Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Sep 03

NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION PNP transistor in a SOT323 plastic package. handbook, halfpage 3 NPN complements: BC849W and BC850W. 3 MARKING 1 TYPE MARKING TYPE MARKING 2 NUMBER CODE NUMBER CODE BC859W 4D∗ BC860W 4H∗ 1 2 BC859BW 4B∗ BC860BW 4F∗ Top view MAM048 BC859CW 4C∗ BC860CW 4G∗ Note 1. ∗ = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC859W − −30 V BC860W − −50 V V collector-emitter voltage open base CEO BC859W − −30 V BC860W − −45 V V emitter-base voltage open collector − −5 V EBO I collector current (DC) − −100 mA C I peak collector current − −200 mA CM I peak base current − −200 mA BM P total power dissipation T ≤ 25 °C; note 1 − 200 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2

NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 625 K/W th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = −30 V − − −15 nA CBO E CB I = 0; V = −30 V; T = 150 °C − − −4 μA E CB j I emitter cut-off current I = 0; V = −5 V − − −100 nA EBO C EB h DC current gain I = −2 mA; V = −5 V; FE C CE BC859W; BC860W see Figs 2 and 3 220 − 800 BC859BW; BC860BW 220 − 475 BC859CW; BC860CW 420 − 800 V collector-emitter saturation I = −10 mA; I = −0.5 mA − − −300 mV CEsat C B voltage I = −100 mA; I = −5 mA; note 1 − − −650 mV C B V base-emitter voltage I = −2 mA; V = −5 V 600 − 750 mV BE C CE I = −10 mA; V = −5 V − − 820 mV C CE C collector capacitance I = i = 0; V = −10 V; f = 1 MHz − − 5 pF c E e CB C emitter capacitance I = i = 0; V = −500 mV; f = 1 MHz − 10 − pF e C c EB f transition frequency I = −10 mA; V = −5 V; f = 100 MHz 100 − − MHz T C CE F noise figure; I = −200 μA; V = −5 V; R = 2 kΩ; − − 4 dB C CE S BC859W; BC860W; f = 10 Hz to 15.7 kHz BC859BW; BC860BW; I = −200 μA; V = −5 V; R = 2 kΩ; − − 4 dB C CE S BC859CW; BC860CW f = 1 kHz; B = 200 Hz Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 1999 Apr 12 3

NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W MBH727 400 handbook, full pagewidth hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC859BW; BC860BW. Fig.2 DC current gain; typical values. MBH728 600 handbook, full pagewidth hFE 500 VCE = −5 V 400 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 BC859CW; BC860CW. Fig.3 DC current gain; typical values. 1999 Apr 12 4

NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 0.65 0.2 0.2 0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT323 SC-70 97-02-28 1999 Apr 12 5

NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 12 6

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/04/pp7 Date of release: 1999 Apr 12 Document order number: 9397 750 05583