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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC856T; BC857T series PNP general purpose transistors Product data sheet 2000 Nov 15 Supersedes data of 1999 Apr 26

NXP Semiconductors Product data sheet BC856T; BC857T PNP general purpose transistors series FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 65 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification, especially in portable equipment. DESCRIPTION PNP transistor in an SC-75 (SOT416) plastic package. handbook, halfpage 3 3 NPN complements: BC846T; BC847T series. 1 MARKING 1 2 2 TYPE NUMBER MARKING CODE Top view MAM362 BC856AT 3A BC856BT 3B BC857AT 3E Fig.1 Simplified outline (SC-75; SOT416) and BC857BT 3F symbol. BC857CT 3G LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC856AT; BC856BT − −80 V BC857AT; BC857BT; BC857CT − −50 V V collector-emitter voltage open base CEO BC856AT; BC856BT − −65 V BC857AT; BC857BT; BC857CT − −45 V V emitter-base voltage open collector − −5 V EBO I collector current (DC) − −100 mA C I peak collector current − −200 mA CM I peak base current − −100 mA BM P total power dissipation T ≤ 25 °C; note 1 − 150 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 2000 Nov 15 2

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient in free air; note 1 833 K/W th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector-base cut-off current V = −30 V; I = 0 − − −15 nA CBO CB E V = −30 V; I = 0; T = 150 °C − − −5 μA CB E j I emitter cut-off current V = −5 V; I = 0 − − −100 nA EBO EB C h DC current gain V = −5 V; I = −2 mA FE CE C BC856AT; BC857AT 125 − 250 BC856BT; BC857BT 220 − 475 BC857CT 420 − 800 V collector-emitter saturation I = −10 mA; I = −0.5 mA − − −200 mV CEsat C B voltage I = −100 mA; I = −5 mA; note 1 − − −400 mV C B V base-emitter voltage I = −2 mA; V = −5 V −580 − −700 mV BE C CE I = −10 mA; V = −5 V − − −770 mV C CE C collector capacitance V = −10 V; f = 1 MHz; I = i = 0 − − 2.5 pF c CB E e C emitter capacitance V = −0.5 V; f = 1 MHz; I = i = 0 − 10 − pF e EB C c f transition frequency I = −10 mA; V = −5 V; 100 − − MHz T C CE f = 100 MHz F noise figure I = −200 μA; V = −5 V; − − 10 dB C CE R = 2 kΩ; f = 1 kHz; B = 200 Hz S Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 2000 Nov 15 3

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857AT 500 MGT711 −1200 MGT712 handbook, halfpage haVnBdbEook, halfpage hFE (mV) −1000 400 (1) (1) −800 300 (2) −600 200 (2) (3) −400 (3) 100 −200 0 0 −10−2 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V. VCE = −5 V. (1) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.3 Base-emitter voltage as a function of Fig.2 DC current gain; typical values. collector current; typical values. −104 MGT713 −1200 MGT714 handbook, halfpage hVaBndEbsoaotk, halfpage VCEsat (mV) (mV) −1000 (1) −103 −800 (2) (3) −600 −102 −400 (1) (3) (2) −200 −10 0 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) IC/IB = 20. IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.4 Collector-emitter saturation voltage as a Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. function of collector current; typical values. 2000 Nov 15 4

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857BT 1000 MGT715 −1200 MGT716 handbook, halfpage haVnBdbEook, halfpage hFE (mV) −1000 800 (1) −800 600 (2) (1) −600 400 (2) −400 (3) 200 (3) −200 0 0 −10−2 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V. VCE = −5 V. (1) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.7 Base-emitter voltage as a function of Fig.6 DC current gain; typical values. collector current; typical values. −104 MGT717 −1200 MGT718 handbook, halfpage hVaBndEbsoaokt, halfpage VCEsat (mV) (mV) −1000 (1) −103 −800 (2) −600 (3) −102 −400 (1) −200 (3) (2) −10 0 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) IC/IB = 20. IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.8 Collector-emitter saturation voltage as a Fig.9 Base-emitter saturation voltage as a function of collector current; typical values. function of collector current; typical values. 2000 Nov 15 5

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series GRAPHICAL INFORMATION BC857CT 1000 MGT719 −1200 MGT720 handbook, halfpage haVndBbEook, halfpage hFE (mV) (1) −1000 800 −800 (1) 600 (2) (2) −600 400 −400 (3) (3) 200 −200 0 0 −10−2 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V. VCE = −5 V. (1) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.11 Base-emitter voltage as a function of Fig.10 DC current gain; typical values. collector current; typical values. −104 MGT721 −1200 MGT722 handbook, halfpage hVaBndEbsoaokt, halfpage VCEsat (mV) (mV) −1000 (1) −103 −800 (2) −600 (3) −102 −400 (1) −200 (3) (2) −10 0 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) IC/IB = 20. IC/IB = 20. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. function of collector current; typical values. 2000 Nov 15 6

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D B E A X v M A HE 3 Q A 1 2 A1 c e1 bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 0.95 0.30 0.25 1.8 0.9 1.75 0.45 0.23 mm 0.1 1 0.5 0.2 0.2 0.60 0.15 0.10 1.4 0.7 1.45 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT416 SC-75 97-02-28 2000 Nov 15 7

NXP Semiconductors Product data sheet PNP general purpose transistors BC856T; BC857T series DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2000 Nov 15 8

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/03/pp9 Date of release: 2000 Nov 15 Document order number: 9397 750 07525