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B C 8 5 August 2015 7 S — P N P BC857S , M PNP, Multi-Chip, General-Purpose Amplifier u l t i - C h i p Description , G e This device is designed for general-purpose amplifier n e applications at collector currents to 200 mA. Sourced r a from Process 68. l - P u E2 r B2 p o C1 E2 C2 s e A SC70-6 C2 B2 B1 m B1 p Mark: 3C pin #1 E1 l i f C1 E1 ie NOTE: The pinouts are symmetrical; pin 1 and pin r 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. Figure 1. Device Package Figure 2. Internal Connections Ordering Information Part Number Top Mark Package Packing Method BC857S 3C SC70 6L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -45 V CEO V Collector-Base Voltage -50 V CES V Collector-Base Voltage -50 V CBO V Emitter-Base Voltage -5.0 V EBO I Collector Current - Continuous -200 mA C T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150 °C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com BC857S Rev. 1.3 1

B C Thermal Characteristics(3) 8 5 7 Values are at T = 25°C unless otherwise noted. A S — Symbol Parameter Max. Unit P Total Device Dissipation 300 mW N P D Derate Above 25°C 2.4 mW/°C P , M RθJA Thermal Resistance, Junction to Ambient 415 °C/W u l t Note: i - C 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. h i p , G Electrical Characteristics e n e Values are at TA = 25°C unless otherwise noted. ra Symbol Parameter Conditions Min. Typ. Max. Unit l- P u V Collector-Emitter Breakdown Voltage I = -10 mA, I = 0 -45 V (BR)CEO C B r p V(BR)CES Collector-Base Breakdown Voltage IC = -10 μA, IE = 0 -50 V o s V Collector-Base Breakdown Voltage I = -10 μA, I = 0 -50 V e (BR)CBO C E V Emitter-Base Breakdown Voltage I = -10 μA, I = 0 -5 V A (BR)EBO E C m V = -30 V -15 nA p CB ICBO Collector Cut-Off Current VCB = -30 V, TA = 150 °C -4 μA lifie h DC Current Gain I = -2.0 mA, V = -5.0 V 125 630 r FE C CE I = -10 mA, I = -0.5 mA -0.30 C B V (sat) Collector-Emitter Saturation Voltage V CE I = -100 mA, I = -5.0 mA -0.65 C B I = -2.0 mA, V = -5.0 V -0.60 -0.75 C CE V (on) Base-Emitter On Voltage V BE I = -10 mA, V = -5.0 V -0.82 C CE I = -10 mA, V = -5.0 V, f Current Gain-Bandwidth Product C CE 200 MHz T f = 100 MHz C Output Capacitance V = -10 V, f = 1.0 MHz 3.5 pF ob CB I = -0.2 mA, V = -5.0 V, C CE NF Noise Figure R = 2.0 kΩ, f = 1.0 kHz, 2.5 dB S BW = 200 Hz © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com BC857S Rev. 1.3 2

B C Typical Performance Characteristics 8 5 7 S — AIN 500 GE (V) 0.3 PN RENT G 400 125 °C V C E = 5V VOLTA 0.25 β = 10 P, M R R u SED CU 300 25 °C EMITTE 00.1.25 lti-C L R h AL PU 200 ECTO 0.1 25 °C ip, C 100 - 40 °C L G TYPI COL 0.05 125 °C - 40 °C en h - FE 00.01 I 0C .-1 COLLECT1OR CURR1E0NT (mA1)00 V - CESAT 00.1 I C - CO1LLECTOR CU1R0RENT (mA)100 300 eral - P Figure 3. Typical Pulsed Current Gain vs. Figure 4. Collector-Emitter Saturation Voltage vs. u r Collector Current Collector Current p o s e V) A E (V) 1.2 β = 10 GE ( 1 mp G A TTER VOLTA 00..681 - 40 °C 25 °C 125 °C ER ON VOLT 00..68 - 40°C 25 °C 125 °C lifier MI TT E MI 0.4 E 0.4 E V - BASBESAT0.200.1 I - CO1LLECTOR CU1R0RENT (mA)100 300 V - BASE BEON0.200.1 I - CO1LLECTOR CUR1R0ENT V ( Cm E A =) 5V100 200 C C Figure 5. Base-Emitter Saturation Voltage vs. Figure 6. Base-Emitter On Voltage vs. Collector Current Collector Current A) 100 V) T (n VC B = 50V GE (95 N A RE 10 LT90 R O U V OR C 1 OWN 85 CT D LE AK80 OL 0.1 RE C B75 I - CBO0.0125 50 75 100 125 BV - CER700.1 1 10 100 1000 T - AMBIENT TEMPERATURE ( ° C) RESISTANCE (k ΩΩ ) A Figure 7. Collector Cut-Off Current vs. Figure 8. Collector-Emitter Breakdown Voltage with Ambient Temperature Resistance between Emitter-Base © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com BC857S Rev. 1.3 3

B C Typical Performance Characteristics (Continued) 8 5 7 S — AGE (V) 4 100 f = 1.0 MHz PN T Ta = 25°C P VOL pF) , M R-EMITTER 23 Ic = 100 uA 50 mA 300 mA ACITANCE ( 10 Cib ulti-Ch TO AP Cob ip EC C , L 1 G L O e C n V - CE0 100 300 700 20004000 0.1 V C E - CO1LLECTOR VOLT10AGE (V) 100 era I B - BASE CURRENT (uA) l- P Figure 9. Collector Saturation Region Figure 10. Input and Output Capacitance vs. u Reverse Voltage r p o s e z) A MH 40 300 m T ( V c e = 5V 270 ts p UC 240 lif OD 30 210 ie DTH PR 20 ME (nS) 115800 IB1V = c Ic B 2= =1 0Ic V / 10 r WI TI 120 BAND 10 6900 tf tr N 30 AI td G 0 f - T 01 I - COLLEC1T0OR C2U0RRENT 5(0mA) 100 150 10 I2 C 0 - CO3L0LECTO5R0 CURRE1N0T0 (mA)200 300 C Figure 11. Gain Bandwidth Product vs. Figure 12. Switching Times vs. Collector Current Collector Current 500 W) N ( 400 O TI SC70-6 A P SI 300 S DI R 200 E W O P 100 P - D 0 0 25 50 75 100 125 150 TEMPERATURE ( ° C) Figure 13. Power Dissipation vs. Ambient Temperature © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com BC857S Rev. 1.3 4

B C Physical Dimensions 8 5 7 S — P N SYMM P C L , M 2.00±0.20 A 0.65 u 0.50 MIN lt i - 6 4 B C h i p , PIN ONE G 1.25±0.10 1.90 e n e r a l - 1 3 P u (0.25) 0.30 rp 0.15 0.40 MIN o 0.10 A B s 0.65 1.30 e A LAND PATTERN RECOMMENDATION m 1.30 p l i f 1.00 SEE DETAIL A ie 0.80 r 1.10 0.80 0.10 0.10 C C 0.00 2.10±0.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE A) THIS PACKAGE CONFORMS TO EIAJ PLANE SC-88, 1996. (R0.10) B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS 0.25 0.10 OR MOLD FLASH. 0.20 D) DRAWING FILENAME: MKT-MAA06AREV6 0.46 30° 0.26 0° SCALE: 60X Figure 14. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE © 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com BC857S Rev. 1.3 5

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