BC856BDW1T1G, SBC856BDW1T1G(cid:2)Series, BC857BDW1T1G, SBC857BDW1T1G(cid:2)Series, BC858CDW1T1G Series Dual General Purpose www.onsemi.com Transistors PNP Duals SOT−363/SC−88 These transistors are designed for general purpose amplifier CASE 419B applications. They are housed in the SOT−363/SC−88 which is STYLE 1 designed for low power surface mount applications. (3) (2) (1) Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and Q1 Q2 PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* (4) (5) (6) MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit 6 Collector−Emitter Voltage VCEO V BC856, SBC856 −65 3x M(cid:2) BC857, SBC857 −45 (cid:2) BC858 −30 Collector−Base Voltage VCBO V 1 BC856, SBC856 −80 BC857, SBC857 −50 3x = Specific Device Code BC858 −30 x = B, F, G, or L Emitter−Base Voltage VEBO −5.0 V (See Ordering Information) M = Date Code Collector Current −Continuous IC −100 mAdc (cid:2) = Pb−Free Package Collector Current − Peak IC −200 mAdc (Note: Microdot may be in either location) THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit See detailed ordering and shipping information in the package Total Device Dissipation PD 380 mW dimensions section on page 6 of this data sheet. Per Device 250 mW FR−5 Board (Note 1) TA = 25°C Derate Above 25°C 3.0 mW/°C Thermal Resistance, R(cid:2)JA °C/W Junction−to−Ambient 328 Junction and Storage Temperature TJ, Tstg −55 to +150 °C Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2016 − Rev. 10 BC856BDW1T1/D

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO V (IC = −10 mA) BC856, SBC856 Series −65 − − BC857, SBC857 Series −45 − − BC858 Series −30 − − Collector−Emitter Breakdown Voltage V(BR)CES V (IC = −10 (cid:3)A, VEB = 0) BC856, SBC856 Series −80 − − BC857B, SBC857B Only −50 − − BC858 Series −30 − − Collector−Base Breakdown Voltage V(BR)CBO V (IC = −10 (cid:3)A) BC856, SBC856 Series −80 − − BC857, SBC857 Series −50 − − BC858 Series −30 − − Emitter−Base Breakdown Voltage V(BR)EBO V (IE = −1.0 (cid:3)A) BC856, SBC856 Series −5.0 − − BC857, SBC857 Series −5.0 − − BC858 Series −5.0 − − Collector Cutoff Current ICBO (VCB = −30 V) − − −15 nA (VCB = −30 V, TA = 150°C) − − −4.0 (cid:3)A ON CHARACTERISTICS DC Current Gain hFE − (IC = −10 (cid:3)A, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B − 150 − BC857C, SBC857C, BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B 220 290 475 BC857C, SBC857C, BC858C 420 520 800 Collector−Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base−Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base−Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82 SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product fT MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) 100 − − Output Capacitance Cob pF (VCB = −10 V, f = 1.0 MHz) − − 4.5 Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k(cid:4), f = 1.0 kHz, BW = 200 Hz) − − 10 www.onsemi.com 2

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC856/SBC856 -1.0 ED) TJ = 25°C RMALIZ VTAC E= =2 5-°5C.0 V -0.8 VBE(sat) @ IC/IB = 10 O S) N 2.0 T N ( OL -0.6 GAI 1.0 E (V VBE @ VCE = -5.0 V T G N A CURRE 0.5 V, VOLT -0.4 DC -0.2 , FE 0.2 VCE(sat) @ IC/IB = 10 h 0 -0.1 -0.2 -1.0-2.0 -5.0 -10 -20 -50 -100-200 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain Figure 2. “On” Voltage S) -2.0 -1.0 LT C) O ° R-EMITTER VOLTAGE (V ---110...268 -1I0C m=A -20 mA -50 mA -100 mA -200 mA URE COEFFICIENT (mV/ ---112...482 (cid:2)VB for VBE -55°C to 125°C O AT LLECT -0.4 MPER -2.6 O E V, CCE 0 TJ = 25°C θ, TVB -3.0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient 40 T C DU VCE = -5.0 V TJ = 25°C RO 500 P F) 20 Cib TH p D E ( WI 200 C D N N PACITA 81.00 N - BA 100 A AI C 6.0 G 50 C, Cob T- N E 4.0 R R 20 U C (cid:2), T 2.0 f -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current−Gain − Bandwidth Product www.onsemi.com 3

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/SBC857/BC858 2.0 -1.0 AIN 1.5 VCE = -10 V -0.9 TA = 25°C T G TA = 25°C -0.8 VBE(sat) @ IC/IB = 10 N RE 1.0 S) -0.7 ED DC CUR 0.7 TAGE (VOLT --00..65 VBE(on) @ VCE = -10 V LIZ 0.5 OL -0.4 A V M V, -0.3 R O N -0.2 h, FE 0.3 -0.1 VCE(sat) @ IC/IB = 10 0.2 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages -2.0 1.0 LTAGE (V) -1.6 TA = 25°C °T (mV/C) 1.2 -55°C to +125°C O N V E R CI 1.6 TE -1.2 FFI T E EMI CO 2.0 CTOR- -0.8 -IC1 0= mA IC = -50 mA IC = -200 mA ATURE 2.4 V, COLLECE -0.4 IC = -20 mA IC = -100 mA , TEMPERVB 2.8 0 θ -0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient z) 10 H 400 M Cib T ( 300 C 7.0 U TA = 25°C OD 200 R TANCE (pF) 53..00 Cob NDWIDTH P 110500 VTAC E= =2 5-°1C0 V CI A 80 A B CAP N - 60 C, 2.0 GAI - 40 T N E 30 R R U C 1.0-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f(cid:2), T 20-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product www.onsemi.com 4

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series 1.0 D = 0.5 HERMALMALIZED) 0.1 000.0..125 TR SIENT CE (NO 0.02 P(pk) ZR(cid:2)(cid:2)JJAA( t=) =3 2r8(t°)C R/W(cid:2)JA MAX NN D CURVES APPLY FOR POWER r(t), TRARESISTA0.01 0.01 t1 t2 PRTJUE(pALkSD) E− T TTIMCR EA= I ANPT (pS tk1H) OR(cid:2)WJCN(t) DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 1.0(cid:3)k 10(cid:3)k 100(cid:3)k 1.0(cid:3)M t, TIME (ms) Figure 13. Thermal Response -200 The safe operating area curves indicate IC−VCE limits 1 s 3 ms of the transistor that must be observed for reliable operation. A)-100 Collector load lines for specific circuits must fall below the m RENT ( -50 TA = 25°C TJ = 25°C limTihtse i nddatiac aotef dF ibgyu trhee 1 a4p ipsl ibcaasbelde ucuprovne .TJ(pk) = 150°C; TC R U or T is variable depending upon conditions. Pulse curves C A OR BC558 are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. T EC -10 BC557 TJ(pk) may be calculated from the data in Figure 13. At high LL BC556 case or ambient temperatures, thermal limitations will O , CC-5.0 BONDING WIRE LIMIT reduce the power that can be handled to values less than the I THERMAL LIMIT limitations imposed by the secondary breakdown. SECOND BREAKDOWN LIMIT -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area www.onsemi.com 5

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series ORDERING INFORMATION Device Device Marking Package Shipping† BC856BDW1T1G 3B SOT−363 3,000 / Tape & Reel (Pb−Free) SBC856BDW1T1G 3B SOT−363 3,000 / Tape & Reel (Pb−Free) BC856BDW1T3G 3B SOT−363 10,000 / Tape & Reel (Pb−Free) SBC856BDW1T3G 3B SOT−363 10,000 / Tape & Reel (Pb−Free) BC857BDW1T1G 3F SOT−363 3,000 / Tape & Reel (Pb−Free) SBC857BDW1T1G 3F SOT−363 3,000 / Tape & Reel (Pb−Free) BC857CDW1T1G 3G SOT−363 3,000 / Tape & Reel (Pb−Free) SBC857CDW1T1G 3G SOT−363 3,000 / Tape & Reel (Pb−Free) BC858CDW1T1G 3L SOT−363 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H N1O.TDEISM:ENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, D PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU- GAGE PLANE SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF 6 5 4 THE PLASTIC BODY AND DATUM H. L2 L 5. DATUMS A AND B ARE DETERMINED AT DATUM H. E E1 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE DETAIL A LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. 1 2 3 ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN aaa C EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI- 2X TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER bbb H D 2X 3 TIPS RADIUS OF THE FOOT. e MILLIMETERS INCHES B 6X b DIM MIN NOM MAX MIN NOM MAX A −−− −−− 1.10 −−− −−− 0.043 TOP VIEW ddd M C A-B D AA12 00..0700 0−.−9−0 01..1000 00..000207 0.−0−35− 00..000349 b 0.15 0.20 0.25 0.006 0.008 0.010 C 0.08 0.15 0.22 0.003 0.006 0.009 A2 DETAIL A D 1.80 2.00 2.20 0.070 0.078 0.086 A E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65 BSC 0.026 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 L2 0.15 BSC 0.006 BSC aaa 0.15 0.006 bbb 0.30 0.012 6X ccc C ccc 0.10 0.004 A1 ddd 0.10 0.004 C SEATING c PLANE SIDE VIEW END VIEW STYLE 1: PIN 1.EMITTER 2 RECOMMENDED 2.BASE 2 SOLDERING FOOTPRINT* 3.COLLECTOR 1 4.EMITTER 1 5.BASE 1 06X.30 06X.66 6.COLLECTOR 2 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: BC856BDW1T1G BC856BDW1T3G BC857BDW1T1G BC857CDW1T1G SBC856BDW1T1G SBC857CDW1T1G SBC856BDW1T3G