ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > BC849CW,115
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BC849CW,115产品简介:
ICGOO电子元器件商城为您提供BC849CW,115由NXP Semiconductors设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BC849CW,115价格参考¥0.13-¥0.13。NXP SemiconductorsBC849CW,115封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 30V 100mA 100MHz 200mW 表面贴装 SC-70。您可以下载BC849CW,115参考资料、Datasheet数据手册功能说明书,资料中有BC849CW,115 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANSISTOR NPN 30V 100MA SOT323两极晶体管 - BJT TRANS LOW NOISE |
产品分类 | 晶体管(BJT) - 单路分离式半导体 |
品牌 | NXP Semiconductors |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 晶体管,两极晶体管 - BJT,NXP Semiconductors BC849CW,115- |
数据手册 | |
产品型号 | BC849CW,115 |
PCN封装 | |
PCN设计/规格 | |
不同 Ib、Ic时的 Vce饱和值(最大值) | 600mV @ 5mA,100mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 420 @ 2mA,5V |
产品种类 | Transistors - Arrays |
供应商器件封装 | SOT-323 |
其它名称 | 568-6072-6 |
功率-最大值 | 200mW |
包装 | Digi-Reel® |
发射极-基极电压VEBO | 5 V |
商标 | NXP Semiconductors |
增益带宽产品fT | 100 MHz |
安装类型 | 表面贴装 |
安装风格 | SMD/SMT |
封装 | Reel |
封装/外壳 | SC-70,SOT-323 |
封装/箱体 | SC-70 |
工厂包装数量 | 3000 |
晶体管极性 | NPN |
晶体管类型 | NPN |
最大功率耗散 | 200 mW |
最大工作温度 | + 150 C |
最大直流电集电极电流 | 200 mA |
最小工作温度 | - 65 C |
标准包装 | 1 |
特色产品 | http://www.digikey.com/cn/zh/ph/NXP/I2C.html |
电压-集射极击穿(最大值) | 30V |
电流-集电极(Ic)(最大值) | 100mA |
电流-集电极截止(最大值) | - |
直流电流增益hFE最大值 | 420 at 2 mA at 5 V |
直流集电极/BaseGainhfeMin | 420 |
配置 | Single |
集电极—发射极最大电压VCEO | 30 V |
集电极—基极电压VCBO | 30 V |
集电极连续电流 | 100 mA |
零件号别名 | BC849CW T/R |
频率-跃迁 | 100MHz |
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet 1999 Apr 12 Supersedes data of 1997 Jun 20
NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a SOT323 plastic package. handbook, halfpage 3 PNP complements: BC859W and BC860W. 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 1 2 BC849BW 2B∗ BC850BW 2F∗ Top view MAM062 BC849CW 2C∗ BC850CW 2G∗ Note 1. ∗ = - : Made in Hong Kong. Fig.1 Simplified outline (SOT323) and symbol. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BC849W − 30 V BC850W − 50 V V collector-emitter voltage open base CEO BC849W − 30 V BC850W − 45 V V emitter-base voltage open collector − 5 V EBO I collector current (DC) − 100 mA C I peak collector current − 200 mA CM I peak base current − 200 mA BM P total power dissipation T ≤ 25 °C; note 1 − 200 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j T operating ambient temperature −65 +150 °C amb Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2
NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to ambient note 1 625 K/W th j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = 30 V − − 15 nA CBO E CB I = 0; V = 30 V; T = 150 °C − − 5 μA E CB j I emitter cut-off current I = 0; V = 5 V − − 100 nA EBO C EB h DC current gain I = 2 mA; V = 5 V; see Figs 2 and 3 FE C CE BC849BW; BC850BW 200 − 450 BC849CW; BC850CW 420 − 800 V collector-emitter saturation I = 10 mA; I = 0.5 mA − − 250 mV CEsat C B voltage I = 100 mA; I = 5 mA; note 1 − − 600 mV C B V base-emitter voltage I = 2 mA; V = 5 V 580 − 700 mV BE C CE I = 10 mA; V = 5 V − − 770 mV C CE C collector capacitance I = i = 0; V = 10 V; f = 1 MHz − − 3 pF c E e CB C emitter capacitance I = i = 0; V = 500 mV; f = 1 MHz − 11 − pF e C c EB f transition frequency I = 10 mA; V = 5 V; f = 100 MHz 100 − − MHz T C CE F noise figure I = 200 μA; V = 5 V; R = 2 kΩ; − − 4 dB C CE S f = 10 Hz to 15.7 kHz I = 200 μA; V = 5 V; R = 2 kΩ; − − 4 dB C CE S f = 1 kHz; B = 200 Hz Note 1. Pulse test: t ≤ 300 μs; δ ≤ 0.02. p 1999 Apr 12 3
NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W MBH724 300 handbook, full pagewidth hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 BC849BW; BC850BW. Fig.2 DC current gain; typical values. MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 102 IC (mA) 103 BC849CW; BC850CW. Fig.3 DC current gain; typical values. 1999 Apr 12 4
NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D B E A X y HE v M A 3 Q A A1 c 1 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x bp c D E e e1 HE Lp Q v w 1.1 0.4 0.25 2.2 1.35 2.2 0.45 0.23 mm 0.1 1.3 0.65 0.2 0.2 0.8 0.3 0.10 1.8 1.15 2.0 0.15 0.13 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION SOT323 SC-70 97-02-28 1999 Apr 12 5
NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 12 6
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 12 Document order number: 9397 750 05587