJ = 25°C mV/ T ( -1.2 F) 20 EN NCE (p EFFICI -1.6 APACITA 15 URE CO -(cid:4)2.0 R(cid:2)VB for VBE , Cb RAT o E C 10 P EM -(cid:4)2.4 T , B V θ 5.0 R -(cid:4)2.8 0 5.0 10 15 20 1.0 10 100 1000 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Base−Emitter Temperature Coefficient 1.0 10 TJ = 25°C GE (V) 0.8 NT (A) TA RE 100 ms VOL 0.6 = 1000 mA UR R C CTO OR 1 1 ms LE 0.4 IC= 10 mA = 50 mA = 100 mA CT 10 ms OL E C L , E OL C0.2 C V = 500 mA , C I 0 0.1 0.01 0.1 1.0 10 100 1 10 100 IB, BASE CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 7. Saturation Region Figure 8. Safe Operating Area http://onsemi.com 3

BCP68T1G TYPICAL ELECTRICAL CHARACTERISTICS 310 50 320900 TJ = 25°C 45 TJ = 25°C f = 1 MHz f = 1 MHz 280 40 F)270 F) E (p226500 E (p 35 C240 C 30 AN230 AN T220 T 25 CI210 CI PA200 PA 20 A190 A C C 15 C, ib111876000 C, ob 10 150 5 140 130 0 0 1 2 3 4 5 0 5 10 15 20 25 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 9. Input Capacitance Figure 10. Output Capacitance http://onsemi.com 4

BCP68T1G PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D NOTES: b1 (cid:5)(cid:2)1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. (cid:5)(cid:2)2. CONTROLLING DIMENSION: INCH. 4 MILLIMETERS INCHES HE E DAIM 1M.5IN0 N1.O6M3 M1.A75X 0M.0I6N0 0N.O06M4 0M.0A6X8 1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004 b 0.60 0.75 0.89 0.024 0.030 0.035 b1 2.90 3.06 3.20 0.115 0.121 0.126 c 0.24 0.29 0.35 0.009 0.012 0.014 b D 6.30 6.50 6.70 0.249 0.256 0.263 e1 E 3.30 3.50 3.70 0.130 0.138 0.145 e e 2.20 2.30 2.40 0.087 0.091 0.094 e1 0.85 0.94 1.05 0.033 0.037 0.041 L 0.20 −−− −−− 0.008 −−− −−− C L1 1.50 1.75 2.00 0.060 0.069 0.078 (cid:2) A H(cid:2)E 60.7°0 7.−00 71.03°0 0.206°4 0.2−76 01.208°7 0.08 (0003) A1 STYLE 1: L L1 PIN 1.BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 6.3 2.3 2.3 0.248 0.091 0.091 2.0 0.079 (cid:2) (cid:3) 1.5 mm SCALE 6:1 0.059 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com BCP68T1/D 5

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