BCM856BS; BCM856BS/DG BCM856DS; BCM856DS/DG PNP/PNP matched double transistors Rev. 01 — 7 August 2008 Product data sheet 1. Product profile 1.1 General description PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package Package configuration Nexperia JEITA BCM856BS SOT363 SC-88 very small BCM856BS/DG BCM856DS SOT457 SC-74 small BCM856DS/DG 1.2 Features n Current gain matching n Base-emitter voltage matching n Drop-in replacement for standard double transistors n AEC-Q101 qualified 1.3 Applications n Current mirror n Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V collector-emitter voltage open base - - -65 V CEO I collector current - - -100 mA C h DCcurrent gain V =-5V; 200 290 450 FE CE I =-2mA C

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Per device h /h h matching V =-5V; [1] 0.9 1 - FE1 FE2 FE CE I =-2mA C V -V V matching V =-5V; [2] - - 2 mV BE1 BE2 BE CE I =-2mA C [1] The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1 emitterTR1 6 5 4 6 5 4 2 baseTR1 3 collectorTR2 TR2 4 emitterTR2 TR1 5 baseTR2 1 2 3 1 2 3 6 collectorTR1 001aab555 sym018 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BCM856BS SC-88 plastic surface-mounted package; 6leads SOT363 BCM856BS/DG BCM856DS SC-74 plastic surface-mounted package (TSOP6); 6leads SOT457 BCM856DS/DG BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 2 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 4. Marking Table 5. Marking codes Type number Marking code[1] BCM856BS *BS BCM856BS/DG PB* BCM856DS DS BCM856DS/DG R9 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V collector-base voltage open emitter - -80 V CBO V collector-emitter voltage open base - -65 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -100 mA C I peak collector current single pulse; - -200 mA CM t £ 1ms p P total power dissipation T £ 25(cid:176)C tot amb BCM856BS(SOT363) [1] - 200 mW BCM856BS/DG(SOT363) BCM856DS(SOT457) [1] - 250 mW BCM856DS/DG(SOT457) Per device P total power dissipation T £ 25(cid:176)C tot amb BCM856BS(SOT363) [1] - 300 mW BCM856BS/DG(SOT363) BCM856DS(SOT457) [1] - 380 mW BCM856DS/DG(SOT457) T junction temperature - 150 (cid:176)C j T ambient temperature -55 +150 (cid:176)C amb T storage temperature -65 +150 (cid:176)C stg [1] Device mounted on an FR4Printed-Circuit Board(PCB), single-sided copper, tin-plated and standard footprint. BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 3 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R thermal resistance from junction to in free air th(j-a) ambient BCM856BS(SOT363) [1] - - 625 K/W BCM856BS/DG(SOT363) BCM856DS(SOT457) [1] - - 500 K/W BCM856DS/DG(SOT457) Per device R thermal resistance from junction to in free air th(j-a) ambient BCM856BS(SOT363) [1] - - 416 K/W BCM856BS/DG(SOT363) BCM856DS(SOT457) [1] - - 328 K/W BCM856DS/DG(SOT457) [1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 8. Characteristics T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit Per transistor I collector-base cut-off V =-30V; - --15 nA CBO CB current I =0A E V =-30V; - --5 mA CB I =0A; E T =150(cid:176)C j I emitter-base cut-off V =- 5V; - --100 nA EBO EB current I =0A C h DCcurrent gain V =-5V; - 250 - FE CE I =-10 m A C V =-5V; 200 290 450 CE I =-2mA C V collector-emitter I =-10mA; - -50 -200 mV CEsat C saturation voltage I =-0.5mA B I =-100mA; - -200 -400 mV C I =-5mA B V base-emitter saturation I =-10mA; [1] - -760 - mV BEsat C voltage I =-0.5mA B I =-100mA; [1] - -920 - mV C I =-5mA B BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 4 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors Table 8. Characteristics …continued T =25(cid:176) C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V base-emitter voltage V =-5V; [2] -600 -650 -700 mV BE CE I =-2mA C V =-5V; [2] - --760 mV CE I =-10mA C C collector capacitance V =-10V; - - 2.2 pF c CB I =i =0A; E e f=1MHz C emitter capacitance V =- 0.5V; - 10 - pF e EB I =i =0A; C c f=1MHz f transition frequency V =-5V; 100 175 - MHz T CE I =-10mA; C f=100MHz NF noise figure V =-5V; - 1.6 - dB CE I =-0.2mA; C R =2kW ; S f=10Hz to 15.7kHz V =-5V; - 3.1 - dB CE I =-0.2mA; C R =2kW ; S f=1kHz; B=200Hz Per device h /h h matching V =-5V; [3] 0.9 1 - FE1 FE2 FE CE I =-2mA C V -V V matching V =-5V; [4] - - 2 mV BE1 BE2 BE CE I =-2mA C [1] V decreases by about 1.7mV/K with increasing temperature. BEsat [2] V decreases by about 2mV/K with increasing temperature. BE [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 5 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors -0.20 006aaa540 600 006aaa541 IB (mA) = -2.5 IC -2.25 (A) -2.0 hFE -0.16 -1.75 -1.5 (1) -1.25 400 -0.12 -1.0 (2) -0.75 -0.08 -0.5 200 (3) -0.25 -0.04 0 0 0 -2 -4 -6 -8 -10 -10 -2 -10 -1 -1 -10 -10 2 -10 3 VCE (V) IC (mA) T =25(cid:176)C V =-5V amb CE (1) T =100(cid:176)C amb (2) T =25(cid:176)C amb (3) T =-55 (cid:176)C amb Fig 1. Collector current as a function of Fig 2. DCcurrent gain as a function of collector collector-emitter voltage; typical values current; typical values - 1.3 006aaa542 - 10 006aaa543 VBEsat (V) - 1.1 VCEsat (V) - 0.9 - 1 (1) - 0.7 (2) (3) - 0.5 - 10- 1 (1) (2) (3) - 0.3 - 0.1 - 10- 2 - 10- 1 - 1 - 10 - 102 - 103 - 10- 1 - 1 - 10 - 102 - 103 IC (mA) IC (mA) I /I =20 I /I =20 C B C B (1) T =-55 (cid:176)C (1) T =100(cid:176)C amb amb (2) T =25(cid:176)C (2) T =25(cid:176)C amb amb (3) T =100(cid:176)C (3) T =-55 (cid:176)C amb amb Fig 3. Base-emitter saturation voltage as a function Fig 4. Collector-emitter saturation voltage as a of collector current; typical values function of collector current; typical values BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 6 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors -1 006aaa544 103 006aaa545 VBE (V) fT (MHz) -0.8 102 -0.6 -0.4 10 -10 -1 -1 -10 -10 2 -10 3 -1 -10 -10 2 IC (mA) IC (mA) V =-5V; T =25(cid:176)C V =-5V; T =25(cid:176)C CE amb CE amb Fig 5. Base-emittervoltageasafunctionofcollector Fig 6. Transitionfrequencyasafunctionofcollector current; typical values current; typical values 006aaa546 006aaa547 8 15 Cc Ce (pF) (pF) 13 6 11 4 9 2 7 0 5 0 -2 -4 -6 -8 -10 0 -2 -4 -6 VCB (V) VEB (V) f=1MHz; T =25(cid:176)C f=1MHz; T =25(cid:176)C amb amb Fig 7. Collector capacitance as a function of Fig 8. Emitter capacitance as a function of collector-base voltage; typical values emitter-base voltage; typical values BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 7 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 8. Application information V- VCC OUT1 OUT2 R1 IN1 TR1 TR2 IN2 lout TR1 TR2 V+ 006aaa524 006aaa526 Fig 9. Current mirror Fig 10. Differential amplifier 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standardQ101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10. Package outline 2.2 1.1 3.1 1.1 1.8 0.8 2.7 0.9 6 5 4 0.45 6 5 4 0.6 0.15 0.2 2.2 1.35 3.0 1.7 2.0 1.15 pin 1 2.5 1.3 pin 1 index index 1 2 3 1 2 3 0.65 00..32 00..2150 0.95 00..4205 00..2160 1.3 1.9 Dimensions in mm 06-03-16 Dimensions in mm 04-11-08 Fig 11. Package outline SOT363(SC-88) Fig 12. Package outline SOT457(SC-74) BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 8 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 11. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BCM856BS SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 BCM856BS/DG SOT363 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 BCM856DS SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 BCM856DS/DG SOT457 4mm pitch, 8mm tape and reel; T1 [2] -115 -135 4mm pitch, 8mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, seeSection15. [2] T1: normal taping [3] T2: reverse taping 12. Soldering 2.65 solder lands 2.35 1.5 0.6 0.5 0.4 (2· ) (4· ) (4· ) solder resist solder paste 0.5 0.6 occupied area (4· ) (2· ) 0.6 Dimensions in mm (4· ) 1.8 sot363_fr Fig 13. Reflow soldering footprint SOT363(SC-88) BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 9 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 1.5 solder lands 4.5 0.3 2.5 solder resist occupied area 1.5 Dimensions in mm preferred transport 1.3 1.3 direction during soldering 2.45 5.3 sot363_fw Fig 14. Wave soldering footprint SOT363(SC-88) 3.45 1.95 0.45 0.55 solder lands 0.95 (6·) (6·) 3.3 2.825 solder resist 0.95 solder paste occupied area 0.7 Dimensions in mm (6·) 0.8 (6·) 2.4 sot457_fr Fig 15. Reflow soldering footprint SOT457(SC-74) BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 10 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 5.3 1.5 (4·) solder lands 1.475 solder resist 0.45 5.05 (2·) occupied area 1.475 Dimensions in mm preferred transport direction during soldering 1.45 (6·) 2.85 sot457_fw Fig 16. Wave soldering footprint SOT457(SC-74) BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 11 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 13. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCM856BS_BCM856DS_1 20080807 Productdatasheet - - BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 12 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.Thelatestproductstatus information is available on the Internet at URLhttp://www.nexperia.com. 14.2 Definitions damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in Applications —Applications that are described herein for any of these modifications or additions. Nexperia does not give any products are for illustrative purposes only. Nexperia makes no representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the informationincludedhereinandshallhavenoliabilityfortheconsequencesof specified use without further testing or modification. use of such information. Limiting values —Stress above one or more limiting values (as defined in Short data sheet —A short data sheet is an extract from a full data sheet theAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanent withthesameproducttypenumber(s)andtitle.Ashortdatasheetisintended damagetothedevice.Limitingvaluesarestressratingsonlyandoperationof forquickreferenceonlyandshouldnotbereliedupontocontaindetailedand the device at these or any other conditions above those given in the full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting sheet, which is available on request via the local Nexperia sales values for extended periods may affect device reliability. office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale —Nexperia products are sold full data sheet shall prevail. subjecttothegeneraltermsandconditionsofcommercialsale,aspublished athttp://www.nexperia.com/profile/terms, including those pertaining to warranty, 14.3 Disclaimers intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such General —Information in this document is believed to be accurate and terms and conditions, the latter will prevail. reliable.However,Nexperiadoesnotgiveanyrepresentationsor No offer to sell or license —Nothing in this document may be interpreted warranties,expressedorimplied,astotheaccuracyorcompletenessofsuch or construed as an offer to sell products that is open for acceptance or the information and shall have no liability for the consequences of use of such grant,conveyanceorimplicationofanylicenseunderanycopyrights,patents information. or other industrial or intellectual property rights. Right to make changes —Nexperiareservestherighttomake Quick reference data —The Quick reference data is an extract of the changes to information published in this document, including without product data given in the Limiting values and Characteristics sections of this limitation specifications and product descriptions, at any time and without document, and as such is not complete, exhaustive or legally binding. notice.Thisdocumentsupersedesandreplacesallinformationsuppliedprior to the publication hereof. Suitability for use —Nexperia products are not designed, 14.4 Trademarks authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Notice:Allreferencedbrands,productnames,servicenamesandtrademarks malfunction of a Nexperia product can reasonably be expected are the property of their respective owners. to result in personal injury, death or severe property or environmental 15. Contact information For more information, please visit:http://www.nexperia.com For sales office addresses, please send an email to:salesaddresses@nexperia.com BCM856BS_BCM856DS_1 © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 01 — 7 August 2008 13 of 14

BCM856BS; BCM856DS Nexperia PNP/PNP matched double transistors 16. Contents 1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2 4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Application information. . . . . . . . . . . . . . . . . . . 8 9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8 9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 11 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 15 Contact information. . . . . . . . . . . . . . . . . . . . . 13 16 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 07 August 2008