Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

BCM857BV; BCM857BS; BCM857DS PNP/PNP matched double transistors Rev. 06 — 28 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package NPN/NPN Matched version of complement NXP JEITA BCM857BV SOT666 - BCM847BV BC857BV BCM857BS SOT363 SC-88 BCM847BS BC857BS BCM857DS SOT457 SC-74 BCM847DS - 1.2 Features n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - - 45 V CEO I collector current - - - 100 mA C h DCcurrent gain V =- 5V; 200 290 450 FE CE I =- 2mA C

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Per device h /h h matching V =- 5V; [1] 0.9 1 - FE1 FE2 FE CE I =- 2mA C V - V V matching V =- 5V; [2] - - 2 mV BE1 BE2 BE CE I =- 2mA C [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 4 emitter TR2 TR1 5 base TR2 1 2 3 1 2 3 6 collector TR1 001aab555 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCM857BV - plastic surface-mounted package; 6leads SOT666 BCM857BS SC-88 plastic surface-mounted package; 6leads SOT363 BCM857DS SC-74 plastic surface-mounted package (TSOP6); 6leads SOT457 4. Marking Table 5. Marking codes Type number Marking code[1] BCM857BV 3B BCM857BS A9* BCM857DS R8 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 2 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - - 50 V CBO V collector-emitter voltage open base - - 45 V CEO V emitter-base voltage open collector - - 5 V EBO I collector current - - 100 mA C I peak collector current single pulse; - - 200 mA CM t £ 1ms p P total power dissipation T £ 25(cid:176) C tot amb SOT666 [1][2] - 200 mW SOT363 [1] - 200 mW SOT457 [1] - 250 mW Per device P total power dissipation T £ 25(cid:176) C tot amb SOT666 [1][2] - 300 mW SOT363 [1] - 300 mW SOT457 [1] - 380 mW T junction temperature - 150 (cid:176) C j T ambient temperature - 65 +150 (cid:176) C amb T storage temperature - 65 +150 (cid:176) C stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from in free air th(j-a) junction to ambient SOT666 [1][2] - - 625 K/W SOT363 [1] - - 625 K/W SOT457 [1] - - 500 K/W BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 3 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 7. Thermal characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Per device R thermal resistance from in free air th(j-a) junction to ambient SOT666 [1][2] - - 416 K/W SOT363 [1] - - 416 K/W SOT457 [1] - - 328 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base cut-off V =- 30V; - - - 15 nA CBO CB current I =0A E V =- 30V; - - - 5 m A CB I =0A; E T =150(cid:176) C j I emitter-base cut-off V =- 5V; - - - 100 nA EBO EB current I =0A C h DCcurrent gain V =- 5V; - 250 - FE CE I =- 10m A C V =- 5V; 200 290 450 CE I =- 2mA C V collector-emitter I =- 10mA; - - 50 - 200 mV CEsat C saturation voltage I =- 0.5mA B I =- 100mA; - - 200 - 400 mV C I =- 5mA B V base-emitter I =- 10mA; [1] - - 760 - mV BEsat C saturation voltage I =- 0.5mA B I =- 100mA; [1] - - 920 - mV C I =- 5mA B V base-emitter voltage V =- 5V; [2] - 600 - 650 - 700 mV BE CE I =- 2mA C V =- 5V; [2] - - - 760 mV CE I =- 10mA C C collector capacitance V =- 10V; - - 2.2 pF c CB I =i =0A; E e f=1MHz C emitter capacitance V =- 0.5V; - 10 - pF e EB I =i =0A; C c f=1MHz BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 4 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit f transition frequency V =- 5V; 100 175 - MHz T CE I =- 10mA; C f=100MHz NF noise figure V =- 5V; - 1.6 - dB CE I =- 0.2mA; C R =2kW ; S f=10Hz to 15.7kHz V =- 5V; - 3.1 - dB CE I =- 0.2mA; C R =2kW ; S f=1kHz; B=200Hz Per device h /h h matching V =- 5V; [3] 0.9 1 - FE1 FE2 FE CE I =- 2mA C V - V V matching V =- 5V; [4] - - 2 mV BE1 BE2 BE CE I =- 2mA C [1] V decreases by about 1.7mV/K with increasing temperature. BEsat [2] V decreases by about 2mV/K with increasing temperature. BE [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 5 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors - 0.20 006aaa540 600 006aaa541 IB (mA) = - 2.5 IC - 2.25 (A) - 2.0 hFE - 0.16 - 1.75 - 1.5 (1) - 1.25 400 - 0.12 - 1.0 (2) - 0.75 - 0.08 - 0.5 200 (3) - 0.25 - 0.04 0 0 0 - 2 - 4 - 6 - 8 - 10 - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 VCE (V) IC (mA) T =25(cid:176) C V =- 5V amb CE (1) T =100(cid:176) C amb (2) T =25(cid:176) C amb (3) T =- 55(cid:176) C amb Fig 1. Collector current as a function of Fig 2. DCcurrent gain as a function of collector collector-emitter voltage; typical values current; typical values - 1.3 006aaa542 - 10 006aaa543 VBEsat (V) - 1.1 VCEsat (V) - 0.9 - 1 (1) - 0.7 (2) (3) - 0.5 - 10- 1 (1) (2) (3) - 0.3 - 0.1 - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) I /I =20 I /I =20 C B C B (1) T =- 55(cid:176) C (1) T =100(cid:176) C amb amb (2) T =25(cid:176) C (2) T =25(cid:176) C amb amb (3) T =100(cid:176) C (3) T =- 55(cid:176) C amb amb Fig 3. Base-emitter saturation voltage as a function Fig 4. Collector-emitter saturation voltage as a of collector current; typical values function of collector current; typical values BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 6 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors - 1 006aaa544 103 006aaa545 VBE (V) fT (MHz) - 0.8 102 - 0.6 - 0.4 10 - 10- 1 - 1 - 10 - 102 - 103 - 1 - 10 - 102 IC (mA) IC (mA) V =- 5V; T =25(cid:176) C V =- 5V; T =25(cid:176) C CE amb CE amb Fig 5. Base-emittervoltageasafunctionofcollector Fig 6. Transitionfrequencyasafunctionofcollector current; typical values current; typical values 006aaa546 006aaa547 8 15 Cc Ce (pF) (pF) 13 6 11 4 9 2 7 0 5 0 - 2 - 4 - 6 - 8 - 10 0 - 2 - 4 - 6 VCB (V) VEB (V) f=1MHz; T =25(cid:176) C f=1MHz; T =25(cid:176) C amb amb Fig 7. Collector capacitance as a function of Fig 8. Emitter capacitance as a function of collector-base voltage; typical values emitter-base voltage; typical values BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 7 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 8. Application information V- VCC OUT1 OUT2 R1 IN1 TR1 TR2 IN2 lout TR1 TR2 V+ 006aaa524 006aaa526 Fig 9. Current mirror Fig 10. Differential amplifier 9. Package outline 1.7 0.6 2.2 1.1 1.5 0.5 1.8 0.8 6 5 4 6 5 4 0.45 0.15 0.3 0.1 1.7 1.3 2.2 1.35 1.5 1.1 2.0 1.15 pin 1 pin 1 index index 1 2 3 1 2 3 0.5 00..2177 00..1088 0.65 00..32 00..2150 1 1.3 Dimensions in mm 04-11-08 Dimensions in mm 06-03-16 Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88) 3.1 1.1 2.7 0.9 6 5 4 0.6 0.2 3.0 1.7 2.5 1.3 pin 1 index 1 2 3 0.40 0.26 0.95 0.25 0.10 1.9 Dimensions in mm 04-11-08 Fig 13. Package outline SOT457 (SC-74) BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 8 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 BCM857BV SOT666 2mm pitch, 8mm tape and reel - - -315 - 4mm pitch, 8mm tape and reel - -115 - - BCM857BS SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 BCM857DS SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 - - -135 4mm pitch, 8mm tape and reel; T2 [3] -125 - - -165 [1] For further information and the availability of packing methods, seeSection14. [2] T1: normal taping [3] T2: reverse taping BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 9 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6· ) 0.25 0.3 0.538 (2· ) (2· ) placement area 0.55 2 1.7 1.075 (2· ) solder paste occupied area 0.325 0.375 (4· ) (4· ) Dimensions in mm 1.7 0.45 0.6 (4· ) (2· ) 0.5 0.65 (4· ) (2· ) sot666_fr Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOT666 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2· ) (4· ) (4· ) solder resist solder paste 0.5 0.6 occupied area (4· ) (2· ) 0.6 Dimensions in mm (4· ) 1.8 sot363_fr Fig 15. Reflow soldering footprint SOT363 (SC-88) BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 10 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 16. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 solder lands 0.95 solder resist 3.30 2.825 0.45 0.55 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 11 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 12 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM857BV_BS_DS_6 20090828 Product data sheet - BCM857BV_BS_DS_5 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 12 “Package outline SOT363 (SC-88)”: updated • Figure 14 “Reflow soldering footprint SOT666”: updated • Figure 15 “Reflow soldering footprint SOT363 (SC-88)”: updated • Figure 16 “Wave soldering footprint SOT363 (SC-88)”: updated • Figure 18 “Wave soldering footprint SOT457 (SC-74)”: updated BCM857BV_BS_DS_5 20060627 Product data sheet - BCM857BS_DS_4 BCM857BS_DS_4 20060216 Product data sheet - BCM857BS_DS_3 BCM857BS_DS_3 20060130 Product data sheet - BCM857BS_2 BCM857BS_2 20050411 Product data sheet - BCM857BS_1 BCM857BS_1 20040914 Product data sheet - - BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 13 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nxp.com. 13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —NXP Semiconductors products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nxp.com/profile/terms, including those pertaining to warranty, 13.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,NXPSemiconductorsdoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —NXPSemiconductorsreservestherighttomake Export control —This document as well as the item(s) described herein changes to information published in this document, including without may be subject to export control regulations. Export might require a prior limitation specifications and product descriptions, at any time and without authorization from national authorities. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this Suitability for use —NXP Semiconductors products are not designed, document, and as such is not complete, exhaustive or legally binding. authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected 13.4 Trademarks to result in personal injury, death or severe property or environmental Notice:Allreferencedbrands,productnames,servicenamesandtrademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com BCM857BV_BS_DS_6 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 — 28 August 2009 14 of 15

BCM857BV/BS/DS NXP Semiconductors PNP/PNP matched double transistors 15. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Application information. . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 15 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 August 2009 Document identifier: BCM857BV_BS_DS_6